公开(公告)号：US4599792A

公开(公告)日：1986-07-15

申请号：US620982

申请日：1984-06-15

申请人： Paul E. Cade ,  Badih El-Kareh ,  Ick W. Kim

发明人： Paul E. Cade ,  Badih El-Kareh ,  Ick W. Kim

IPC分类号： H01L21/02 ,  H01L21/58 ,  H01L21/74 ,  H01L21/762 ,  H01L21/84 ,  H01L23/58 ,  H01L27/00 ,  H01L27/12 ,  H01L21/20 ,  H01L21/31

CPC分类号： H01L24/83 ,  H01L21/74 ,  H01L21/743 ,  H01L21/76251 ,  H01L21/84 ,  H01L23/585 ,  H01L24/26 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y10S148/025 ,  Y10S148/05 ,  Y10S148/135

摘要： A method for fabrication of a buried field shield in a semiconductor substrate. A seed substrate is prepared by depositing an epitaxial layer or a seed wafer and then depositing a heavily doped layer and a thin dielectric. The thin dielectric is patterned for contact holes and then a conductive field shield is deposited and patterned. A thick quartz layer is deposited over the field shield and dielectric. A mechanical substrate is anodically bonded to the quartz of the seed substrate and the original seed wafer is etched back to expose the epitaxial layer for further fabrication.

摘要翻译： 一种在半导体衬底中制造掩埋场屏蔽的方法。 通过沉积外延层或种子晶片然后沉积重掺杂层和薄电介质来制备晶种基底。 图案化薄电介质用于接触孔，然后沉积并图案化导电场屏蔽。 在场屏蔽和电介质上沉积厚的石英层。 将机械衬底阳极结合到种子衬底的石英上，并将原始种子晶片回蚀刻以露出外延层以进一步制造。

公开(公告)号：US4356730A

公开(公告)日：1982-11-02

申请号：US223522

申请日：1981-01-08

申请人： Paul E. Cade

发明人： Paul E. Cade

IPC分类号： G01P15/08 ,  G01P15/125 ,  G02B6/12 ,  G02B26/08 ,  G02B26/10 ,  G02F1/19 ,  G09F9/37 ,  G11C11/00 ,  G11C11/42 ,  G11C13/04 ,  H01H59/00 ,  H01L21/331 ,  H01L21/822 ,  H01L27/04 ,  H01L29/73

CPC分类号： G09F9/372 ,  G11C11/00 ,  G11C13/04 ,  H01H59/0009

摘要： This describes a dual electrode electrostatically deflectable deformographic switch. The switch can be driven by co-incident voltages and can be made to retain and store information. The switch can be used either as a display or a memory and has a number of engineering advantages, for it is a direct drive display which does not need either vacuum envelopes or electron beam drives. Furthermore, greater efficiencies can be realized and no refresh is necessary since the switch will operate in a standby condition. Also only two voltage levels above ground, i.e., a write voltage and a standby voltage, are required. The switch will enable copiers to be directly driven by computers.The switch can also be used as an optical waveguide transmit/receive switch or an accelerometer.

摘要翻译： 这描述了一种双电极静电可挠曲的变形开关。 开关可以由共同入电电压驱动，可以保留和存储信息。 该开关可用作显示器或存储器，并且具有许多工程优点，因为它是不需要真空包络或电子束驱动的直接驱动显示器。 此外，可以实现更高的效率，并且不需要刷新，因为开关将在待机状态下操作。 同样只需要两个接地电压，即写入电压和待机电压。 该开关将使复印机由计算机直接驱动。 该开关也可以用作光波导发射/接收开关或加速度计。

公开(公告)号：US4724043A

公开(公告)日：1988-02-09

申请号：US943845

申请日：1986-12-24

申请人： Albert S. Bergendahl ,  Paul E. Cade ,  Norman T. Gonnella ,  Francis S. Luecke ,  Kurt E. Petersen

发明人： Albert S. Bergendahl ,  Paul E. Cade ,  Norman T. Gonnella ,  Francis S. Luecke ,  Kurt E. Petersen

IPC分类号： G11B7/26 ,  G11B23/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： G11B23/0057 ,  G11B7/261

摘要： A method for forming a master mold for optical storage disks includes thermally growing an oxide or nitride layer on a semiconductor wafer. The thermally grown layer is then coated with a photoresist. The photoresist is exposed to a laser beam to form a data pattern and developed. The oxide or nitride under the developed pattern is etched and the photoresist stripped to provide a semiconductor master mold for optical disks.

摘要翻译： 用于形成用于光学存储盘的母模的方法包括在半导体晶片上热生长氧化物或氮化物层。 然后用光致抗蚀剂涂覆热生长层。 将光致抗蚀剂暴露于激光束以形成数据图案并显影。 在显影图案下的氧化物或氮化物被蚀刻并且光致抗蚀剂剥离以提供用于光盘的半导体母模。

公开(公告)号：US4534804A

公开(公告)日：1985-08-13

申请号：US620644

申请日：1984-06-14

申请人： Paul E. Cade

发明人： Paul E. Cade

IPC分类号： G03F9/00 ,  H01L21/027 ,  H01L21/268 ,  H01L23/544 ,  H01C7/00 ,  H01L21/265 ,  H01L21/66

CPC分类号： H01L23/544 ,  H01L21/268 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975

摘要： A laser beam is used to scribe an alignment mark on the back side of a lightly doped substrate of a silicon wafer containing an heavily doped internal layer. The wavelength of the laser beam is chosen such that it passes through the lightly doped substrate without absorption but is absorbed in the heavily doped internal layer to produce therein a defect which has the same position as the scribed alignment mark. Subsequent heating of the wafer causes the defect to migrate upwardly through a lightly doped epitaxial layer to the front side of the wafer and produce therein a visible mirror image of the scribed alignment mark.

摘要翻译： 使用激光束在包含重掺杂内层的硅晶片的轻掺杂衬底的背侧上刻划对准标记。 选择激光束的波长使得其通过轻掺杂衬底而没有吸收，但是在重掺杂的内层中被吸收，以在其中产生与所划线对准标记具有相同位置的缺陷。 晶片的随后加热导致缺陷向上迁移穿过轻掺杂外延层到晶片的前侧，并在其中产生划线器对准标记的可见镜像。

公开(公告)号：US4157560A

公开(公告)日：1979-06-05

申请号：US866128

申请日：1977-12-30

申请人： Paul E. Cade

发明人： Paul E. Cade

IPC分类号： G01J1/02 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/103 ,  H01L27/14

CPC分类号： H01L27/1443 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

摘要： A smaller, faster, more efficient photo detector cell can be created with improved photo sensitivity in the short wavelength regions, using well known integrated circuit production techniques, by forming the photo sensitive junction of the device in an isolated region of a thin epitaxial layer overlying a thin subcollector so as to use all the current generated in the cell. The cell thus comprises a semiconductor body having an epitaxial layer thereon which is divided into isolated pockets containing a photosensitive junction overlying a subcollector region formed at a depth of less than 10 microns between the substrate and the epitaxial layer. The photo sensitive junction of the device merges with the isolation region so that a single continuous P-N junction surrounds substantially all subcollectors and the isolated pocket of epitaxial material. A device constructed as taught realizes approximately 100% quantum efficiency over a wide range of incident light.

摘要翻译： 通过使用众所周知的集成电路生产技术，可以通过在薄的外延层的隔离区域中形成光敏接头，从而在短波长区域中提供更小，更快，更有效的光电检测器单元 薄的子集电极，以便使用在电池中产生的所有电流。 电池因此包括其上具有外延层的半导体主体，其被分成包含覆盖在基板和外延层之间的小于10微米的深度形成的子集电极区域的光敏结的隔离袋。 器件的光敏结与隔离区域合并，使得单个连续的P-N结基本上包围所有子集电极和外延材料的隔离袋。 构造成教学的器件在宽范围的入射光下实现大约100％的量子效率。