摘要:
An airflow metering device, including a conventional airflow sensing device signally connected to a signal processor is shown, having an input flow signal correlatable to a magnitude of mass air flowing past the airflow sensing device. The signal processor is operable to determine a flow correction factor based upon a direction and magnitude of the mass air flowing past the airflow sensing device. The output of the airflow metering device is an accurate measure of airflow, and comprises the input flow signal of the airflow sensing device adjusted by the flow correction factor determined by the signal processor.
摘要:
There is described a method for converting oripavine to hydromorphone or a physiologically acceptable salt thereof such as hydromorphone hydrochloride involving generation of 8,14-dihydrooripavine utilising diimine.
摘要:
The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen. The method includes introducing a process gas containing silicon, oxygen, and first dopant atoms into the chamber; using helium as the carrier gas in the system; and processing more substrates between cleanings than a process using nitrogen as carrier gas. A further aspect of the invention includes annealing the dielectric films formed on the substrates at a lower temperature than required by the process using nitrogen as carrier gas.
摘要:
A method for making oil free polysiloxane standard, fine and microemulsions using emulsion polymerization is disclosed. The method comprises reacting a cyclicsiloxane in the presence of a catalyst, ionic surfactant and nonionic surfactant within a certain operating window. Emulsions containing silicone copolymers can also be produced using the method of the instant invention.
摘要:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要:
Emulsions and microemulsions containing particles of siloxane polymers are prepared by an emulsion polymerization process involving (i) the formation of a mixture by combining a siloxane oligomer, an ionic surfactant, no nonionic surfactant, and water; (ii) agitating the mixture without using high shearing forces (homogenization) to form droplets of oligomer prior to polymerization that have an average diameter of greater than 10 micron/10,000 nanometer; (iii) adding a siloxane polymerization catalyst to the oligomer mixture; (iv) agitating the mixture without using high shearing forces; (v) polymerizing the oligomer to form new particles of polymer; and (vi) continuing step (v) until the polymer has increased in viscosity or molecular weight.
摘要:
The instant invention pertains to a method for making amino-functional polysiloxane emulsions wherein said method comprises the emulsion polymerization of a mixture comprising cyclosiloxanes and an aminosilane having an amino-functional group solubility parameter equal to or less than 10.0. Said emulsion polymerization is carried out in the presence of water, at least one cationic surfactant and a basic polymerization catalyst. By using an aminosilane having an amino-functional group solubility parameter of equal to or less than 10.0 it is possible to produce emulsions with higher amine concentrations in the resulting polymer.
摘要:
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要:
By using a nonionic surfactant as the primary emulsifier having an hydrophilic-lipophilic balance (HLB) greater than about 13, at a concentration sufficient to provide about 0.5-3 molecules per 100 square .ANG. of surface area of silicone particles; and a nonionic cosurfactant having an HLB less than about 11, at a concentration sufficient to provide 5-15 molecules of emulsifier per 100 square .ANG. of surface area of silicone particles; aqueous emulsions containing low molecular weight silicones can be prepared which possess improved particle size stability. In particular, the low molecular weight silicones have a molecular weight less than about 1,000, and a viscosity of not greater than about 5 mm.sup.2 /sec. These emulsions can be used in applications relating to laundry pre-spotting, automotive bug and tar removal, and hard surface cleaning.