摘要:
Cationically polymerizable styryloxy resins having urethane linkages, represented by the formula III ##STR1## wherein R.sup.1 and R.sup.2 are H, or one of R.sup.1 and R.sup.2 is H and the other is methyl;R.sup.3 and R.sup.4 (which may be the same or different) are H, lower alkyl, or alkoxy if R.sup.2 is not methyl;R.sup.5 is a divalent hydrocarbon radical;G.sup.1 is an n-valent hydrocarbon radical free of amino, aliphatic thiol, aliphatic hydroxyl or other groups which interfere with cationic polymerization;and n is an integer of 2 or more.G.sup.1 is a hydrocarbon backbone which is not interrupted by a hetero atom. Preferably G.sup.1 is a residue of a diene homopolymer or copolymer, in which case the resins produce flexible polymers. The resins are polymerized with a cationic polymerization initiator or latent acid catalyst. The resins have utility in the field of electronics.
摘要:
A photoresist coating for use in microlithography comprises a polymer of a monomer of the formula ##STR1## wherein X and Y are strong electron withdrawing groups and R.sup.4 is H or, providing that X and Y are both --CN, R.sup.4 may be aliphatic hydrocarbyl, aryl or alkaryl. Preferred monomers are of the formula ##STR2## wherein R.sup.7 is a C.sub.1 -C.sub.5 alkyl or C.sub.2 -C.sub.5 alkenyl group, more particularly ethyl 2-cyanopenta-2,4-dienoate or allyl 2-cyanopenta-2,4-dienoate.Methods for applying a resist coating by vapor deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed.
摘要:
Anionically polymerizable monomers containing at least one silicon or titanium atom form polymeric photoresists having good dry etch resistance for use in microlithography. The monomers are of the formula ##STR1## wherein A is --H or --CH.dbd.CH.sub.2 ; X is a strong electron withdrawing group;Y is a strong electron withdrawing group containing at least one silicon or titanium atom.Preferably Y is ##STR2## wherein n is 1-5 and R.sup.2, R.sup.3 and R.sup.4 are C.sub.1 -C.sub.10 alkyl. A particularly preferred monomer is 3-trimethylsilylpropyl 2-cyanoacrylate.Methods for applying a resist coating by vapor deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed. The imaging layer may be applied over a planarizing layer to form a multilayer photoresist.
摘要:
The silicon-containing phenoxy ethers are of the formula III: ##STR1## wherein R.sup.1 and R.sup.2 which may be the same or different are selected from H, --R.sup.3 --X, aliphatic hydrocarbyl having 1-6 carbon atoms or aryl, or substituted derivatives thereof, provided that not more than one of R.sup.1 and R.sup.2 is H;R.sup.3 is a divalent C.sub.1 -C.sub.30 aliphatic and/or aromatic hydrocarbyl group which may optionally be substituted, or interrupted, by a hetero atom;R.sup.4 and R.sup.5 which may be the same or different are H, ##STR2## or an ortho para directing activating group for aromatic electrophilic substitution, other than an amine;and X is a reactive functional group capable of undergoing an acid-catalyzed electrophilic aromatic substitution reaction with a phenol, for example an aldehyde group. They can be polymerized to produce silicone-modified polymers of the phenol-aldehyde type without the use of free aldehyde. One-part compositions containing a compound of the formula III and a latent acid catalyst (e.g. for photoinitiation or thermal initiation of polymerization) are described. The compositions are intended for use as coatings, sealants, adhesives, potting compositions or photoresists.Exemplified compounds are of the formula VII: ##STR3##