公开(公告)号：US07151028B1

公开(公告)日：2006-12-19

申请号：US10981174

申请日：2004-11-04

申请人： Shenqing Fang ,  Rinji Sugino ,  Kuo-Tung Chang ,  Zhigang Wang ,  Kazuhiro Mizutani ,  Pavel Fastenko

发明人： Shenqing Fang ,  Rinji Sugino ,  Kuo-Tung Chang ,  Zhigang Wang ,  Kazuhiro Mizutani ,  Pavel Fastenko

IPC分类号： H01L21/26

CPC分类号： H01L29/66636 ,  H01L29/1037 ,  H01L29/66659 ,  H01L29/66825 ,  H01L29/7881

摘要： According to one exemplary embodiment, a method for fabricating a floating gate memory cell on a substrate comprises a step of forming a first spacer adjacent to a source sidewall of a stacked gate structure, where the stacked gate structure is situated over a channel region in the substrate. The method further comprises forming a high energy implant doped region adjacent to the first spacer in a source region of the substrate. The method further comprises forming a recess in the source region, where a sidewall of the recess is situated adjacent to a source of the floating gate memory cell, and where forming the recess comprises removing the first spacer. The method further comprises forming a second spacer adjacent to the source sidewall of the stacked gate structure, where the second spacer extends to a bottom of the recess, and where the second spacer comprises plasma-grown oxide.

摘要翻译： 根据一个示例性实施例，用于在衬底上制造浮动栅极存储器单元的方法包括形成邻近层叠栅极结构的源极侧壁的第一间隔物的步骤，其中堆叠的栅极结构位于 基质。 该方法还包括在衬底的源区中形成与第一间隔物相邻的高能注入掺杂区。 该方法还包括在源极区域中形成凹部，其中凹部的侧壁位于与浮动栅极存储单元的源极相邻处，并且其中形成凹槽包括移除第一间隔物。 该方法还包括形成邻近层叠栅极结构的源极侧壁的第二间隔物，其中第二间隔物延伸到凹部的底部，并且其中第二间隔物包括等离子体生长的氧化物。

公开(公告)号：US07851306B2

公开(公告)日：2010-12-14

申请号：US12327641

申请日：2008-12-03

申请人： Shenqing Fang ,  Hiroyuki Ogawa ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Kazuhiro Mizutani ,  Zhigang Wang

发明人： Shenqing Fang ,  Hiroyuki Ogawa ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Kazuhiro Mizutani ,  Zhigang Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/7883 ,  H01L21/2652 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66825

摘要： Embodiments of the present invention disclose a memory device having an array of flash memory cells with source contacts that facilitate straight word lines, and a method for producing the same. The array is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions that isolate a plurality of memory cell columns. A source column is implanted with n-type dopants after the formation of a tunnel oxide layer and a first polysilicon layer. The implanted source column is coupled to a plurality of common source lines that are coupled to a plurality of source regions associated with memory cells in the array. A source contact is coupled to the implanted source column for providing electrical coupling with the plurality of source regions. The source contact is collinear with a row of drain contacts that are coupled to drain regions associated with a row of memory cells. The arrangement of source contacts collinear with the row of drain contacts allows for straight word line formation.

摘要翻译： 本发明的实施例公开了一种存储器件，其具有具有促进直线字线的源极触点的闪存单元阵列及其制造方法。 阵列由隔离多个存储单元列的多个不相交的浅沟槽隔离（STI）区域组成。 在形成隧道氧化物层和第一多晶硅层之后，源极列注入n型掺杂剂。 植入的源极柱耦合到耦合到与阵列中的存储器单元相关联的多个源极区域的多个公共源极线。 源极触点耦合到植入源极柱，用于提供与多个源极区域的电耦合。 源触点与一排漏极触点共线，该排触点耦合到与一行存储器单元相关联的漏极区。 与漏极触点排共线的源触点的布置允许直线字线形成。

公开(公告)号：US20090090953A1

公开(公告)日：2009-04-09

申请号：US12327641

申请日：2008-12-03

申请人： Shenqing FANG ,  Hiroyuki OGAWA ,  Kuo-Tung CHANG ,  Pavel FASTENKO ,  Kazuhiro MIZUTANI ,  Zhigang WANG

发明人： Shenqing FANG ,  Hiroyuki OGAWA ,  Kuo-Tung CHANG ,  Pavel FASTENKO ,  Kazuhiro MIZUTANI ,  Zhigang WANG

IPC分类号： H01L29/788

CPC分类号： H01L29/7883 ,  H01L21/2652 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66825

摘要： Embodiments of the present invention disclose a memory device having an array of flash memory cells with source contacts that facilitate straight word lines, and a method for producing the same. The array is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions that isolate a plurality of memory cell columns. A source column is implanted with n-type dopants after the formation of a tunnel oxide layer and a first polysilicon layer. The implanted source column is coupled to a plurality of common source lines that are coupled to a plurality of source regions associated with memory cells in the array. A source contact is coupled to the implanted source column for providing electrical coupling with the plurality of source regions. The source contact is collinear with a row of drain contacts that are coupled to drain regions associated with a row of memory cells. The arrangement of source contacts collinear with the row of drain contacts allows for straight word line formation.

摘要翻译： 本发明的实施例公开了一种存储器件，其具有具有促进直线字线的源极触点的闪存单元阵列及其制造方法。 阵列由隔离多个存储单元列的多个不相交的浅沟槽隔离（STI）区域组成。 在形成隧道氧化物层和第一多晶硅层之后，源极列注入n型掺杂剂。 植入的源极柱耦合到耦合到与阵列中的存储器单元相关联的多个源极区域的多个公共源极线。 源极触点耦合到植入源极柱，用于提供与多个源极区域的电耦合。 源触点与一排漏极触点共线，该排触点耦合到与一行存储器单元相关联的漏极区。 与漏极触点排共线的源触点的布置允许直线字线形成。

公开(公告)号：US07029975B1

公开(公告)日：2006-04-18

申请号：US10839561

申请日：2004-05-04

申请人： Shenqing Fang ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Kazuhiro Mizutani

发明人： Shenqing Fang ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Kazuhiro Mizutani

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/513

摘要： A method and apparatus for coupling to a source line is disclosed. A semiconductor structure having an array of memory cells arranged in rows and columns is described. The array of memory cells includes a source region that is implanted with n-type dopants isolated between an adjoining pair of the non-intersecting STI regions and isolated from a drain region during the implantation. A source contact is located along a row of drain contacts that are coupled to drain regions of a row of memory cells and the source contact is coupled to the source region for providing electrical coupling with a plurality of source lines. The isolating of the implanted source region from the drain region during the implanting enables coupling of the source contact to the source lines while maintaining the n-type dopants between the STI regions and avoiding lateral diffusion to a bit-line.

摘要翻译： 公开了一种用于耦合到源极线的方法和装置。 描述了具有排列成行和列的存储单元阵列的半导体结构。 存储单元阵列包括源区域，其注入在相邻的一对不相交的STI区域之间隔离并在植入期间与漏区隔离的n型掺杂剂。 源极触点沿着一排漏极触点排列，其被连接到一行存储器单元的漏极区域，并且源极触点耦合到源极区域以提供与多个源极线的电耦合。 在植入期间将注入的源极区域与漏极区域隔离使得能够将源极接触耦合到源极线，同时保持STI区域之间的n型掺杂剂并且避免横向扩散到位线。

公开(公告)号：US20060035431A1

公开(公告)日：2006-02-16

申请号：US10915771

申请日：2004-08-11

申请人： Shenqing Fang ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Zhigang Wang

发明人： Shenqing Fang ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Zhigang Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/66825

摘要： According to one exemplary embodiment, a method for fabricating a floating gate memory cell on substrate comprises a step of forming a spacer adjacent to a source sidewall of a stacked gate structure, where the stacked gate structure is situated over a channel region in substrate. The method further comprises forming a high energy implant doped region adjacent to the spacer in the source region of substrate. The method further comprises forming a recess in a source region of the substrate, where the recess has a sidewall, a bottom, and a depth, and where the sidewall of the recess is situated adjacent to a source of the floating gate memory cell. According to this exemplary embodiment, the spacer causes the source to have a reduced lateral straggle and diffusion in the channel region, which causes a reduction in drain induced barrier lowering (DIBL) in the floating gate memory cell.

摘要翻译： 根据一个示例性实施例，用于在衬底上制造浮动栅极存储器单元的方法包括形成与层叠栅极结构的源极侧壁相邻的间隔物的步骤，其中堆叠的栅极结构位于衬底中的沟道区域之上。 该方法还包括在衬底的源区中形成与间隔物相邻的高能注入掺杂区。 该方法还包括在衬底的源极区域中形成凹部，其中凹部具有侧壁，底部和深度，并且凹部的侧壁位于与浮动栅极存储单元的源极相邻的位置。 根据该示例性实施例，间隔件导致源极在通道区域中具有减小的横向偏移和扩散，这导致浮动栅极存储单元中的漏极感应势垒降低（DIBL）的减小。

公开(公告)号：US08896048B1

公开(公告)日：2014-11-25

申请号：US10861581

申请日：2004-06-04

申请人： Richard Fastow ,  Zhigang Wang ,  Yue-Song He ,  Kazuhiro Mizutani ,  Pavel Fastenko

发明人： Richard Fastow ,  Zhigang Wang ,  Yue-Song He ,  Kazuhiro Mizutani ,  Pavel Fastenko

IPC分类号： H01L29/76

CPC分类号： H01L29/66659 ,  H01L29/66825 ,  H01L29/7881

摘要： The present invention provides an apparatus and method for a metal oxide semiconductor field effect transistor (MOSFET) fabricated to reduce short channel effects. The MOSFET includes a semiconductor substrate, a gate stack formed above the semiconductor substrate, a drain side sidewall spacer formed on a drain side of the gate stack, a source side sidewall spacer formed on a source side of the gate stack, and source and drain regions. The source region is formed in the semiconductor substrate on the source side, and is aligned by the source side sidewall spacer to extend an effective channel length between the source region and drain region. The drain region is formed on the drain side in the semiconductor substrate, and is aligned by drain side sidewall spacer to further extend the effective channel length.

摘要翻译： 本发明提供一种制造用于减少短沟道效应的金属氧化物半导体场效应晶体管（MOSFET）的装置和方法。 MOSFET包括半导体衬底，形成在半导体衬底上方的栅极堆叠，形成在栅极堆叠的漏极侧的漏极侧壁间隔物，形成在栅极堆叠的源极侧的源极侧壁隔离物，以及源极和漏极 地区。 源极区域形成在源极侧的半导体衬底中，并且通过源极侧壁间隔物对齐以在源极区域和漏极区域之间延伸有效沟道长度。 漏极区域形成在半导体衬底的漏极侧，并且通过漏极侧壁间隔物排列以进一步延长有效沟道长度。

公开(公告)号：US07488657B2

公开(公告)日：2009-02-10

申请号：US11155707

申请日：2005-06-17

申请人： Shenqing Fang ,  Hiroyuki Ogawa ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Kazuhiro Mizutani ,  Zhigang Wang

发明人： Shenqing Fang ,  Hiroyuki Ogawa ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Kazuhiro Mizutani ,  Zhigang Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/7883 ,  H01L21/2652 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66825

摘要： Embodiments of the present invention disclose a memory device having an array of flash memory cells with source contacts that facilitate straight word lines, and a method for producing the same. The array is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions that isolate a plurality of memory cell columns. A source column is implanted with n-type dopants after the formation of a tunnel oxide layer and a first polysilicon layer. The implanted source column is coupled to a plurality of common source lines that are coupled to a plurality of source regions associated with memory cells in the array. A source contact is coupled to the implanted source column for providing electrical coupling with the plurality of source regions. The source contact is collinear with a row of drain contacts that are coupled to drain regions associated with a row of memory cells. The arrangement of source contacts collinear with the row of drain contacts allows for straight word line formation.

摘要翻译： 本发明的实施例公开了一种存储器件，其具有具有促进直线字线的源极触点的闪存单元阵列及其制造方法。 阵列由隔离多个存储单元列的多个不相交的浅沟槽隔离（STI）区域组成。 在形成隧道氧化物层和第一多晶硅层之后，源极列注入n型掺杂剂。 植入的源极柱耦合到耦合到与阵列中的存储器单元相关联的多个源极区域的多个公共源极线。 源极触点耦合到植入源极柱，用于提供与多个源极区域的电耦合。 源触点与一排漏极触点共线，该排触点耦合到与一行存储器单元相关联的漏极区。 与漏极触点排共线的源触点的布置允许直线字线形成。

公开(公告)号：US07170130B2

公开(公告)日：2007-01-30

申请号：US10915771

申请日：2004-08-11

申请人： Shenqing Fang ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Zhigang Wang

发明人： Shenqing Fang ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Zhigang Wang

IPC分类号： H01L29/788

CPC分类号： H01L29/66825

摘要： According to one exemplary embodiment, a method for fabricating a floating gate memory cell on substrate comprises a step of forming a spacer adjacent to a source sidewall of a stacked gate structure, where the stacked gate structure is situated over a channel region in substrate. The method further comprises forming a high energy implant doped region adjacent to the spacer in the source region of substrate. The method further comprises forming a recess in a source region of the substrate, where the recess has a sidewall, a bottom, and a depth, and where the sidewall of the recess is situated adjacent to a source of the floating gate memory cell. According to this exemplary embodiment, the spacer causes the source to have a reduced lateral straggle and diffusion in the channel region, which causes a reduction in drain induced barrier lowering (DIBL) in the floating gate memory cell.

摘要翻译： 根据一个示例性实施例，用于在衬底上制造浮动栅极存储器单元的方法包括形成与层叠栅极结构的源极侧壁相邻的间隔物的步骤，其中堆叠的栅极结构位于衬底中的沟道区域之上。 该方法还包括在衬底的源区中形成与间隔物相邻的高能注入掺杂区。 该方法还包括在衬底的源极区域中形成凹部，其中凹部具有侧壁，底部和深度，并且凹部的侧壁位于与浮动栅极存储单元的源极相邻的位置。 根据该示例性实施例，间隔件导致源极在通道区域中具有减小的横向偏移和扩散，这导致浮动栅极存储单元中的漏极感应势垒降低（DIBL）的减小。

公开(公告)号：US20060286750A1

公开(公告)日：2006-12-21

申请号：US11155707

申请日：2005-06-17

申请人： Shenqing Fang ,  Hiroyuki Ogawa ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Kazuhiro Mizutani ,  Zhigang Wang

发明人： Shenqing Fang ,  Hiroyuki Ogawa ,  Kuo-Tung Chang ,  Pavel Fastenko ,  Kazuhiro Mizutani ,  Zhigang Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/7883 ,  H01L21/2652 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66825

摘要： Embodiments of the present invention disclose a memory device having an array of flash memory cells with source contacts that facilitate straight word lines, and a method for producing the same. The array is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions that isolate a plurality of memory cell columns. A source column is implanted with n-type dopants after the formation of a tunnel oxide layer and a first polysilicon layer. The implanted source column is coupled to a plurality of common source lines that are coupled to a plurality of source regions associated with memory cells in the array. A source contact is coupled to the implanted source column for providing electrical coupling with the plurality of source regions. The source contact is collinear with a row of drain contacts that are coupled to drain regions associated with a row of memory cells. The arrangement of source contacts collinear with the row of drain contacts allows for straight word line formation.