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    Point contacts for polysilicon emitter solar cell
    4.
    发明授权
    Point contacts for polysilicon emitter solar cell 失效
    多晶硅发射极太阳能电池点接点

    公开(公告)号：US08207443B2

    公开(公告)日：2012-06-26

    申请号：US12360804

    申请日：2009-01-27

    申请人： Peter Borden

    发明人： Peter Borden

    IPC分类号： H01L31/00 ,  H01L31/042

    CPC分类号： H01L31/0747 ,  H01L31/022425 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/061 ,  Y02E10/546 ,  Y02E10/548

    摘要： The present invention relates to electrical contacts in a semiconductor device, and more particularly to methods and apparatuses for providing point contacts in a polysilicon emitter or HIT type solar cell. According to certain aspects, the invention uses a dielectric layer interposed between the substrate and a conductive layer to provide a limited area over which junction current can flow. The benefit is that the metal grid conductors do not need to align to the contacts, and can be applied freely without registration. Another benefit of the invention is that it provides increased efficiency for poly emitter and HIT cells through use of point contacts to increase current density. A further benefit is that patterning can be accomplished using low cost methods such as inclusion masking, screen printing or laser ablation. A still further benefit is that final contacts do not need alignment to the point contacts, eliminating registration required for conventional point contact designs.

    摘要翻译： 本发明涉及半导体器件中的电触点，更具体地说，涉及在多晶硅发射器或HIT型太阳能电池中提供点接触的方法和装置。 根据某些方面，本发明使用插入在基板和导电层之间的电介质层，以提供结流电流可流过的有限区域。 其优点在于，金属栅格导体不需要与触点对准，并且可以自由地应用而不需要注册。 本发明的另一个好处是它通过使用点接触来增加电流密度来提高多晶硅发射极和HIT电池的效率。 另外的好处是可以使用诸如夹杂物掩蔽，丝网印刷或激光烧蚀的低成本方法来实现图案化。 更进一步的好处是，最终接触不需要与点触点对准，消除了常规点接触设计所需的配准。

    Passivation process for solar cell fabrication
    5.
    发明申请
    Passivation process for solar cell fabrication 失效
    太阳能电池制造的钝化过程

    公开(公告)号：US20100311203A1

    公开(公告)日：2010-12-09

    申请号：US12479139

    申请日：2009-06-05

    申请人： Peter Borden ,  Michael P. Stewart ,  Li Xu ,  Hemant P. Mungekar ,  Christopher S. Olsen

    发明人： Peter Borden ,  Michael P. Stewart ,  Li Xu ,  Hemant P. Mungekar ,  Christopher S. Olsen

    IPC分类号： H01L31/0216

    CPC分类号： H01L31/1868 ,  H01L31/022425 ,  H01L31/072 ,  Y02E10/50 ,  Y02P70/521

    摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.

    摘要翻译： 本发明的实施例考虑使用新颖的等离子体氧化工艺形成高效太阳能电池，以在太阳能电池基板的表面上形成钝化膜堆叠。 在一个实施方案中，所述方法包括提供在衬底的背面上具有第一类型的掺杂原子的衬底和在衬底的前表面上的第二类型的掺杂原子，等离子体氧化衬底的背表面以形成 氧化层，并在氧化层上形成氮化硅层。

    Rapid thermal oxide passivated solar cell with improved junction
    6.
    发明授权
    Rapid thermal oxide passivated solar cell with improved junction 有权
    快速热氧化钝化太阳能电池具有改善的结

    公开(公告)号：US07838400B2

    公开(公告)日：2010-11-23

    申请号：US12175357

    申请日：2008-07-17

    申请人： Peter Borden

    发明人： Peter Borden

    IPC分类号： H01L21/26 ,  H01L21/42

    CPC分类号： H01L31/02168 ,  Y02E10/50

    摘要： A method of manufacturing a solar cell is provided. One surface of a semiconductor substrate is doped with a n-type dopant. The substrate is then subjected to a thermal oxidation process to form an oxide layer on one or both surfaces of the substrate. The thermal process also diffuses the dopant into the substrate, smoothing the concentration profile. The smoothed concentration gradient enables the oxide layer to act as a passivating layer. Anti-reflective coatings may be applied over the oxide layers, and a reflective layer may be applied on the surface opposite the doped surface to complete the solar cell.

    摘要翻译： 提供一种制造太阳能电池的方法。 掺杂有n型掺杂剂的半导体衬底的一个表面。 然后对衬底进行热氧化处理以在衬底的一个或两个表面上形成氧化物层。 热处理也将掺杂剂扩散到衬底中，使浓度分布平滑。 平滑的浓度梯度使得氧化物层能够用作钝化层。 可以在氧化物层上施加抗反射涂层，并且可以在与掺杂表面相对的表面上施加反射层以完成太阳能电池。

    Bifacial solar cells with overlaid back grid surface
    8.
    发明申请
    Bifacial solar cells with overlaid back grid surface 失效
    双面太阳能电池具有覆盖的背面网格表面

    公开(公告)号：US20100275983A1

    公开(公告)日：2010-11-04

    申请号：US12456378

    申请日：2009-06-15

    申请人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    发明人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    IPC分类号： H01L31/0352 ,  H01L31/0232

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

    摘要翻译： 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板的前表面上的有源区，例如通过磷扩散步骤形成。 在去除PSG之后，假设磷扩散并隔离前端，电介质层沉积在前表面和后表面上。 形成接触网格，例如通过丝网印刷。 在沉积后表面电介质之前，可以在接触点火期间将金属网格施加到后表面，后表面接触栅格，注册到金属栅格并与之合并。

    PLATING THROUGH TUNNEL DIELECTRICS FOR SOLAR CELL CONTACT FORMATION
    9.
    发明申请
    PLATING THROUGH TUNNEL DIELECTRICS FOR SOLAR CELL CONTACT FORMATION 审中-公开
    通过隧道电介质进行太阳能电池接触形成

    公开(公告)号：US20100186808A1

    公开(公告)日：2010-07-29

    申请号：US12360809

    申请日：2009-01-27

    申请人： PETER BORDEN

    发明人： PETER BORDEN

    IPC分类号： H01L31/0256 ,  H01L31/18

    CPC分类号： H01L31/022425 ,  H01L31/02167 ,  H01L31/068 ,  Y02E10/547

    摘要： In general, the present invention relates to forming electrical contacts in a semiconductor device, including contact regions in solar cells. According to certain aspects, the invention provides methods and apparatuses for forming plated contacts in the presence of a thin tunnel oxide. Preferably, the tunnel oxide dielectric layer is thin enough to sustain a tunnel current. Plating over the tunnel dielectric is then performed. The benefits of the invention include that no annealing is required to form the metal-silicide contact. Moreover, there is no requirement for special metals for n- or p-type contacts. Another advantage is that shallow contacts according to the invention avoid punching through a shallow junction, thereby enabling the use of shallower emitters with improved blue response. Still further, there is no need to control the amount of silicide metal plated in order to prevent driving the silicide alloy through the junction.

    摘要翻译： 通常，本发明涉及在包括太阳能电池中的接触区域的半导体器件中形成电触头。 根据某些方面，本发明提供了在薄隧道氧化物存在下形成电镀触点的方法和装置。 优选地，隧道氧化物介电层足够薄以维持隧道电流。 然后在隧道电介质上电镀。 本发明的优点包括不需要退火以形成金属硅化物接触。 此外，不需要用于正型或p型接触的特殊金属。 另一个优点是，根据本发明的浅触点避免穿过浅结，从而能够使用具有改善的蓝色响应的较浅的发射器。 此外，为了防止通过接合部驱动硅化物合金，不需要控制镀覆硅化金属的量。

    PERCOLATING AMORPHOUS SILICON SOLAR CELL
    10.
    发明申请
    PERCOLATING AMORPHOUS SILICON SOLAR CELL 审中-公开
    佩戴非晶硅太阳能电池

    公开(公告)号：US20090107549A1

    公开(公告)日：2009-04-30

    申请号：US11923406

    申请日：2007-10-24

    申请人： PETER BORDEN

    发明人： PETER BORDEN

    IPC分类号： H01L31/00 ,  B05D5/12

    CPC分类号： H01L31/03685 ,  H01L31/0284 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： The present invention generally comprises a solar cell and a solar cell fabrication process. Photogenerated electrons and electron-holes may have a short lifetime or low mobility that permits the electrons or electron-holes to recombine before reaching the junction. A percolating solar cell device may shorten the distance that the electrons and electron-holes need to travel to reach the junction. The percolating solar cell may be formed by depositing a silicon containing layer with poragens and then decomposing the poragens to create openings such as pores in the silicon containing layer. In one embodiment, the silicon containing layer is deposited and then etched anodically to create openings in the silicon containing layer. The layer deposited over the silicon containing layer may extend into the openings. By extending into the openings, the distance to the junction for electrons and electron-holes may be reduced and more electrons and electron-holes may reach the junction.

    摘要翻译： 本发明通常包括太阳能电池和太阳能电池制造工艺。 光生电子和电子空穴可能具有短的寿命或低迁移率，其允许电子或电子空穴在到达结点之前复合。 渗透的太阳能电池装置可以缩短电子和电子空穴需要行进到达结的距离。 渗滤太阳能电池可以通过将含硅层沉积在孔中而形成，然后分解孔以产生诸如含硅层中的孔的开口。 在一个实施例中，沉积含硅层，然后阳极蚀刻以在含硅层中产生开口。 沉积在含硅层上的层可以延伸到开口中。 通过延伸到开口中，可以减少到电子和电子空穴的结的距离，并且更多的电子和电子空穴可以到达结。