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    Electrolytic method for the etch back of encapsulated copper-Invar-copper core structures
    4.
    发明授权
    Electrolytic method for the etch back of encapsulated copper-Invar-copper core structures 失效
    封装的铜 - 堇青铜核心结构的回蚀电解方法

    公开(公告)号：US5098533A

    公开(公告)日：1992-03-24

    申请号：US651073

    申请日：1991-02-06

    申请人： Peter J. Duke ,  Krystyna W. Semkow

    发明人： Peter J. Duke ,  Krystyna W. Semkow

    IPC分类号： C25F3/02 ,  H01L21/48 ,  H05K3/06 ,  H05K3/07 ,  H05K3/44

    CPC分类号： H05K3/44 ,  H01L21/4803 ,  H01L21/486 ,  H05K2201/0338 ,  H05K2201/068 ,  H05K2203/0285 ,  H05K2203/0323 ,  H05K2203/1184 ,  H05K3/062 ,  H05K3/07 ,  H05K3/445

    摘要： Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper-Invar-copper core encapsulated between a pair of dielectric films. The method includes exposing a copper-Invar-copper surface of the copper-Invar-copper core, for example, exposing an edge of the copper-Invar-copper core or drilling a whole through the layer to expose internal copper-Invar-copper. The copper-Invar-copper is then shaped, that is, back etched. This is an electrolytic process where the package is immersed in a substantially pH neutral electrolyte including a counter- electrode. A preferred electrolyte is an aqueous alkali metal nitrate solution. The electrolyte wets the exposed surface of said copper-Invar-copper core. The exposed surface of the copper-Invar-copper core is rendered anodic with respect to the counter-electrode and an electrical potential is applied therebetween. This results in electrochemically etching and shaping the copper-Invar-copper surface.

    摘要翻译： 公开了一种制造微电子封装的方法，该微电子封装具有封装在一对电介质膜之间的由铜 - 英巴铜芯形成的至少一层。 该方法包括将铜 - Inv铜 - 铜芯的铜 - Inv铜 - 铜表面暴露出来，例如，暴露出铜 - Inv铜 - 铜芯的边缘，或者穿过该层进行整体钻孔以暴露内部铜 - Inv铜。 然后将铜 - 殷铜铜成形，即后蚀刻。 这是一种电解方法，其中将封装浸入包括反电极的基本上pH中性的电解质中。 优选的电解质是碱金属硝酸盐水溶液。 电解液润湿所述铜 - Inv铜 - 铜芯的暴露表面。 铜 - 铱铜芯的暴露表面相对于反电极呈阳极，并且在其间施加电位。 这导致电化学蚀刻和成形铜 - 阴极铜表面。

    Single level masking process with two positive photoresist layers
    5.
    发明授权
    Single level masking process with two positive photoresist layers 失效
    具有两个正光致抗蚀剂层的单层掩模工艺

    公开(公告)号：US4088490A

    公开(公告)日：1978-05-09

    申请号：US695484

    申请日：1976-06-14

    申请人： Peter J. Duke ,  Jerry Leff ,  Leo C. Liclican ,  Mark V. Powell

    发明人： Peter J. Duke ,  Jerry Leff ,  Leo C. Liclican ,  Mark V. Powell

    IPC分类号： G11C11/14 ,  G03F7/00 ,  H01F10/18 ,  H01F10/193 ,  H01F41/14 ,  H01F41/34 ,  H01L21/027 ,  H01L21/28 ,  H05K3/10 ,  H05K3/24 ,  G03C5/00

    CPC分类号： H05K3/243 ,  G03F7/0035 ,  H01F41/34 ,  H01L21/0271 ,  H01L21/28 ,  H05K2203/0574 ,  H05K3/108

    摘要： This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.

    摘要翻译： 该单级屏蔽工艺包括使用两层正性光致抗蚀剂。 在第一层光致抗蚀剂中形成图案。 该光致抗蚀剂图案被加热并聚合到一定程度，当其被同一正性光致抗蚀剂的第二层覆盖时，即可以抵抗侵蚀，即第一光致抗蚀剂图案将保持其完整性。 在热处理之后，第一层图案对光化辐射基本上不敏感，并且容易用常规溶剂剥离。 在与第一层中形成的图案不同的第二层光致抗蚀剂中形成图案。 在第一金属沉积在以第二层图案曝光的基板的部分上之后，第二层图案被去除。 第二金属沉积在以第一层图案曝光的基板的部分上，然后去除图案。