公开(公告)号：US09711633B2

公开(公告)日：2017-07-18

申请号：US12118243

申请日：2008-05-09

Applicant: Scott T. Sheppard ,  R. Peter Smith ,  Yifeng Wu ,  Sten Heikman ,  Matthew Jacob-Mitos

Inventor： Scott T. Sheppard ,  R. Peter Smith ,  Yifeng Wu ,  Sten Heikman ,  Matthew Jacob-Mitos

IPC: H01L21/338 ,  H01L29/778 ,  H01L29/08 ,  H01L29/66 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/66462 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming a semiconductor device include forming a dielectric layer on a Group III-nitride semiconductor layer, selectively removing portions of the dielectric layer over spaced apart source and drain regions of the semiconductor layer, implanting ions having a first conductivity type directly into the source and drain regions of the semiconductor layer, annealing the semiconductor layer and the dielectric layer to activate the implanted ions, and forming metal contacts on the source and drain regions of the semiconductor layer.

公开(公告)号：USD774905S1

公开(公告)日：2016-12-27

申请号：US29512422

申请日：2014-12-18

Applicant: Peter Smith

Designer： Peter Smith

公开(公告)号：US08946777B2

公开(公告)日：2015-02-03

申请号：US12564473

申请日：2009-09-22

Applicant: Adam William Saxler ,  Scott Sheppard ,  Richard Peter Smith

Inventor： Adam William Saxler ,  Scott Sheppard ,  Richard Peter Smith

IPC: H01L31/0328 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

Abstract: High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.

Abstract translation: 提供了高电子迁移率晶体管和/或制造高电子迁移率晶体管的方法，其包括具有垂直生长区域，横向生长区域和聚结区域的第一III族氮化物层。 III族氮化物沟道层设置在第一III族氮化物层上，III族氮化物阻挡层设置在III族氮化物沟道层上。 漏极接触，源极接触和栅极接触设置在阻挡层上。 栅极触点设置在第一III族氮化物层的横向生长区域上的阻挡层的一部分上，并且源极接触和/或漏极接触中的一个的至少一部分设置在屏障的一部分上 在第一III族氮化物层的垂直生长区上。

公开(公告)号：US08803198B2

公开(公告)日：2014-08-12

申请号：US13483607

申请日：2012-05-30

Applicant: Richard Peter Smith ,  Scott T. Sheppard ,  Adam William Saxler ,  Yifeng Wu

Inventor： Richard Peter Smith ,  Scott T. Sheppard ,  Adam William Saxler ,  Yifeng Wu

IPC: H01L29/739 ,  H01L31/072

CPC classification number: H01L27/0605 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/42316 ,  H01L29/7787

Abstract: Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours.

Abstract translation: 提供基于III族氮化物的场效应晶体管（FET），其在约28至约70伏特的漏极 - 源极电压（VDS）下操作时具有小于约3.0dB的功率劣化，栅极至源极电压 （Vgs）为约-3.3至约-14伏，正常工作温度为至少约10小时。

公开(公告)号：US08406894B2

公开(公告)日：2013-03-26

申请号：US13246820

申请日：2011-09-27

Applicant: Jessi Ernest Johnson ,  Mark E. Deem ,  Daniel Francis ,  Steven Kim ,  Alexey Salamini ,  Ted Su ,  Peter Smith ,  Daniel Hallock ,  Yoav Ben-Haim ,  Shailendhar Saraf

Inventor： Jessi Ernest Johnson ,  Mark E. Deem ,  Daniel Francis ,  Steven Kim ,  Alexey Salamini ,  Ted Su ,  Peter Smith ,  Daniel Hallock ,  Yoav Ben-Haim ,  Shailendhar Saraf

IPC: A61B18/20

CPC classification number: A61N5/022 ,  A61N5/04

Abstract: The present invention is directed to systems, apparatus, methods and procedures for the noninvasive treatment of tissue using microwave energy. In one embodiment of the invention a medical device and associated apparatus and procedures are used to treat dermatological conditions using microwave energy.

Abstract translation: 本发明涉及使用微波能量对组织进行非侵入性处理的系统，装置，方法和程序。 在本发明的一个实施例中，医疗装置和相关联的装置和程序用于使用微波能量治疗皮肤病学条件。

公开(公告)号：US08405604B2

公开(公告)日：2013-03-26

申请号：US11980716

申请日：2007-10-31

Applicant: Timothy R. Pryor ,  Peter Smith

Inventor： Timothy R. Pryor ,  Peter Smith

IPC: G09G5/00

CPC classification number: A63F13/00 ,  A63F13/02 ,  A63F13/04 ,  A63F13/06 ,  A63F13/10 ,  A63F13/213 ,  A63F13/245 ,  A63F2300/1043 ,  A63F2300/1062 ,  A63F2300/1075 ,  A63F2300/1081 ,  A63F2300/1087 ,  A63F2300/1093 ,  A63F2300/6045 ,  A63F2300/69 ,  G01S5/16 ,  G06F3/011 ,  G06F3/017 ,  G06F3/0304 ,  G06F3/0325 ,  G06F3/0346 ,  G06F3/038 ,  G06F3/042 ,  G06F3/0425 ,  G06F3/0428 ,  G06F19/00 ,  G06F19/3418 ,  G06T7/73 ,  G06T19/20 ,  G06T2219/2016 ,  G06T2219/2021 ,  G10H1/0008 ,  G10H2220/321 ,  G16H40/63 ,  G16H50/50

Abstract: This application discloses active movement based and other video games which may be played over the internet as well in the home or elsewhere. One or two or more persons can play, generally using one or more cameras to determine the relation of an object or a part of a person to a video display on which game related graphics are displayed. Determination of object position and orientation in up to 6 degrees of freedom is disclosed, at data rates sufficient to make game play rewarding.

Abstract translation: 该应用程序公开了基于主动运动和其他视频游戏，其可以通过因特网以及家庭或其它地方播放。 一个或两个以上的人可以玩，通常使用一个或多个相机来确定对象或一部分人物与显示有游戏相关图形的视频显示器的关系。 公开了以达到6自由度的对象位置和方位的确定，其数据速率足以使玩游戏有价值。

公开(公告)号：US20130072977A1

公开(公告)日：2013-03-21

申请号：US13640791

申请日：2011-05-31

Applicant: Marcel Van Engen ,  Peter Smith

Inventor： Marcel Van Engen ,  Peter Smith

IPC: A61J17/00

CPC classification number: A61J17/001 ,  A61J17/02 ,  A61J2200/44

Abstract: A teething device comprising a shield connected to a gum soothing portion formed from a frame is disclosed. The frame is configured to locate underneath a lip and against a gum of an infant when in use. Furthermore, the frame is shaped so as to conform to an infant's gumso as to produce a massaging effect on said gum.

Abstract translation: 公开了一种出牙装置，其包括连接到由框架形成的口香糖部分的护罩。 框架被配置为在使用时定位在唇部和婴儿口香糖下面。 此外，框架被成形为符合婴儿的口香糖，以便对所述口香糖产生按摩效果。

公开(公告)号：USD674101S1

公开(公告)日：2013-01-08

申请号：US29409160

申请日：2011-12-21

Applicant: Peter Smith

Designer： Peter Smith

公开(公告)号：US08287337B2

公开(公告)日：2012-10-16

申请号：US11649513

申请日：2007-01-04

Applicant: Peter Smith ,  Daniel J. Rhyner ,  Carl E. Steele

Inventor： Peter Smith ,  Daniel J. Rhyner ,  Carl E. Steele

IPC: F24F9/00

CPC classification number: A61N7/02 ,  A61B2017/00084 ,  A61B2017/00128 ,  A61B2017/00734 ,  A61B2017/00774 ,  A61M37/0092

Abstract: A conditioned vestibule, control system, and method are disclosed for use with a cold storage doorway that separates warm and cold sides. A heater warms an air stream discharged across the doorway by the vestibule. A control unit operates the heater to maintain an air stream temperature. The control unit continuously monitors the air stream temperature and operates the heater to maintain the air stream temperature in a non-saturated state based on a humidity ratio. One embodiment calculates first and second temperatures based, respectively, warm and cold side tangent lines to a psychrometric saturation curve and based on the humidity ratio. The tangent lines are based on humidity and temperature sensed on the warm and cold sides. The air stream is warmed to at least the greater of the first and second temperatures. One embodiment controls air flow to adjust the humidity ratio to more efficiently operate the vestibule.

Abstract translation: 公开了一种调节前庭，控制系统和方法，用于分开冷和冷侧的冷藏入口。 加热器通过前庭加热通过门口排出的气流。 控制单元操作加热器以维持气流温度。 控制单元连续地监视气流温度并操作加热器，以基于湿度比将气流温度保持在非饱和状态。 一个实施例分别计算基于湿度比的基于温湿度饱和曲线的暖和冷侧切线的第一和第二温度。 切线基于在温暖和冷的两侧感测到的湿度和温度。 空气流被加热到至少第一和第二温度中的较大值。 一个实施例控制空气流量以调节湿度比以更有效地操作前庭。

公开(公告)号：US20120235159A1

公开(公告)日：2012-09-20

申请号：US13483607

申请日：2012-05-30

Applicant: Richard Peter Smith ,  Scott T. Sheppard ,  Adam William Saxler ,  Yifeng Wu

Inventor： Richard Peter Smith ,  Scott T. Sheppard ,  Adam William Saxler ,  Yifeng Wu

IPC: H01L29/778

CPC classification number: H01L27/0605 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/42316 ,  H01L29/7787

Abstract: Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours.

Abstract translation: 提供基于III族氮化物的场效应晶体管（FET），其在约28至约70伏特的漏极 - 源极电压（VDS）下操作时具有小于约3.0dB的功率劣化，栅极至源极电压 （Vgs）为约-3.3至约-14伏，正常工作温度为至少约10小时。