公开(公告)号：US08227825B2

公开(公告)日：2012-07-24

申请号：US12845308

申请日：2010-07-28

Applicant: Frederic S. Diana ,  Aurelien J. F. David ,  Pierre M. Petroff ,  Claude C. A. Weisbuch

Inventor： Frederic S. Diana ,  Aurelien J. F. David ,  Pierre M. Petroff ,  Claude C. A. Weisbuch

IPC: H01L33/00

CPC classification number: H01L33/20 ,  B82Y20/00 ,  G02B2006/1213 ,  H01L33/502 ,  H01L2933/0083

Abstract: A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.

Abstract translation: 一种高效率的发光二极管（LED），包括衬底，在衬底上生长的缓冲层（如果需要这样的一层），第一有源区包括被电注入的一次发射物质（PES），第二有源区 包括由从PES发射的光被光泵浦的二次发射物质（SES）的区域和光子晶体，其中所述光子晶体用作衍射光栅以提供高的光提取效率，以提供SES的有效激发和/ 或调制远场发射模式。

公开(公告)号：US20110291130A1

公开(公告)日：2011-12-01

申请号：US13195279

申请日：2011-08-01

Applicant: Frédéric S. Diana ,  Aurélien J. F. David ,  Pierre M. Petroff ,  Claudr C.A. Weisbuch

Inventor： Frédéric S. Diana ,  Aurélien J. F. David ,  Pierre M. Petroff ,  Claudr C.A. Weisbuch

IPC: H01L33/58 ,  H01L33/02

CPC classification number: H01L33/20 ,  B82Y20/00 ,  G02B2006/1213 ,  H01L33/502 ,  H01L2933/0083

Abstract: A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.

Abstract translation: 一种高效率的发光二极管（LED），包括衬底，在衬底上生长的缓冲层（如果需要这样的一层），第一有源区包括被电注入的一次发射物质（PES），第二有源区 包括由从PES发射的光被光泵浦的二次发射物质（SES）的区域和光子晶体，其中所述光子晶体用作衍射光栅以提供高的光提取效率，以提供SES的有效激发和/ 或调制远场发射模式。

公开(公告)号：US06583436B2

公开(公告)日：2003-06-24

申请号：US09893760

申请日：2001-06-27

Applicant: Pierre M. Petroff ,  James S. Speck ,  Jo Anna Johnson ,  Hao Lee

Inventor： Pierre M. Petroff ,  James S. Speck ,  Jo Anna Johnson ,  Hao Lee

IPC: H01L2906

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01L29/127

Abstract: A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor layer, and spacer layer. The unit cell dimensions, orientation and the number of QDs in the basis are tunable. Moreover, a 2D lattice can be replicated at periodic intervals along the growth direction to form a three-dimensional (3D) lattice of QDs.

公开(公告)号：US4794440A

公开(公告)日：1988-12-27

申请号：US142316

申请日：1987-12-30

Applicant: Federico Capasso ,  Arthur C. Gossard ,  John R. Hayes ,  Roger J. Malik ,  Pierre M. Petroff

Inventor： Federico Capasso ,  Arthur C. Gossard ,  John R. Hayes ,  Roger J. Malik ,  Pierre M. Petroff

IPC: H01L29/737 ,  H01L29/72

CPC classification number: H01L29/7371

Abstract: A heterojunction bipolar transistor having means for changing carrier transport properties is described.

Abstract translation: 描述了具有用于改变载流子传输特性的装置的异质结双极晶体管。

公开(公告)号：US07906775B2

公开(公告)日：2011-03-15

申请号：US11633043

申请日：2006-12-04

Applicant: James R. Heath ,  Pierre M. Petroff ,  Nicholas A. Melosh

Inventor： James R. Heath ,  Pierre M. Petroff ,  Nicholas A. Melosh

IPC: H01L21/02

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/76802 ,  H01L21/76838 ,  Y10S977/755 ,  Y10S977/76 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/938

Abstract: Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.

Abstract translation: 制造具有纳米宽度和纳米分离距离的金属或非金属线，无需光刻。 电线是以两步法制成的，包括以所需尺寸形成电线并将其转移到平面衬底。 导线的尺寸和间距由超晶格形式的不同材料的交替层的厚度决定。 通过将期望的材料蒸发到已经被选择性蚀刻以提供层之间的高度对比度的超晶格上来产生电线。 然后将由此形成在一组超晶格层上的电线转移到基底。

公开(公告)号：US4591889A

公开(公告)日：1986-05-27

申请号：US651044

申请日：1984-09-14

Applicant: Arthur C. Gossard ,  Pierre M. Petroff

Inventor： Arthur C. Gossard ,  Pierre M. Petroff

IPC: H01L29/812 ,  H01L21/20 ,  H01L21/203 ,  H01L21/26 ,  H01L21/338 ,  H01L29/06 ,  H01L29/15 ,  H01L29/775 ,  H01L29/778 ,  H01L29/80 ,  H01L47/00 ,  H01S5/00 ,  H01L27/12

CPC classification number: B82Y10/00 ,  H01L29/151 ,  H01L29/158 ,  H01L29/775

Abstract: Semiconductor devices having submonolayer superlattices are described. These devices may have periodic compositional variations in a direction parallel to the substrate surface as well as in the perpendicular direction. Such superlattices are useful in numerous types of devices including lasers, transistors, etc.

Abstract translation: 描述具有亚单层超晶格的半导体器件。 这些器件可能在平行于衬底表面的方向以及垂直方向上具有周期性的组成变化。 这种超晶格在许多类型的器件中是有用的，包括激光器，晶体管等

公开(公告)号：US07470954B2

公开(公告)日：2008-12-30

申请号：US11274916

申请日：2005-11-14

Applicant: Seung-Heon Lee ,  Frédéric S. Diana ,  Antonio Badolato ,  Pierre M. Petroff ,  Edward J. Kramer

Inventor： Seung-Heon Lee ,  Frédéric S. Diana ,  Antonio Badolato ,  Pierre M. Petroff ,  Edward J. Kramer

IPC: H01L29/94 ,  H01L31/062

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/706 ,  H01F1/009 ,  H01F1/15316

Abstract: A method and resultant device, in which metal nanoparticles are self-assembled into two-dimensional lattices. A periodic hole pattern (wells) is fabricated on a photoresist substrate, the wells having an aspect ratio of less than 0.37. The nanoparticles are synthesized within inverse micelles of a polymer, preferably a block copolymer, and are self-assembled onto the photoresist nanopatterns. The nanoparticles are selectively positioned in the holes due to the capillary forces related to the pattern geometry, with a controllable number of particles per lattice point.

Abstract translation: 金属纳米粒子自组装成二维晶格的方法和结果器件。 在光致抗蚀剂基底上制造周期性孔图案（孔），孔的纵横比小于0.37。 纳米颗粒在聚合物的反胶束中合成，优选嵌段共聚物，并且自组装到光致抗蚀剂纳米图案上。 由于与图案几何形状相关的毛细力，纳米颗粒被选择性地定位在孔中，每个晶格点具有可控数量的颗粒。

公开(公告)号：US07161168B2

公开(公告)日：2007-01-09

申请号：US10521714

申请日：2003-07-28

Applicant: James R. Heath ,  Pierre M. Petroff ,  Nicholas A. Melosh

Inventor： James R. Heath ,  Pierre M. Petroff ,  Nicholas A. Melosh

IPC: H01L29/06

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/76802 ,  H01L21/76838 ,  Y10S977/755 ,  Y10S977/76 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/938

Abstract: Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.

Abstract translation: 制造具有纳米宽度和纳米分离距离的金属或非金属线，无需光刻。 电线是以两步法制成的，包括以所需尺寸形成电线并将其转移到平面衬底。 导线的尺寸和间距由超晶格形式的不同材料的交替层的厚度决定。 通过将期望的材料蒸发到已经被选择性蚀刻以提供层之间的高度对比度的超晶格上来产生电线。 然后将由此形成在一组超晶格层上的电线转移到基底。

公开(公告)号：US06541788B2

公开(公告)日：2003-04-01

申请号：US09428593

申请日：1999-10-27

Applicant: Pierre M. Petroff ,  Naoto Horiguchi

Inventor： Pierre M. Petroff ,  Naoto Horiguchi

IPC: H01L2906

CPC classification number: B82Y20/00 ,  B82Y10/00 ,  G02F2/02 ,  H01L31/0352

Abstract: A method and device for converting light from a first wavelength to a second wavelength. The method comprises the steps of exciting an electron in a quantum dot with an incident infrared photon having the first wavelength, the excited electron having a first energy, tunneling the excited electron through a barrier into a stress induced quantum dot, and recombining the excited electron with a hole in the stress induced quantum dot, therein producing a photon having the second wavelength, typically in the visible range. The device comprises a substrate, a spacer layer, coupled to the substrate, a second layer, coupled to the spacer layer, wherein the second layer comprises a different material than the spacer layer, a third layer, coupled to the second layer, wherein the third layer comprises at least one quantum dot, a fourth layer, coupled to the third layer, comprising a quantum well corresponding to each quantum dot in the third layer, a fifth layer, coupled to the fourth layer, wherein the fourth layer and fifth layer comprise a strain induced quantum dot corresponding to each quantum dot in the third layer; and a sixth layer, coupled to the fifth layer, the substrate and the sixth layer for contacting the device.

Abstract translation: 一种用于将来自第一波长的光转换成第二波长的方法和装置。 该方法包括以下步骤：用具有第一波长的入射红外光子激发量子点中的电子，激发的电子具有第一能量，将被激发的电子通过势垒隧穿到应力诱导的量子点中，并将激发的电子 在应力诱导量子点处具有孔，其中产生具有第二波长的光子，通常处于可见光范围内。 该装置包括耦合到衬底的衬底，间隔层，耦合到间隔层的第二层，其中第二层包括与间隔层不同的材料，第三层，耦合到第二层，其中第 第三层包括耦合到第三层的至少一个量子点，第四层，包括与第三层中的每个量子点对应的量子阱，耦合到第四层的第五层，其中第四层和第五层 包括对应于第三层中的每个量子点的应变诱发量子点; 以及耦合到第五层的第六层，用于接触器件的衬底和第六层。

公开(公告)号：US4860068A

公开(公告)日：1989-08-22

申请号：US149994

申请日：1988-01-27

Applicant: Arthur C. Gossard ,  Robert C. Miller ,  Pierre M. Petroff

Inventor： Arthur C. Gossard ,  Robert C. Miller ,  Pierre M. Petroff

IPC: H01L21/20 ,  H01L29/205

CPC classification number: H01L29/205 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546

Abstract: Single GaAs quantum well or single GaAs active layer or single reverse interface structures with Al.sub.x Ga.sub.1-x As barrier layers have improved qualities when one or more narrow bandgap GaAs getter-smoothing layers, which are thin, are grown and are incorporated in the barrier layer before and in close proximity to the active layer.

Abstract translation: 具有Al x Ga 1-x As阻挡层的单个GaAs量子阱或单个GaAs有源层或单个反向界面结构具有改进的质量，当薄的一个或多个窄带隙GaAs吸气剂平滑层生长并且被​​并入阻挡层之前和 靠近活动层。