公开(公告)号：US09429544B2

公开(公告)日：2016-08-30

申请号：US13417399

申请日：2012-03-12

申请人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

发明人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC分类号： G01R33/02 ,  G01N27/72 ,  G01N27/74 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/05 ,  G01N15/06

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

摘要翻译： 包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响 磁性层产生补偿横向磁各向异性。 通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

公开(公告)号：US08567045B2

公开(公告)日：2013-10-29

申请号：US13367355

申请日：2012-02-06

申请人： Moris Dovek ,  Glen Garfunkel ,  Po Kang Wang

发明人： Moris Dovek ,  Glen Garfunkel ,  Po Kang Wang

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/2657 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

摘要翻译： 随着轨道密度的增加，在写入给定的轨道时，不会无意中在相邻轨道中写入数据变得越来越重要。 通过将ABS平面中的材料的宽度限制在写入间隙内，已经克服了这个问题。 比这个更宽的下极的部分从ABS背面向后凹陷，从而大大降低了对相邻轨道的磁影响。 描述了包含这一概念的写入头的四个不同实施例以及对其制造的一般过程的描述。

公开(公告)号：US20120169332A1

公开(公告)日：2012-07-05

申请号：US13417399

申请日：2012-03-12

申请人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

发明人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC分类号： G01R33/02 ,  B23P17/04

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

摘要翻译： 包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响 磁性层产生补偿横向磁各向异性。 通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

公开(公告)号：US07715224B2

公开(公告)日：2010-05-11

申请号：US11787330

申请日：2007-04-16

申请人： Tai Min ,  Po Kang Wang

发明人： Tai Min ,  Po Kang Wang

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/16

摘要： An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture.

摘要翻译： 描述了不会偶然写入半选择的存储元件的MRAM及其制造方法。 该MRAM的主要特征是与分段位线结构一起使用的C形存储元件。

公开(公告)号：US07696548B2

公开(公告)日：2010-04-13

申请号：US11200380

申请日：2005-08-09

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L29/94

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US20100065935A1

公开(公告)日：2010-03-18

申请号：US12284066

申请日：2008-09-18

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.

摘要翻译： 公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。 通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层 。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

公开(公告)号：US07598597B2

公开(公告)日：2009-10-06

申请号：US12290703

申请日：2008-11-03

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： H01L21/00

CPC分类号： H01L27/222 ,  G11C11/1675 ,  G11C11/1695

摘要： A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

摘要翻译： 在主屏蔽层下方的第二屏蔽层被添加到分段的MRAM阵列。 图案化附加屏蔽，以便每位片提供一个屏蔽。 在这些分段屏蔽的端部处放置纵向偏置突片确保每个分段屏蔽是单个磁畴，使其作为防止非常小的杂散场的屏蔽非常有效。

公开(公告)号：US20090096043A1

公开(公告)日：2009-04-16

申请号：US11973751

申请日：2007-10-10

申请人： Tai Min ,  Po Kang Wang

发明人： Tai Min ,  Po Kang Wang

IPC分类号： H01L43/08 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/1675 ,  H01L43/12

摘要： We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The strength of the switching field, Hs of the cell is controlled by the magnetic anisotropy of the cell which, in turn, is controlled by a combination of the shape anisotropy and the stress and magnetostriction of the cell free layer. The coefficient of magnetostriction of the free layer can be adjusted by methods such as adding Nb or Hf to alloys of Ni, Fe, Co and B or by forming the free layer as a lamination of layers having different values of their coefficients of magnetostriction. Thus, by tuning the coefficient of magnetostriction of the cell free layer it is possible to produce a switching field of sufficient magnitude to render the cell thermally stable while maintaining a desirable switching current.

摘要翻译： 我们描述了使用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM单元的制造过程和结构。 开关场的强度，电池的Hs由电池的磁各向异性控制，电池的磁各向异性又由形状各向异性和无电解层的应力和磁致伸缩的组合控制。 自由层的磁致伸缩系数可以通过添加Nb，Hf等Ni，Fe，Co，B的合金的方法来进行，也可以通过形成自由层作为其磁致伸缩系数不同的层的叠层来进行。 因此，通过调谐无电解层的磁致伸缩系数，可以产生足够大的开关场，使电池热稳定，同时保持理想的开关电流。

公开(公告)号：US20090057794A1

公开(公告)日：2009-03-05

申请号：US12290410

申请日：2008-10-30

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  G11C11/15 ,  H01L27/222

摘要： The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

摘要翻译： 本发明提供一种包括用于产生磁场的导线的MRAM。 后者通过添加由软铁磁材料的单个平面制成的磁通集中器，通过反铁磁层磁稳定。 除了非常容易制造之外，这种结构有助于其磁性能的密切控制，包括均匀性和畴结构。

公开(公告)号：US07456029B2

公开(公告)日：2008-11-25

申请号：US11476495

申请日：2006-06-28

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  G11C11/15 ,  H01L27/222

摘要： The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

摘要翻译： 本发明提供一种包括用于产生磁场的导线的MRAM。 后者通过添加由软铁磁材料的单个平面制成的磁通集中器，通过反铁磁层磁稳定。 除了非常容易制造之外，这种结构有助于其磁性能的密切控制，包括均匀性和畴结构。