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公开(公告)号：US07807225B2
公开(公告)日：2010-10-05
申请号：US11698623
申请日：2007-01-26
IPC分类号： C23C16/00
CPC分类号： G02B1/10 , C23C16/308 , C23C16/509 , G02B1/11
摘要： A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.
摘要翻译： 提供了用于形成SiOXNY薄膜的高密度等离子体方法。 该方法提供衬底并引入硅（Si）前体。 使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。 结果，形成SiOXNY薄膜，其中（X + Y <2和Y> 0）。 SiOXNY薄膜可以是化学计量的或非化学计量的。 SiOXNY薄膜可以分级，这意味着X和Y的值随SiOXNY薄膜的厚度而变化。 此外，该方法能够实现SiOXNY薄膜多层结构的原位沉积，其中不同的层可以是化学计量的，非化学计量的，分级的，以及上述类型的SiOXNY薄膜的组合。
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公开(公告)号：US07759736B2
公开(公告)日：2010-07-20
申请号：US11524783
申请日：2006-09-21
申请人： Pooran Chandra Joshi
发明人： Pooran Chandra Joshi
IPC分类号： H01L27/01
CPC分类号： H01L29/78603 , H01L29/4908 , H01L29/66757 , H01L29/78609
摘要： A deposition oxide interface with improved oxygen bonding and a method for bonding oxygen in an oxide layer are provided. The method includes depositing an M oxide layer where M is a first element selected from a group including elements chemically defined as a solid and having an oxidation state in a range of +2 to +5, plasma oxidizing the M oxide layer at a temperature of less than 400° C. using a high density plasma source, and in response to plasma oxidizing the M oxide layer, improving M-oxygen bonding in the M oxide layer. The plasma oxidation process diffuses excited oxygen radicals into the oxide layer. The plasma oxidation is performed at specified parameters including temperature, power density, pressure, process gas composition, and process gas flow. In some aspects of the method, M is silicon, and the oxide interface is incorporated into a thin film transistor.
摘要翻译： 提供具有改善的氧键的沉积氧化物界面和氧化层中的氧键合方法。 该方法包括沉积M氧化物层，其中M是选自化学上定义为固体且具有+2至+5范围内的氧化态的元素的第一元素，在氧化层中氧化氧化层的温度为 小于400℃，使用高密度等离子体源，并且响应于等离子体氧化M氧化物层，改善M氧化物层中的M-氧键。 等离子体氧化过程将激发的氧自由基扩散到氧化物层中。 等离子体氧化在包括温度，功率密度，压力，工艺气体成分和工艺气体流量在内的特定参数下进行。 在该方法的一些方面，M是硅，并且氧化物界面被结合到薄膜晶体管中。
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3.发明授权Graded junction silicon nanocrystal embedded silicon oxide electroluminescence device 有权分级结硅纳米晶体嵌入式氧化硅电致发光器件公开(公告)号：US07723913B2
公开(公告)日：2010-05-25
申请号：US12168771
申请日：2008-07-07
CPC分类号： C23C16/30 , C23C16/24 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02532 , H01L21/02595
摘要： A silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device and associated fabrication process are presented. The method provides a substrate bottom electrode, and forms a plurality of Si nanocrystal embedded SiOx film layers overlying the bottom electrode, where X is less than 2. Each SiOx film layer has a Si excess concentration in a range of about 5 to 30%. The outside film layers sandwich an inner film layer having a lower concentration of Si nanocrystals. Alternately stated, the outside Si nanocrystal embedded SiOx film layers have a higher electrical conductivity than a sandwiched inner film layer. A transparent top electrode is formed over the plurality of Si nanocrystal embedded SiOx film layers. The plurality of Si nanocrystal embedded SiOx film layers are deposited using a high density plasma-enhanced chemical vapor deposition (HD PECVD) process. The HD PECVD process initially deposits SiOx film layers, which are subsequently annealed.
摘要翻译： 介绍了一种硅（Si）纳米晶体内置Si氧化物电致发光（EL）器件及其制造工艺。 该方法提供衬底底部电极，并且形成多个覆盖底部电极的Si纳米晶体的嵌入的SiO x膜层，其中X小于2.每个SiO x膜层的Si过量浓度在约5-30％的范围内。 外层膜层叠具有较低浓度的Si纳米晶体的内膜层。 或者说，外部Si纳米晶体埋入的SiOx膜层具有比夹层内膜层更高的导电性。 在多个Si纳米晶体嵌入的SiOx膜层上形成透明顶部电极。 使用高密度等离子体增强化学气相沉积（HD PECVD）工艺沉积多个Si纳米晶体嵌入的SiOx膜层。 HD PECVD工艺首先沉积SiO x膜层，随后退火。
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公开(公告)号：US07723781B2
公开(公告)日：2010-05-25
申请号：US12108333
申请日：2008-04-23
IPC分类号： H01L29/78
CPC分类号： H01L29/78642 , C23C16/24 , C23C16/45523 , C23C16/509 , H01L21/02164 , H01L21/0234 , H01L21/049 , H01L21/31612 , H01L29/66666 , H01L29/6675
摘要： A method is provided for forming a low-temperature vertical gate insulator in a vertical thin-film transistor (V-TFT) fabrication process. The method comprises: forming a gate, having vertical sidewalls and a top surface, overlying a substrate insulation layer; depositing a silicon oxide thin-film gate insulator overlying the gate; plasma oxidizing the gate insulator at a temperature of less than 400° C., using a high-density plasma source; forming a first source/drain region overlying the gate top surface; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall, in the gate insulator interposed between the first and second source/drain regions. When the silicon oxide thin-film gate insulator is deposited overlying the gate a Si oxide layer, a low temperature deposition process can be used, so that a step-coverage of greater than 65% can be obtained.
摘要翻译： 提供一种用于在垂直薄膜晶体管（V-TFT）制造工艺中形成低温垂直栅极绝缘体的方法。 该方法包括：形成具有垂直侧壁和顶表面的栅极，覆盖衬底绝缘层; 沉积覆盖栅极的氧化硅薄膜栅极绝缘体; 使用高密度等离子体源在低于400℃的温度下等离子体氧化栅极绝缘体; 形成覆盖所述栅极顶表面的第一源极/漏极区域; 在第一栅极侧壁附近形成覆盖衬底绝缘层的第二源极/漏极区域; 以及在位于第一和第二源极/漏极区之间的栅极绝缘体中形成覆盖第一栅极侧壁的沟道区。 当氧化硅薄膜栅极绝缘体沉积在栅极上覆盖Si氧化物层时，可以使用低温沉积工艺，从而可以获得大于65％的阶梯覆盖率。
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5.发明申请公开(公告)号：US20080224164A1
公开(公告)日：2008-09-18
申请号：US12126430
申请日：2008-05-23
CPC分类号： C23C16/30 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/31608 , H01L33/005 , H01L33/18 , H01L33/34
摘要： A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.
摘要翻译： 使用硅（Si）纳米晶体Si绝缘膜的发光器件具有相关的制造方法。 该方法提供掺杂半导体或金属底电极。 使用高密度等离子体增强化学气相沉积（HDPECVD）工艺，淀积厚度在30至200纳米（nm）范围内的半导体电极上的Si绝缘体膜。 例如，膜可以是SiO x，其中X小于2，Si 3 N x，其中X小于4，或SiC x，其中X小于1.Si绝缘膜退火，结果Si纳米晶体为 在电影中形成。 然后，形成覆盖Si绝缘膜的透明金属电极。 退火的Si纳米晶SiO x膜具有小于20伏特的导通电压，如关于大于0.03瓦/平方米的表面发射功率所限定的。
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公开(公告)号：US20080079663A1
公开(公告)日：2008-04-03
申请号：US11821148
申请日：2007-06-22
IPC分类号： G09G3/20
摘要： A pixel-by-pixel, digitally-addressable, pixelated, precursor, fluid-assay, active-matrix micro-structure including plural pixels formed on a substrate, wherein each pixel includes (a) at least one non-functionalized, digitally-addressable assay sensor, and (b), disposed operatively adjacent this sensor, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the at least one assay sensor, an ambient electromagnetic field environment which is structured to assist in functionalizing, as a possession on said at least one assay sensor, at least one digitally-addressable assay site which will display an affinity for a selected fluid-assay material.
摘要翻译： 逐像素，可数字寻址，像素化，前体，流体测定，包括形成在衬底上的多个像素的有源矩阵微结构，其中每个像素包括（a）至少一个非功能化的，可数字寻址的 和（b），其可操作地邻近该传感器设置，可数字寻址和激励的电磁场产生结构，其被选择性地激励以在所述至少一个测定传感器附近产生环境电磁场环境，所述环境电磁场环境被构造 在所述至少一个测定传感器上辅助功能化至少一个可显示对所选择的流体测定材料的亲和性的可数字寻址的测定位点。
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7.发明授权Silicon oxide-nitride-carbide thin-film with embedded nanocrystalline semiconductor particles 有权具有嵌入式纳米晶半导体颗粒的氧化硅 - 氮化碳 - 碳化物薄膜公开(公告)号：US09222169B2
公开(公告)日：2015-12-29
申请号：US12467969
申请日：2009-05-18
IPC分类号： H01L21/20 , C23C16/30 , C23C16/509 , C23C16/56 , H01L21/02 , H01L21/316 , H01L33/42
CPC分类号： C23C16/30 , C23C16/5096 , C23C16/56 , H01L21/02126 , H01L21/02274 , H01L21/02321 , H01L21/02337 , H01L21/0234 , H01L21/02532 , H01L21/02601 , H01L21/0262 , H01L21/31608 , H01L33/42
摘要： A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z≧0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.
摘要翻译： 提供太阳能呼叫以及用于形成具有可调带隙的半导体纳米晶硅绝缘薄膜的方法。 该方法提供了一种衬底，并将硅（Si）源气体与以下源气体中的至少一种：锗（Ge），氧，氮或碳引入高密度（HD）等离子体增强化学气相沉积（PECVD） ）过程。 嵌入了纳米晶体半导体材料的SiO x N y C z薄膜沉积在衬底上，其中x，y，z≥0，半导体材料是Si，Ge或Si和Ge的组合。 结果，在SiOxNyCz薄膜中形成的带隙在约1.9〜3.0电子伏特（eV）的范围内。 通常，半导体纳米颗粒的尺寸在1至20nm的范围内。
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公开(公告)号：US20120245049A1
公开(公告)日：2012-09-27
申请号：US13488501
申请日：2012-06-05
CPC分类号： C12Q1/6813 , Y10S436/805
摘要： A method of performing a fluid-material assay employing a device including at least one active pixel having a sensor with an assay site functionalized for selected fluid-assay material. The method includes exposing the pixel's sensor assay site to such material, and in conjunction with such exposing, and employing the active nature of the pixel, remotely requesting from the pixel's sensor assay site an assay-result output report. The method further includes, in relation to the employing step, creating, relative to the sensor's assay site in the at least one pixel, a predetermined, pixel-specific electromagnetic field environment.
摘要翻译： 使用包括至少一个具有传感器的活性像素的装置进行流体材料测定的方法，所述传感器具有用于所选流体测定材料功能化的测定位点。 该方法包括将像素的传感器测定位点暴露于这种材料，并结合这样的曝光，并采用像素的主动特性，从像素的传感器测定位点远程请求测定结果输出报告。 该方法还包括关于采用步骤，相对于至少一个像素中的传感器的测定位置产生预定的像素特定的电磁场环境。
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公开(公告)号：US08232108B2
公开(公告)日：2012-07-31
申请号：US11827176
申请日：2007-07-10
IPC分类号： G01N21/00
CPC分类号： B01J19/0046 , B01J2219/00527 , B01J2219/00605 , B01J2219/00626 , B01J2219/00653 , B01J2219/00659 , B01J2219/00695 , B01J2219/00711 , B01J2219/00713 , B01J2219/00716 , B82Y30/00 , Y10S436/805
摘要： A method for producing an active-matrix, fluid-assay micro-structure including, utilizing low-temperature TFT and Si technology, establishing preferably on a glass or plastic substrate a matrix array of digitally-addressable, assay-material-specific-functionalizable pixels, and employing pixel-specific digital addressing for selected, array-established pixels, individually functionalizing these pixels.
摘要翻译： 一种用于生产活性基质流体测定微结构的方法，包括利用低温TFT和Si技术，优选在玻璃或塑料基材上建立可数字寻址的测定材料特异性可官能化像素的矩阵阵列 并且针对所选择的阵列建立的像素采用像素特定的数字寻址，分别对这些像素进行功能化。
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10.发明授权公开(公告)号：US07998884B2
公开(公告)日：2011-08-16
申请号：US12126430
申请日：2008-05-23
IPC分类号： H01L21/469
CPC分类号： C23C16/30 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/31608 , H01L33/005 , H01L33/18 , H01L33/34
摘要： A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.
摘要翻译： 使用硅（Si）纳米晶体Si绝缘膜的发光器件具有相关的制造方法。 该方法提供掺杂半导体或金属底电极。 使用高密度等离子体增强化学气相沉积（HDPECVD）工艺，淀积厚度在30至200纳米（nm）范围内的半导体电极上的Si绝缘体膜。 例如，膜可以是SiO x，其中X小于2，Si 3 N x，其中X小于4，或SiC x，其中X小于1.Si绝缘膜退火，结果Si纳米晶体为 在电影中形成。 然后，形成覆盖Si绝缘膜的透明金属电极。 退火的Si纳米晶SiO x膜具有小于20伏特的导通电压，如关于大于0.03瓦/平方米的表面发射功率所限定的。
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