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    Methods of forming capacitors
    1.
    发明授权
    Methods of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US08946043B2

    公开(公告)日：2015-02-03

    申请号：US13332816

    申请日：2011-12-21

    申请人： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    发明人： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    IPC分类号： H01L21/02

    CPC分类号： H01L28/92 ,  H01L21/32133 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/90

    摘要： A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

    摘要翻译： 形成电容器的方法包括在衬底上形成支撑材料。 第一电容器电极形成在支撑材料中的单个开口内。 使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。 使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。 在第一电容器电极的侧壁的外部和内部上形成电容器电介质。 在电容器电介质上形成第二电容电极。

    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors
    2.
    发明申请
    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors 有权
    多材料结构，半导体结构和形成电容器的方法

    公开(公告)号：US20140015097A1

    公开(公告)日：2014-01-16

    申请号：US13546927

    申请日：2012-07-11

    申请人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

    发明人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

    IPC分类号： H01L29/02 ,  H01L21/02

    CPC分类号： H01L28/75 ,  B82Y30/00 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90 ,  Y10S977/932 ,  Y10T428/265

    摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

    摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。

    Methods of Forming Semiconductor Constructions
    3.
    发明申请
    Methods of Forming Semiconductor Constructions 有权
    形成半导体结构的方法

    公开(公告)号：US20120322266A1

    公开(公告)日：2012-12-20

    申请号：US13593373

    申请日：2012-08-23

    申请人： Prashant Raghu

    发明人： Prashant Raghu

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30604 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

    摘要： The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.

    摘要翻译： 本发明包括使用其中含有含磷和氧的化合物的蚀刻组合物从含钛容器结构中除去硅的方法。 蚀刻组合物可以例如包括氢氧化铵和四甲基氢氧化铵中的一种或两种。 本发明还包括从含钛电容器电极之间除去含钛晶须的方法。 这种去除可以例如通过使用氢氟酸，氟化铵，硝酸和过氧化氢中的一种或多种的蚀刻来实现。

    Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures
    6.
    发明授权
    Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures 有权
    形成电容器的方法，以及利用含二氧化硅掩模结构的方法

    公开(公告)号：US08183157B2

    公开(公告)日：2012-05-22

    申请号：US13032492

    申请日：2011-02-22

    申请人： Naraji B Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

    发明人： Naraji B Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

    IPC分类号： H01L21/311

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

    摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

    摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

    Methods of forming capacitors
    7.
    发明授权
    Methods of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US07713813B2

    公开(公告)日：2010-05-11

    申请号：US11218229

    申请日：2005-08-31

    申请人： Prashant Raghu

    发明人： Prashant Raghu

    IPC分类号： H01L21/8242

    CPC分类号： H01L21/30604 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

    摘要： The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.

    摘要翻译： 本发明包括使用其中含有含磷和氧的化合物的蚀刻组合物从含钛容器结构中除去硅的方法。 蚀刻组合物可以例如包括氢氧化铵和四甲基氢氧化铵中的一种或两种。 本发明还包括从含钛电容器电极之间除去含钛晶须的方法。 这种去除可以例如通过使用氢氟酸，氟化铵，硝酸和过氧化氢中的一种或多种的蚀刻来实现。

    Methods Of Forming Capacitors, And Methods Of Utilizing Silicon Dioxide-Containing Masking Structures
    8.
    发明申请
    Methods Of Forming Capacitors, And Methods Of Utilizing Silicon Dioxide-Containing Masking Structures 有权
    形成电容器的方法，以及使用含二氧化硅掩蔽结构的方法

    公开(公告)号：US20100099232A1

    公开(公告)日：2010-04-22

    申请号：US12252499

    申请日：2008-10-16

    申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    IPC分类号： H01L21/02 ,  H01G4/30 ,  H01L21/311

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

    摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

    摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

    Transistor structures
    9.
    发明授权
    Transistor structures 有权
    晶体管结构

    公开(公告)号：US07659560B2

    公开(公告)日：2010-02-09

    申请号：US11716433

    申请日：2007-03-08

    申请人： Sanh D. Tang ,  Gordon A. Haller ,  Prashant Raghu ,  Ravi Iyer

    发明人： Sanh D. Tang ,  Gordon A. Haller ,  Prashant Raghu ,  Ravi Iyer

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66787

    摘要： A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.

    摘要翻译： 晶体管栅极形成方法包括在线路开口内形成金属层，并在金属层的开口内形成填充层。 填充层相对于金属层基本上可选择性地蚀刻。 晶体管结构包括线路开口，开口内的电介质层，开口内的电介质层上的金属层，以及开口内的金属层上的填充层。 如果填充层被金属层的增加的厚度代替，则金属层/填充层组合的内在特性小于否则会存在。 本发明至少应用于三维晶体管结构。