摘要:
The present invention provides an environment-friendly manganese brass alloy, which comprises 55˜65 wt % of Cu, 1.0˜6.5 wt % of Mn, 0.2˜3.0 wt % of Al, 0˜3.0 wt % of Fe, 0.3˜2.0 wt % of Sn, 0.01˜0.3 wt % of Mg, 0˜0.3 wt % of Bi and/or 0˜0.2 wt % of Pb, the balance being Zn and unavoidable impurities. The alloys not only have superior mechanical properties, castability, cutability and corrosion resistance, especially stress corrosion resistance properties, but also have the advantages of low manufacturing costs and simple manufacturing process etc, which is suitable for making components through forging, casting, cutting and other manufacturing methods, especially suitable for making water tap bodies and valves through forging, casting and cutting processes.
摘要:
The present invention provides an environment-friendly manganese brass alloy, which comprises 55˜65 wt % of Cu, 1.0˜6.5 wt % of Mn, 0.2˜3.0 wt % of Al, 0˜3.0 wt % of Fe, 0.3˜2.0 wt % of Sn, 0.01˜0.3 wt % of Mg, 0˜0.3 wt % of Bi and/or 0˜0.2 wt % of Pb, the balance being Zn and unavoidable impurities. The alloys not only have superior mechanical properties, castability, cutability and corrosion resistance, especially stress corrosion resistance properties, but also have the advantages of low manufacturing costs and simple manufacturing process etc, which is suitable for making components through forging, casting, cutting and other manufacturing methods, especially suitable for making water tap bodies and valves through forging, casting and cutting processes.
摘要:
A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.
摘要:
A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.
摘要:
An assembly and method for delivering a reactant material onto a substrate is described and which includes a delivery member which has a first surface, and an opposite second surface, and wherein the second surface is positioned adjacent to a substrate, and wherein an elongated substantially continuous channel is formed in the second surface of the delivery member, and which is coupled in fluid flowing relation relative to a source of reactant material, and wherein the elongated substantially continuous channel delivers the reactant material onto the substrate.