PHOTOACID GENERATOR COMPOUNDS AND COMPOSITIONS
    2.
    发明申请
    PHOTOACID GENERATOR COMPOUNDS AND COMPOSITIONS 有权
    光电发生器化合物和组合物

    公开(公告)号:US20110008732A1

    公开(公告)日:2011-01-13

    申请号:US12878211

    申请日:2010-09-09

    IPC分类号: G03F7/004 C07C305/18 G03F7/20

    摘要: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

    摘要翻译: 本发明提供各种离子和非离子光致酸发生剂化合物。 还提供了包含新型离子和非离子光酸产生剂化合物的光致抗蚀剂组合物。 本发明还提供了制备和使用本文公开的光致酸产生剂化合物和光致抗蚀剂组合物的方法。 化合物和组合物可用作用于各种微细加工应用的化学放大抗蚀剂组合物中的光活性组分。

    PHOTOACID GENERATOR COMPOUNDS AND COMPOSITIONS
    3.
    发明申请
    PHOTOACID GENERATOR COMPOUNDS AND COMPOSITIONS 有权
    光电发生器化合物和组合物

    公开(公告)号:US20090136868A1

    公开(公告)日:2009-05-28

    申请号:US12255266

    申请日:2008-10-21

    摘要: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

    摘要翻译: 本发明提供各种离子和非离子光致酸发生剂化合物。 还提供了包含新型离子和非离子光酸产生剂化合物的光致抗蚀剂组合物。 本发明还提供了制备和使用本文公开的光致酸产生剂化合物和光致抗蚀剂组合物的方法。 化合物和组合物可用作用于各种微细加工应用的化学放大抗蚀剂组合物中的光活性组分。

    Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
    5.
    发明申请
    Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing 审中-公开
    辐射敏感,湿发展底部抗反射涂层组合物及其在半导体制造中的应用

    公开(公告)号:US20090098490A1

    公开(公告)日:2009-04-16

    申请号:US11974946

    申请日:2007-10-16

    IPC分类号: G03C5/56

    摘要: The present invention is directed to novel radiation-sensitive, wet developable bottom antireflective coating (DBARC) compositions and their use in semiconductor device manufacturing. The DBARC compositions contain a photoacid generator that produces a photoacid upon exposure to activating radiation. In a photolithographic imaging process, the relatively strong photoacid reduces or eliminates scumming. Further, the relatively large size of the photoacid limits its diffusion through the DBARC, thus minimizing or preventing undercut. The inventive method also limits diffusion of the photoacid by controlling the temperature of the post-exposure baking step. Use of the DBARC compositions with a photoresist in photolithography results in highly resolved features having essentially vertical profiles and no scumming and no undercut, which is critical as microelectronics and semiconductor components become increasingly miniaturized.

    摘要翻译: 本发明涉及新型的辐射敏感性,湿显影性底部抗反射涂层(DBARC)组合物及其在半导体器件制造中的应用。 DBARC组合物含有在暴露于活化辐射时产生光致酸的光致酸产生剂。 在光刻成像过程中,相对较强的光致酸降低或消除浮渣。 此外,较大尺寸的光致酸酸限制其通过DBARC的扩散,从而最小化或防止底切。 本发明的方法还通过控制曝光后烘烤步骤的温度来限制光致酸的扩散。 在光刻中使用具有光致抗蚀剂的DBARC组合物导致高度分辨的特征,其具有基本上垂直的轮廓并且没有浮渣和无底切,这在微电子学和半导体组件变得越来越小型化时是至关重要的。

    Photoacid generator compounds and compositions
    8.
    发明授权
    Photoacid generator compounds and compositions 有权
    光酸发生剂化合物和组合物

    公开(公告)号:US08268531B2

    公开(公告)日:2012-09-18

    申请号:US12878211

    申请日:2010-09-09

    摘要: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

    摘要翻译: 本发明提供各种离子和非离子光致酸发生剂化合物。 还提供了包含新型离子和非离子光酸产生剂化合物的光致抗蚀剂组合物。 本发明还提供了制备和使用本文公开的光致酸产生剂化合物和光致抗蚀剂组合物的方法。 化合物和组合物可用作用于各种微细加工应用的化学放大抗蚀剂组合物中的光活性组分。

    Photoacid generator compounds and compositions
    9.
    发明授权
    Photoacid generator compounds and compositions 有权
    光酸发生剂化合物和组合物

    公开(公告)号:US07824839B2

    公开(公告)日:2010-11-02

    申请号:US12255266

    申请日:2008-10-21

    摘要: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

    摘要翻译: 本发明提供各种离子和非离子光致酸发生剂化合物。 还提供了包含新型离子和非离子光酸产生剂化合物的光致抗蚀剂组合物。 本发明还提供了制备和使用本文公开的光致酸产生剂化合物和光致抗蚀剂组合物的方法。 化合物和组合物可用作用于各种微细加工应用的化学放大抗蚀剂组合物中的光活性组分。