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公开(公告)号:US20060009041A1
公开(公告)日:2006-01-12
申请号:US10885969
申请日:2004-07-06
申请人: R. Iyer , Andrew Lam , Yuji Maeda , Thomas Mele , Faran Nouri , Jacob Smith , Sean Seutter , Sanjeev Tandon , Randhir Singh Thakur , Sunderraj Thirupapuliyur
发明人: R. Iyer , Andrew Lam , Yuji Maeda , Thomas Mele , Faran Nouri , Jacob Smith , Sean Seutter , Sanjeev Tandon , Randhir Singh Thakur , Sunderraj Thirupapuliyur
IPC分类号: H01L21/302
CPC分类号: H01L21/324 , H01L29/1054 , H01L29/6656 , H01L29/7842 , H01L29/7843
摘要: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.