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公开(公告)号:US20090181532A1
公开(公告)日:2009-07-16
申请号:US11971996
申请日:2008-01-10
申请人: David P. Colon , Bradley P. Jones , Ramona Kei , Raymond G. Knauss , Richard P. Volant , Yun-Yu Wang
发明人: David P. Colon , Bradley P. Jones , Ramona Kei , Raymond G. Knauss , Richard P. Volant , Yun-Yu Wang
IPC分类号: H01L21/44
CPC分类号: H01L24/03 , H01L2224/05073 , H01L2224/05093 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/00014
摘要: An interconnect structure having an incomplete via opening is processed to deepen a via opening and to expose a metal line. In case the interconnect structure comprises a metal pad or a blanket metal layer, the metal pad or the metal layer is removed selective to an underlying dielectric layer to expose the incomplete via opening. Another dielectric layer is formed within the incomplete via opening to compensated for differences in the total dielectric thickness above the metal line relative to an optimal dielectric stack. A photoresist is applied thereupon and patterned. An anisotropic etch process for formation of a normal via opening may be employed with no or minimal modification to form a proper via opening and to expose the metal line. A metal pad is formed upon the metal line so that electrical contact is provided between the metal pad and the metal line.
摘要翻译: 处理具有不完全通孔的互连结构以加深通孔开口并露出金属线。 在互连结构包括金属焊盘或覆盖金属层的情况下,金属焊盘或金属层被选择性地移除到下面的电介质层以暴露不完全通孔。 在不完全通孔内部形成另一个介电层,以补偿相对于最佳电介质叠层的金属线上方的总电介质厚度的差异。 在其上施加光致抗蚀剂并图案化。 可以采用用于形成正常通孔的各向异性蚀刻工艺,没有或最小的修改以形成适当的通孔开口并露出金属线。 在金属线上形成金属焊盘,使得金属焊盘和金属线之间提供电接触。