公开(公告)号：US08864915B2

公开(公告)日：2014-10-21

申请号：US13197614

申请日：2011-08-03

申请人： Renhe Jia ,  Adam Brand ,  Liming Zhang ,  Dapeng Wang ,  Tzay-Fa Su ,  Vijay Parihar

发明人： Renhe Jia ,  Adam Brand ,  Liming Zhang ,  Dapeng Wang ,  Tzay-Fa Su ,  Vijay Parihar

IPC分类号： B08B3/00 ,  B08B3/12 ,  H01L31/18 ,  B23K26/16 ,  H01L31/0392 ,  B23K26/36 ,  B08B3/08

CPC分类号： B08B3/08 ,  B08B3/12 ,  B23K26/16 ,  B23K26/364 ,  H01L31/0392 ,  H01L31/18 ,  Y02E10/50

摘要： A method of processing a substrate having a transparent conductive oxide disposed thereon, including: exposing the substrate to a first cleaning solution comprising hydrogen peroxide and ammonium citrate; exposing the substrate to a second cleaning solution having a pH within a range from about 6 to about 7, the second cleaning solution different than the first cleaning solution; agitating the second cleaning solution; and depositing a silicon-containing film on the transparent conductive oxide.

摘要翻译： 一种处理其上设置有透明导电氧化物的衬底的方法，包括：将衬底暴露于包含过氧化氢和柠檬酸铵的第一清洁溶液; 将所述基材暴露于pH在约6至约7的范围内的第二清洗溶液，所述第二清洗溶液不同于所述第一清洗溶液; 搅动第二清洗液; 以及在所述透明导电氧化物上沉积含硅膜。

公开(公告)号：US20070254485A1

公开(公告)日：2007-11-01

申请号：US11735801

申请日：2007-04-16

申请人： Daxin Mao ,  You Wang ,  Junzi Zhao ,  Stan D. Tsai ,  Renhe Jia ,  Jie Diao ,  Yongqi Hu ,  Lakshmanan Karuppiah

发明人： Daxin Mao ,  You Wang ,  Junzi Zhao ,  Stan D. Tsai ,  Renhe Jia ,  Jie Diao ,  Yongqi Hu ,  Lakshmanan Karuppiah

IPC分类号： H01L21/461 ,  H01L21/302 ,  C09K13/00

CPC分类号： H01L21/32125 ,  B23H5/08 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C25F3/02 ,  H01L21/7684

摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In certain embodiments, a composition for processing a substrate having a conductive material layer disposed thereon is provided wherein the composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, an amount of a pH adjusting agent sufficient to provide a pH between about 3 and about 10, anionic polymer abrasive particles, and a solvent. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在某些实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其中所述组合物包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，一定量的pH调节剂， 提供约3至约10个的阴离子聚合物研磨剂颗粒和溶剂之间的pH。 该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

公开(公告)号：US20070235344A1

公开(公告)日：2007-10-11

申请号：US11399560

申请日：2006-04-06

申请人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： B23H5/08

CPC分类号： B23H5/08 ,  C25F3/02 ,  H01L21/32125

摘要： A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.

摘要翻译： 公开了一种用于电化学机械抛光（ECMP）的方法。 通过控制压板和头部的表面速度，控制施加到垫的电流以及预选在全导电抛光垫上的穿孔密度来提高晶片上层的抛光速率和表面光洁度。 ECMP在较低的下压力下产生高得多的去除率，良好的表面光洁度和良好的平面化效率。 通常，增加压板和头部的表面速度将增加表面平滑度。 此外，增加晶片上的电流密度将增加表面平滑度。 在晶片的中心，中间和边缘之间的晶片表面的平滑度几乎没有差别。 对于铜，可以实现10,000 / min以上的去除率。

公开(公告)号：US20070102303A1

公开(公告)日：2007-05-10

申请号：US11556593

申请日：2006-11-03

申请人： HUYEN TRAN ,  RENHE JIA ,  YOU WANG ,  STAN TSAI ,  MARTIN WOHLERT ,  DAXIN MAO

发明人： HUYEN TRAN ,  RENHE JIA ,  YOU WANG ,  STAN TSAI ,  MARTIN WOHLERT ,  DAXIN MAO

IPC分类号： B23H3/00

CPC分类号： B23H5/08

摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conductive material disposed on the barrier material in an amount sufficient to fill feature definitions; polishing the substrate to substantially remove the bulk conductive material; polishing a residual conductive material to expose feature definitions, comprising: applying a first voltage for a first time period, wherein the first voltage is less than the critical voltage; and applying a second voltage for a second time period, wherein the second voltage is greater than the critical voltage.

摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料的方法。 该方法包括提供包括介电特征定义的基底，设置在特征定义中的阻挡材料和以足以填充特征定义的量设置在阻挡材料上的体导电材料; 抛光衬底以基本上去除体导电材料; 抛光残余导电材料以暴露特征定义，包括：施加第一电压第一时间段，其中所述第一电压小于所述临界电压; 以及施加第二时间段的第二电压，其中所述第二电压大于所述临界电压。

公开(公告)号：US20070099552A1

公开(公告)日：2007-05-03

申请号：US11555145

申请日：2006-10-31

申请人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai ,  You Wang ,  Jie Diao ,  Renhe Jia ,  Lakshmanan Karuppiah ,  Robert Ewald

发明人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai ,  You Wang ,  Jie Diao ,  Renhe Jia ,  Lakshmanan Karuppiah ,  Robert Ewald

IPC分类号： B23F21/03

CPC分类号： B24B37/046 ,  B24B27/0023 ,  B24B37/24 ,  B24B37/26 ,  B24D3/34 ,  B82Y30/00

摘要： An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

摘要翻译： 提供了一种用于处理基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括具有至少部分导电的抛光表面的主体的抛光制品。 电极设置在其间具有介电材料的抛光表面下方。 可以在抛光表面和电介质材料中形成多个孔，以至少部分地将电极暴露于抛光表面。 可以在电极和抛光表面之间设置膜，其可透过离子和电流，以促进电极和抛光表面之间的连续性。

公开(公告)号：US20060249394A1

公开(公告)日：2006-11-09

申请号：US11251630

申请日：2005-10-14

申请人： Renhe Jia ,  You Wang ,  Zhihong Wang ,  Jie Diao ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  You Wang ,  Zhihong Wang ,  Jie Diao ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： C09K13/00 ,  B23H9/00 ,  C25F3/00 ,  C09K13/06

CPC分类号： C25F3/02 ,  B23H5/08 ,  C09K3/1463

摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除 导电材料层。

公开(公告)号：US20060196778A1

公开(公告)日：2006-09-07

申请号：US11342179

申请日：2006-01-27

申请人： Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Huyen Tran ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  Zhihong Wang ,  Yuan Tian ,  Huyen Tran ,  Daxin Mao ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： B23H9/00 ,  C25D17/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/08

摘要： Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.

摘要翻译： 提供钨的抛光方法。 在ECMP期间，增加焊盘的电压并不总是足以提高抛光速率。 抛光钨时，简单地增加施加的电压将在某些情况下实际上降低去除率。 通过增加抛光垫和基板之间的下压力，施加电压以及基板和抛光垫的旋转速度，钨去除率也将增加。

公开(公告)号：US20070161250A1

公开(公告)日：2007-07-12

申请号：US11328958

申请日：2006-01-09

申请人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu

发明人： You Wang ,  Zhihong Wang ,  Renhe Jia ,  Stan Tsai ,  Yongqi Hu

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/7684 ,  B23H5/08 ,  H01L21/32125

摘要： Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.

摘要翻译： 本发明的方面包括可以通过改变衬底处理系统中的衬底电位来减少凹陷并提高材料层残留物（例如铜残留物）的清洁效率的方法和装置。 例如，通过利用多个抛光步骤和施加不同的电压（例如，当衬底处于抛光站中时），ECMP可以用于有效地减少凹陷，并且可以用于增强铜残留清洁以及最小化可能性 当抛光工位移动基板时，可能在抛光过程结束时发生电弧。

公开(公告)号：US20060249395A1

公开(公告)日：2006-11-09

申请号：US11389867

申请日：2006-03-27

申请人： You Wang ,  Junzi Zhao ,  Jie Diao ,  Renhe Jia ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Robert Ewald

发明人： You Wang ,  Junzi Zhao ,  Jie Diao ,  Renhe Jia ,  Stan Tsai ,  Lakshmanan Karuppiah ,  Robert Ewald

IPC分类号： C09K13/00 ,  B23H9/00 ,  B23H3/00

CPC分类号： C09K3/1463 ,  B23H5/08

摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a leveler a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，整理剂，溶剂， 并且pH在约3至约10之间。该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及 去除导电材料层。

公开(公告)号：US07879255B2

公开(公告)日：2011-02-01

申请号：US11556593

申请日：2006-11-03

申请人： Huyen Karen Tran ,  Renhe Jia ,  You Wang ,  Stan D. Tsai ,  Martin S. Wohlert ,  Daxin Mao

发明人： Huyen Karen Tran ,  Renhe Jia ,  You Wang ,  Stan D. Tsai ,  Martin S. Wohlert ,  Daxin Mao

IPC分类号： C09K13/00

CPC分类号： B23H5/08

摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conductive material disposed on the barrier material in an amount sufficient to fill feature definitions; polishing the substrate to substantially remove the bulk conductive material; polishing a residual conductive material to expose feature definitions, comprising: applying a first voltage for a first time period, wherein the first voltage is less than the critical voltage; and applying a second voltage for a second time period, wherein the second voltage is greater than the critical voltage.

摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料的方法。 该方法包括提供包括介电特征定义的基底，设置在特征定义中的阻挡材料和以足以填充特征定义的量设置在阻挡材料上的体导电材料; 抛光衬底以基本上去除体导电材料; 抛光残余导电材料以暴露特征定义，包括：施加第一电压第一时间段，其中所述第一电压小于所述临界电压; 以及施加第二时间段的第二电压，其中所述第二电压大于所述临界电压。