公开(公告)号：US20160033588A1

公开(公告)日：2016-02-04

申请号：US14819320

申请日：2015-08-05

申请人： Jason Chilcote ,  Richard Alan Davis

发明人： Jason Chilcote ,  Richard Alan Davis

IPC分类号： G01R33/09 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC分类号： G01R33/09 ,  G01R33/0052 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings. The magneto-resistive material resides directly above the underlying circuitry.

摘要翻译： 装置和相关方法可以涉及磁阻检测装置（MRSD）。 根据示例性实施例，MRSD包括底层半导体器件和磁阻传感器。 在一些示例性实施例中，半导体器件通过大部分标准工艺流程进行处理。 在标准工艺流程之后，在各种实施例中，可以执行平面化步骤以创建更平坦的顶表面。 在一些实施例中，可以由镍 - 铁合金制成的称为坡莫合金的磁阻材料沉积在平面上。 互连金属化层也可以驻留在该顶部区域中。 磁阻材料可以通过平坦化表面中的接触开口接触半导体器件的最上层的金属化层。 在一些实施例中，磁阻材料可以类似地通过这些接触开口接触最上层的金属化层。 磁阻材料直接位于底层电路的上方。

公开(公告)号：US09134385B2

公开(公告)日：2015-09-15

申请号：US13890462

申请日：2013-05-09

申请人： Jason Chilcote ,  Richard Alan Davis

发明人： Jason Chilcote ,  Richard Alan Davis

IPC分类号： H01L27/22 ,  G01R33/09 ,  G01R33/00

CPC分类号： G01R33/09 ,  G01R33/0052 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings. The magneto-resistive material resides directly above the underlying circuitry.

摘要翻译： 装置和相关方法可以涉及磁阻检测装置（MRSD）。 根据示例性实施例，MRSD包括底层半导体器件和磁阻传感器。 在一些示例性实施例中，半导体器件通过大部分标准工艺流程进行处理。 在标准工艺流程之后，在各种实施例中，可以执行平面化步骤以创建更平坦的顶表面。 在一些实施例中，可以由镍 - 铁合金制成的称为坡莫合金的磁阻材料沉积在平面上。 互连金属化层也可以驻留在该顶部区域中。 磁阻材料可以通过平坦化表面中的接触开口接触半导体器件的最上层的金属化层。 在一些实施例中，磁阻材料可以类似地通过这些接触开口接触最上层的金属化层。 磁阻材料直接位于底层电路的上方。

公开(公告)号：US20100212434A1

公开(公告)日：2010-08-26

申请号：US12779657

申请日：2010-05-13

申请人： Gilberto Morales ,  Carl Stewart ,  Scott Edward Beck ,  Richard Alan Davis

发明人： Gilberto Morales ,  Carl Stewart ,  Scott Edward Beck ,  Richard Alan Davis

IPC分类号： G01L7/00 ,  H05K13/00

CPC分类号： G01L19/0023 ,  G01F1/363 ,  G01F1/48 ,  Y10T29/49002 ,  Y10T29/49826

摘要： A flow sensor apparatus that utilizes a pressure sensor with media isolated electrical connections. A cap can be attached to topside of the pressure sensor over a diaphragm to protect bond pads and wire bonds from a fluid media. A flow channel can be etched on the cap with an opening and exit on the sides of the cap so that liquid can flow through the flow channel. An inlet port and an outlet port can be attached to the channel's opening and exit to allow for fluid flow over the diaphragm. The flow channel creates a larger pressure over portions of the diaphragm that increases the deflection of the diaphragm, which increases an output signal of the pressure sensor. V-grooves can be created on two sides of the pressure sensor and in the cap to create the channel for the fluid in and out of the cap's cavity.

公开(公告)号：US20100122580A1

公开(公告)日：2010-05-20

申请号：US12273912

申请日：2008-11-19

申请人： Gilberto Morales ,  Carl Stewart ,  Scott Edward Beck ,  Richard Alan Davis

发明人： Gilberto Morales ,  Carl Stewart ,  Scott Edward Beck ,  Richard Alan Davis

IPC分类号： G01L7/00

CPC分类号： G01L19/0023 ,  G01F1/363 ,  G01F1/48 ,  Y10T29/49002 ,  Y10T29/49826

摘要： A flow sensor apparatus that utilizes a pressure sensor with media isolated electrical connections. A cap can be attached to topside of the pressure sensor over a diaphragm to protect bond pads and wire bonds from a fluid media. A flow channel can be etched on the cap with an opening and exit on the sides of the cap so that liquid can flow through the flow channel. An inlet port and an outlet port can be attached to the channel's opening and exit to allow for fluid flow over the diaphragm. The flow channel creates a larger pressure over portions of the diaphragm that increases the deflection of the diaphragm, which increases an output signal of the pressure sensor. V-grooves can be created on two sides of the pressure sensor and in the cap to create the channel for the fluid in and out of the cap's cavity.

摘要翻译： 一种使用具有介质隔离电气连接的压力传感器的流量传感器装置。 盖可以通过隔膜连接到压力传感器的顶部，以保护接合垫和引线接合与流体介质。 可以在盖上蚀刻流动通道，其开口和出口在盖的侧面上，使得液体可以流过流动通道。 入口和出口可以连接到通道的开口和出口，以允许流体流过隔膜。 流动通道在膜片的部分上产生较大的压力，这增加了膜片的偏转，这增加了压力传感器的输出信号。 可以在压力传感器和盖子的两侧上形成V形槽，以形成流体进出盖体腔体的通道。

公开(公告)号：US20090005651A1

公开(公告)日：2009-01-01

申请号：US11823177

申请日：2007-06-27

申请人： Suzanne Marie Ward ,  Richard Alan Davis ,  Peter Michael Galen

发明人： Suzanne Marie Ward ,  Richard Alan Davis ,  Peter Michael Galen

IPC分类号： A61B5/00

CPC分类号： A61B5/00 ,  A61B5/0002 ,  A61B5/021 ,  A61B5/024 ,  A61B5/145 ,  A61B5/742 ,  A61B5/7445 ,  A61B5/7475 ,  A61B2560/0456

摘要： A portable monitor device includes an integral display to act portably to display various information, the portable monitor device being configured for placement selectively in a docking station. In the docking station, the monitor device automatically provides information relative to at least one larger, external display device, and the display of the monitor device can be used as a user interface in conjunction with the operation of various display and system related functions.

摘要翻译： 便携式监视器装置包括整体显示器，用于可移动地行动以显示各种信息，该便携式监视器装置被配置用于选择性地放置在坞站中。 在对接站中，监视器装置自动提供相对于至少一个较大的外部显示装置的信息，并且监视器装置的显示可以结合各种显示和系统相关功能的操作而用作用户界面。

公开(公告)号：US20140332917A1

公开(公告)日：2014-11-13

申请号：US13890462

申请日：2013-05-09

申请人： Jason Chilcote ,  Richard Alan Davis

发明人： Jason Chilcote ,  Richard Alan Davis

IPC分类号： G01R33/09

CPC分类号： G01R33/09 ,  G01R33/0052 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings. The magneto-resistive material resides directly above the underlying circuitry.

摘要翻译： 装置和相关方法可以涉及磁阻检测装置（MRSD）。 根据示例性实施例，MRSD包括底层半导体器件和磁阻传感器。 在一些示例性实施例中，半导体器件通过大部分标准工艺流程进行处理。 在标准工艺流程之后，在各种实施例中，可以执行平面化步骤以创建更平坦的顶表面。 在一些实施例中，可以由镍 - 铁合金制成的称为坡莫合金的磁阻材料沉积在平面上。 互连金属化层也可以驻留在该顶部区域中。 磁阻材料可以通过平坦化表面中的接触开口接触半导体器件的最上层的金属化层。 在一些实施例中，磁阻材料可以类似地通过这些接触开口接触最上层的金属化层。 磁阻材料直接位于底层电路的上方。

公开(公告)号：US08297125B2

公开(公告)日：2012-10-30

申请号：US12126494

申请日：2008-05-23

申请人： Carl Stewart ,  Richard Alan Davis ,  Gilberto Morales

发明人： Carl Stewart ,  Richard Alan Davis ,  Gilberto Morales

IPC分类号： G01L13/02 ,  G01L15/00

CPC分类号： G01L9/0054 ,  G01L19/0038 ,  G01L19/147

摘要： A differential pressure sensor includes two pressure ports for allowing media to pass into contact with both the top and bottom sides of the diaphragm. A silicon pressure sensor die can be attached between the pressure ports using die attach materials for sensing a differential pressure between the media to evaluate media differential pressure. A cap with an opening can be placed on topside of a diaphragm formed in the silicon pressure die. The silicon pressure die can include die bond pads that can be electrically connected to the diaphragm to output electrical signals. The cap can seal the die bond pads from the harsh media and route the electrical signals therein. Media can pass through the opening in the cap such that a media path to the top of the diaphragm is not exposed to the die bond pads of the silicon pressure die to ensure long-term sensor reliability.

摘要翻译： 差压传感器包括两个压力端口，用于允许介质与隔膜的顶侧和底侧进行接触。 硅压力传感器模具可以使用管芯附接材料连接在压力端口之间，用于感测介质之间的压差以评估介质压差。 具有开口的盖可以放置在形成在硅压模中的隔膜的上侧。 硅压模可以包括可以与膜片电连接以输出电信号的管芯接合焊盘。 盖可以将密封焊盘从恶劣的介质密封并将电信号传送到其中。 介质可以穿过盖中的开口，使得到隔膜顶部的介质路径不暴露于硅压模的管芯接合焊盘，以确保长期的传感器可靠性。

公开(公告)号：US20090288492A1

公开(公告)日：2009-11-26

申请号：US12126494

申请日：2008-05-23

申请人： Carl Stewart ,  Richard Alan Davis ,  Gilberto Morales

发明人： Carl Stewart ,  Richard Alan Davis ,  Gilberto Morales

IPC分类号： G01L13/00 ,  G01L13/02 ,  G01L13/06

CPC分类号： G01L9/0054 ,  G01L19/0038 ,  G01L19/147

摘要： A differential pressure sensor includes two pressure ports for allowing media to pass into contact with both the top and bottom sides of the diaphragm. A silicon pressure sensor die can be attached between the pressure ports using die attach materials for sensing a differential pressure between the media to evaluate media differential pressure. A cap with an opening can be placed on topside of a diaphragm formed in the silicon pressure die. The silicon pressure die can include die bond pads that can be electrically connected to the diaphragm to output electrical signals. The cap can seal the die bond pads from the harsh media and route the electrical signals therein. Media can pass through the opening in the cap such that a media path to the top of the diaphragm is not exposed to the die bond pads of the silicon pressure die to ensure long-term sensor reliability.

摘要翻译： 差压传感器包括两个压力端口，用于允许介质与隔膜的顶侧和底侧进行接触。 硅压力传感器模具可以使用管芯附接材料连接在压力端口之间，用于感测介质之间的压差以评估介质压差。 具有开口的盖可以放置在形成在硅压模中的隔膜的上侧。 硅压模可以包括可以与膜片电连接以输出电信号的管芯接合焊盘。 盖可以将密封焊盘从恶劣的介质密封并将电信号传送到其中。 介质可以穿过盖中的开口，使得到隔膜顶部的介质路径不暴露于硅压模的管芯接合焊盘，以确保长期的传感器可靠性。

公开(公告)号：US20090237090A1

公开(公告)日：2009-09-24

申请号：US12052535

申请日：2008-03-20

申请人： Yousef Alimi ,  Richard Alan Davis

发明人： Yousef Alimi ,  Richard Alan Davis

IPC分类号： G01R35/00 ,  G01R27/26

CPC分类号： G01N27/121 ,  G01N27/225

摘要： A method and system for adjusting characteristics of a relative humidity sensor in order to achieve a desired value of accuracy is presented. A relative humidity sensor, charge balance circuit include a series of sensing capacitors Cx1, Cx2 comprising of thin porous platinum top plate, a humidity sensitive polyimide dielectric, and two metal bottom plates on a semiconductor substrate; and two fixed oxide capacitances Cref, and C0. Changes in humidity affect the humidity sensitive dielectric thereby causing changes in the sensing capacitive value of the said capacitive circuit. The charge in the sensing capacitor and the fixed capacitor C0 can be controlled separately by adjusting and/or trimming the supply voltage using a voltage trimmer; thereby the slope and offset of the relative humidity sensor circuit can be modified and controlled to particular desired values

摘要翻译： 提出了一种用于调整相对湿度传感器特性以达到所需精度值的方法和系统。 相对湿度传感器，电荷平衡电路包括在半导体衬底上包括薄多孔铂顶板，湿度敏感聚酰亚胺电介质和两个金属底板的一系列感测电容器Cx1，Cx2; 和两个固定的氧化物电容Cref和C0。 湿度的变化影响湿敏电介质，从而引起所述电容电路的感测电容值的变化。 感测电容器和固定电容器C0中的电荷可以通过使用电压调节器调节和/或调整电源电压来分开控制; 从而相对湿度传感器电路的斜率和偏移可以被修改和控制到特定的期望值

公开(公告)号：US06626044B1

公开(公告)日：2003-09-30

申请号：US09677895

申请日：2000-10-03

申请人： Michael J. Haji-Sheikh ,  Richard Alan Davis ,  Mark Robert Plagens ,  Carl Edward Stewart ,  Gilberto Morales

发明人： Michael J. Haji-Sheikh ,  Richard Alan Davis ,  Mark Robert Plagens ,  Carl Edward Stewart ,  Gilberto Morales

IPC分类号： G01L708

CPC分类号： G01L19/0654 ,  G01L19/06

摘要： A sensor having freeze resistant features is disclosed. The sensor includes a sensor die and a buffer member that are assembled for attachment to a process fluid conduit. The buffer member defines an opening in fluid communication with the process fluid. The sensor die has a flexible diaphragm, and a capillary channel establishes fluid communication between the diaphragm area of the sensor die and the opening in the buffer member.

摘要翻译： 公开了一种具有防冻特征的传感器。 传感器包括传感器管芯和缓冲构件，其被组装用于附接到过程流体管道。 缓冲构件限定与过程流体流体连通的开口。 传感器管芯具有柔性隔膜，并且毛细通道在传感器管芯的隔膜区域和缓冲构件的开口之间建立流体连通。