公开(公告)号：US09366697B2

公开(公告)日：2016-06-14

申请号：US13699255

申请日：2011-05-20

申请人： Robert M. Weikle, II ,  Arthur Weston Lichtenberger ,  Nicolas Scott Barker ,  Theodore James Reck ,  Haiyong Xu ,  Lihan Chen

发明人： Robert M. Weikle, II ,  Arthur Weston Lichtenberger ,  Nicolas Scott Barker ,  Theodore James Reck ,  Haiyong Xu ,  Lihan Chen

IPC分类号： G01R1/04 ,  G01R1/067 ,  G01R3/00

CPC分类号： G01R1/0416 ,  G01R1/067 ,  G01R1/06744 ,  G01R3/00

摘要： A micromachining process to fabricate a single chip that simple drops into a supporting structure. The micromachining process provides the ability to create a probe that will interface with integrated circuits, for example, operating at frequencies in the range of about 100 GHz to about 3,000 GHz (3 THz). This approach creates a silicon structure (or other applicable choice of material) that provides mechanical force for probing while supporting the transfer of the high frequency energy between a measurement system and the integrated circuit, individual device or material.

摘要翻译： 一种微加工工艺，用于制造简单落入支撑结构的单芯片。 微加工过程提供了创建与集成电路接口的探针的能力，例如在约100GHz至约3,000GHz（3THz）范围内的频率下工作。 这种方法产生了提供用于探测的机械力的硅结构（或其他可应用的材料选择），同时支持测量系统和集成电路，单独设备或材料之间的高频能量的传递。

公开(公告)号：US20130248713A1

公开(公告)日：2013-09-26

申请号：US13564102

申请日：2012-08-01

申请人： Boris Gelmont ,  Tatiana Globus ,  Robert M. Weikle ,  Arthur Weston Lichtenberger ,  Nathan Swami ,  Ramakrishnan Parthasarathy ,  Alexei Bykhovski

发明人： Boris Gelmont ,  Tatiana Globus ,  Robert M. Weikle ,  Arthur Weston Lichtenberger ,  Nathan Swami ,  Ramakrishnan Parthasarathy ,  Alexei Bykhovski

IPC分类号： G01J3/02

CPC分类号： G01J3/024 ,  G01N21/3563 ,  G01N21/3581 ,  G01N21/4788

摘要： A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

摘要翻译： 用于增强与分子耦合的THz辐射的方法和装置包括以下步骤：在开槽部件的不连续边缘附近沉积测试材料，以及通过将THz辐射透过狭槽来增强THz辐射。 测试材料的分子被已经通过狭缝传输的增强的THz辐射照射，从而产生在THz光谱范围内的EM辐射与所述材料的增加的耦合。 分子可以是生物分子，爆炸物质或生物物种。 开槽构件可以是半导体膜，金属膜，特别是InSb或其层。 THz检测器检测已经通过所述槽和测试材料传输的近场THz辐射。

公开(公告)号：US08525115B1

公开(公告)日：2013-09-03

申请号：US13564102

申请日：2012-08-01

申请人： Boris Gelmont ,  Tatiana Globus ,  Nathan Swami ,  Robert M Weikle ,  Arthur Weston Lichtenberger ,  Ramakrishnan Parthasarathy ,  Alexei Bykhovski

发明人： Boris Gelmont ,  Tatiana Globus ,  Nathan Swami ,  Robert M Weikle ,  Arthur Weston Lichtenberger ,  Ramakrishnan Parthasarathy ,  Alexei Bykhovski

IPC分类号： G01J5/02

CPC分类号： G01J3/024 ,  G01N21/3563 ,  G01N21/3581 ,  G01N21/4788

摘要： A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

摘要翻译： 用于增强与分子耦合的THz辐射的方法和装置包括以下步骤：在开槽部件的不连续边缘附近沉积测试材料，以及通过将THz辐射透过狭槽来增强THz辐射。 测试材料的分子被已经通过狭缝传输的增强的THz辐射照射，从而产生在THz光谱范围内的EM辐射与所述材料的增加的耦合。 分子可以是生物分子，爆炸物质或生物物种。 开槽构件可以是半导体膜，金属膜，特别是InSb或其层。 THz检测器检测已经通过所述槽和测试材料传输的近场THz辐射。

公开(公告)号：US20130106456A1

公开(公告)日：2013-05-02

申请号：US13699255

申请日：2011-05-20

申请人： Robert M. Weikle, II ,  Arthur Weston Lichtenberger ,  Nicolas Scott Barker ,  Theodore James Reck ,  Haiyong Xu ,  Lihan Chen

发明人： Robert M. Weikle, II ,  Arthur Weston Lichtenberger ,  Nicolas Scott Barker ,  Theodore James Reck ,  Haiyong Xu ,  Lihan Chen

IPC分类号： G01R1/04 ,  G01R1/067

CPC分类号： G01R1/0416 ,  G01R1/067 ,  G01R1/06744 ,  G01R3/00

摘要： A micromachining process to fabricate a single chip that simple drops into a supporting structure. The micromachining process provides the ability to create a probe that will interface with integrated circuits, for example, operating at frequencies in the range of about 100 GHz to about 3,000 GHz (3 THz). This approach creates a silicon structure (or other applicable choice of material) that provides mechanical force for probing while supporting the transfer of the high frequency energy between a measurement system and the integrated circuit, individual device or material.

摘要翻译： 一种微加工工艺，用于制造简单落入支撑结构的单芯片。 微加工过程提供了创建与集成电路接口的探针的能力，例如在约100GHz至约3,000GHz（3THz）范围内的频率下工作。 这种方法产生了提供用于探测的机械力的硅结构（或其他可应用的材料选择），同时支持测量系统和集成电路，单独设备或材料之间的高频能量的传递。

公开(公告)号：US08309930B2

公开(公告)日：2012-11-13

申请号：US12530304

申请日：2008-03-05

申请人： Boris Gelmont ,  Tatiana Globus ,  Robert M Weikle ,  Arthur Weston Linchtenberger ,  Nathan Swami ,  Ramakrishnan Parthasarthy ,  Alexei Bykhovski

发明人： Boris Gelmont ,  Tatiana Globus ,  Robert M Weikle ,  Arthur Weston Linchtenberger ,  Nathan Swami ,  Ramakrishnan Parthasarthy ,  Alexei Bykhovski

IPC分类号： G01J5/02

CPC分类号： G01J3/024 ,  G01N21/3563 ,  G01N21/3581 ,  G01N21/4788

摘要： A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

摘要翻译： 用于增强与分子耦合的THz辐射的方法和装置包括以下步骤：在开槽部件的不连续边缘附近沉积测试材料，以及通过将THz辐射透过狭槽来增强THz辐射。 测试材料的分子被已经通过狭缝传输的增强的THz辐射照射，从而产生在THz光谱范围内的EM辐射与所述材料的增加的耦合。 分子可以是生物分子，爆炸物质或生物物种。 开槽构件可以是半导体膜，金属膜，特别是InSb或其层。 THz检测器检测已经通过所述槽和测试材料传输的近场THz辐射。

公开(公告)号：US06323818B1

公开(公告)日：2001-11-27

申请号：US09381744

申请日：2000-04-06

申请人： Philip J. Koh ,  Thomas W. Crowe ,  William L. Bishop, Jr. ,  Jeffrey L. Hesler ,  Robert M. Weikle ,  Chris Mann ,  David Matheson

发明人： Philip J. Koh ,  Thomas W. Crowe ,  William L. Bishop, Jr. ,  Jeffrey L. Hesler ,  Robert M. Weikle ,  Chris Mann ,  David Matheson

IPC分类号： H01Q138

CPC分类号： H01Q1/38 ,  H01P11/002 ,  H01Q13/0283

摘要： A millimeter or submillimeter wavelength device including a substrate (2) having a horn shaped cavity (18), and first and second extension layers formed on a top surface of the substrate adjacent to the horn shaped cavity. The first and second extension layers define additional opposed sides of the horn shaped cavity, channels, and walls of the waveguide. Internal surfaces of the horn shaped cavity, the channels, and the waveguide walls include a conductive layer. Two such structures, which are mirror images of each other, are joined to form a horn antenna with integrated channels and a waveguide. The device is fabricated by forming a resist layer on a substrate which includes a horn shaped cavity. The resist layer is etched to form a half horn antenna, channels and walls of a waveguide. Internal surfaces of the half horn antenna, the channels, and the walls of the waveguide are then metalized. Two such metalized structures are then joined to form a full horn antenna integrated with channels and a waveguide.

摘要翻译： 包括具有喇叭形空腔（18）的基板（2）的毫米波或亚毫米波长装置，以及形成在与喇叭形空腔相邻的基板顶表面上的第一和第二延伸层。 第一和第二延伸层限定波导的角形腔，通道和壁的另外的相对侧。 喇叭形腔，通道和波导壁的内表面包括导电层。 两个这样的结构，它们是彼此的镜像，被连接以形成具有集成通道和波导的喇叭天线。 该器件通过在包括喇叭形腔的衬底上形成抗蚀剂层来制造。 蚀刻抗蚀剂层以形成半喇叭天线，波导的通道和壁。 然后将半喇叭天线，通道和波导壁的内表面金属化。 然后连接两个这样的金属化结构以形成与通道和波导集成的完整喇叭天线。

公开(公告)号：US06404402B1

公开(公告)日：2002-06-11

申请号：US09381746

申请日：2000-04-06

申请人： Philip J. Koh ,  Thomas W. Crowe ,  Jeffrey L. Hesler ,  Perry Wood ,  William L. Bishop, Jr. ,  Robert M. Weikle

发明人： Philip J. Koh ,  Thomas W. Crowe ,  Jeffrey L. Hesler ,  Perry Wood ,  William L. Bishop, Jr. ,  Robert M. Weikle

IPC分类号： H01Q1300

CPC分类号： B81C1/00404 ,  H01Q13/0283

摘要： A horn antenna including first and second substrates having at least one first and at least one second horn shaped cavity formed in the first and second substrates, respectively. The horn shaped cavities taper from a narrow end and have a longitudinal axis along a plane parallel to a top surface of the first and second substrates. The second horn shaped cavity is disposed opposite the first horn shaped cavity and is a mirror image of the first horn shaped cavity. Internal surfaces of the first and second horn shaped cavities include a metalization layer. The horn antenna is fabricated by forming at least one mask having a longitudinally extending mask opening on the first and second substrates and preferentially etching the first and second substrate through the mask opening to form the first and second horn shaped cavities. A final shape of the first and second cavities is determined by the shape of the mask opening and the etching time which may be less than the time required to etch the first and second substrates to completion depending on the desired shape of the horn aperture.

摘要翻译： 喇叭天线包括分别形成在第一和第二基板中的至少一个第一和至少一个第二喇叭形空腔的第一和第二基板。 喇叭状空腔从窄端逐渐变细，并且沿着平行于第一和第二基板的顶表面的平面具有纵向轴线。 第二喇叭形空腔与第一喇叭形空腔相对设置，并且是第一喇叭形空腔的镜像。 第一和第二喇叭形空腔的内表面包括金属化层。 喇叭天线通过在第一和第二基板上形成具有纵向延伸的掩模开口的至少一个掩模来制造，并且优选地通过掩模开口蚀刻第一和第二基板以形成第一和第二喇叭形空腔。 第一和第二空腔的最终形状由掩模开口的形状和蚀刻时间决定，该蚀刻时间可能小于根据喇叭孔的期望形状来蚀刻第一和第二基底至完成所需的时间。