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公开(公告)号：US06188124B1
公开(公告)日：2001-02-13
申请号：US09354374
申请日：1999-07-14
IPC分类号： H01L23544
CPC分类号： H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor arrangement having a first active region and a dummy region on a surface of a substrate. The first active region and the dummy region are spaced from one another without any contact, and the dummy region is closer to an edge of the surface of the substrate in comparison to the first active region. Formed on the dummy region, first active region, and a portion of the substrate surface is a dielectric layer. The surface of the dielectric layer has an inactive portion and an active portion. A mask is disposed on the dielectric layer such that the mask contacts the inactive portion and does not contact the active portion.
摘要翻译： 一种在衬底表面上具有第一有源区和虚拟区的半导体装置。 与第一有源区域相比，第一有源区域和虚设区域彼此间隔开而没有任何接触，并且虚设区域更靠近衬底的表面的边缘。 在虚拟区域上形成第一有源区，并且衬底表面的一部分是电介质层。 电介质层的表面具有非活性部分和活性部分。 掩模设置在电介质层上，使得掩模接触非活性部分并且不接触有源部分。
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2.发明授权
公开(公告)号：US5421723A
公开(公告)日：1995-06-06
申请号：US218105
申请日：1994-03-25
IPC分类号： F27D15/02 , F27D19/00 , H01L21/00 , H01L21/677
CPC分类号： H01L21/6776 , F27D15/0266 , F27D19/00 , H01L21/67109
摘要： This invention relates generally to a belt type furnace. More specifically, this invention relates to a belt type furnace that sequentially stops the belt at the vicinity of at least one cooling unit, and where the cooling unit comprises at least two cooling elements. The furnace also allows the cooling of parts in such a way that the part cools uniformly.
摘要翻译： 本发明一般涉及带式炉。 更具体地，本发明涉及一种在至少一个冷却单元附近顺序地停止带的带式炉，其中冷却单元包括至少两个冷却元件。 炉子还允许部件冷却，使部件均匀地冷却。
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3.发明申请SLIP RING POSITIVE Z FORCE LIQUID ISOLATION FIXTURE PERMITTING ZERO NET FORCE ON WORKPIECE 有权SLIP RING POSITIVE Z力液体隔离装置允许零工作在工作中公开(公告)号：US20090084183A1
公开(公告)日：2009-04-02
申请号：US11862540
申请日：2007-09-27
CPC分类号： G01N29/28 , G01N29/069 , G01N2291/2697
摘要： Apparatus for Scanning Acoustic Microscopy (SAM) of a semiconductor device including a substrate with an acoustic probe, The substrate has upper and lower surfaces. A sealed lower space provides an environment surrounding the lower surface. An upper ring structure formed above the upper surface includes an upper sealing ring in contact with the upper surface, with the upper sealing structure and the seal forming a dam for retaining the acoustic transmission fluid above the upper surface. A fixture base retains a lower sealing ring in contact with the lower surface surrounding the lower surface. An acoustic scanning probe positioned confronting the upper surface of the semiconductor device extending into the acoustic transmission fluid retained in contact with the upper surface.
摘要翻译： 用于扫描包括具有声探针的基底的半导体器件的声学显微镜（SAM）的装置。该衬底具有上表面和下表面。 密封的较低空间提供围绕下表面的环境。 形成在上表面上方的上环结构包括与上表面接触的上密封环，上密封结构和密封件形成用于将声传播流体保持在上表面上方的坝。 固定基座保持与围绕下表面的下表面接触的下密封环。 声学扫描探针定位成面对半导体器件的上表面延伸到保持与上表面接触的声传播流体中。
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4.发明授权Slip ring positive Z force liquid isolation fixture permitting zero net force on workpiece 有权滑环正Z力液体隔离夹具允许工件上的零净力公开(公告)号：US07823452B2
公开(公告)日：2010-11-02
申请号：US11862540
申请日：2007-09-27
IPC分类号： G01N29/04
CPC分类号： G01N29/28 , G01N29/069 , G01N2291/2697
摘要： Apparatus for Scanning Acoustic Microscopy (SAM) of a semiconductor device including a substrate with an acoustic probe, The substrate has upper and lower surfaces. A sealed lower space provides an environment surrounding the lower surface. An upper ring structure formed above the upper surface includes an upper sealing ring in contact with the upper surface, with the upper sealing structure and the seal forming a dam for retaining the acoustic transmission fluid above the upper surface. A fixture base retains a lower sealing ring in contact with the lower surface surrounding the lower surface. An acoustic scanning probe positioned confronting the upper surface of the semiconductor device extending into the acoustic transmission fluid retained in contact with the upper surface.
摘要翻译： 用于扫描包括具有声探针的基底的半导体器件的声学显微镜（SAM）的装置。该衬底具有上表面和下表面。 密封的较低空间提供围绕下表面的环境。 形成在上表面上方的上环结构包括与上表面接触的上密封环，上密封结构和密封件形成用于将声传播流体保持在上表面上方的坝。 固定基座保持与围绕下表面的下表面接触的下密封环。 声学扫描探针定位成面对半导体器件的上表面延伸到保持与上表面接触的声传播流体中。
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公开(公告)号：US06957622B2
公开(公告)日：2005-10-25
申请号：US10773605
申请日：2004-02-05
CPC分类号： G01N3/56 , G01N2033/0095
摘要： An in-situ wear indicator for detecting wear to at least one selected part in a semiconductor manufacturing environment. The indicator is manufactured in a selected material with a selected thickness so that the indicator degrades upon exposure to the semiconductor manufacturing process at a fixed rate relative to the wear of the selected part. The indicator displays a visual indication of wear which is discernible by an automated detection device.
摘要翻译： 一种用于在半导体制造环境中检测对至少一个选定部件的磨损的原位磨损指示器。 该指示器以所选择的厚度制成所选择的材料，使得指示剂以暴露于半导体制造工艺的相对于所选择的部件的磨损的固定速率降低。 该指示器显示可由自动检测装置识别的磨损的视觉指示。
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