公开(公告)号：US20080126245A1

公开(公告)日：2008-05-29

申请号：US11563779

申请日：2006-11-28

申请人： Robert Rosenberg

发明人： Robert Rosenberg

IPC分类号： G06Q40/00

CPC分类号： G06Q40/02 ,  G06Q20/10 ,  G06Q40/00

摘要： A system and method is disclosed for providing personal financial services at a single branch location for customers having accounts at a plurality of private financial institutions. First and second customer provide information representing their respective private financial accounts. The accounts may be held at different institutions. The branch location provides personal financial services to enable the first customer and the second customer to conduct transactions for their respective accounts. Preferably, a network of branches locations are provided that are each operable to provide personal bank services for a plurality of accounts held at a plurality of private financial institutions.

摘要翻译： 公开了一种系统和方法，用于在单个分支位置为在多个私人金融机构的账户的客户提供个人金融服务。 第一和第二客户提供代表其各自私人财务账户的信息。 账目可能在不同的机构举行。 分行位置提供个人金融服务，使第一客户和第二客户能够为其各自的账户进行交易。 优选地，提供分支网络的位置，每个分支位置可操作以为在多个私人金融机构持有的多个账户提供个人银行服务。

公开(公告)号：US20050086142A1

公开(公告)日：2005-04-21

申请号：US10684702

申请日：2003-10-15

申请人： Jeffrey Geller ,  Robert Rosenberg ,  Richard O'Connell ,  Paul Schack

发明人： Jeffrey Geller ,  Robert Rosenberg ,  Richard O'Connell ,  Paul Schack

IPC分类号： G06Q99/00 ,  G06F17/60

CPC分类号： G06Q99/00 ,  G06Q40/00

摘要： Methods are provided for lease guaranty services. A landlord enters into an arrangement with a lease guaranty service provider including an agreed upon lease guaranty policy to cover a rental property associated with the landlord. Under the lease guaranty policy, the landlord is a beneficiary and is bound to some contractual duties. A tenant, interested in renting the rental property, enters into a lease guaranty participation agreement with the lease guaranty service provider, which provides that the lease guaranty service provider pays the landlord a claim amount, resulted from the tenant's failure to comply with a lease signed between the tenant and the landlord for the rental property, and the tenant is legally liable to the lease guaranty service provider.

摘要翻译： 为租赁担保服务提供方法。 业主与租赁担保服务商订立协议，包括商定的租赁担保政策，以支付与业主相关的租赁物业。 根据租赁担保政策，业主是受益人，必须履行合同义务。 有租赁租赁租赁的租户与租赁担保服务提供商订立租赁担保参与协议，规定租赁担保服务商向房东支付索赔金额，这是由于租客未能遵守租赁合同 租户和房东之间出租房屋，租客对租赁担保服务商负有法律责任。

公开(公告)号：US06831364B2

公开(公告)日：2004-12-14

申请号：US10210173

申请日：2002-08-01

申请人： Timothy Joseph Dalton ,  Stephen Edward Greco ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Kenneth Parker Rodbell ,  Robert Rosenberg

发明人： Timothy Joseph Dalton ,  Stephen Edward Greco ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Kenneth Parker Rodbell ,  Robert Rosenberg

IPC分类号： H01L2352

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76828 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.

摘要翻译： 公开了一种在电子结构中形成多孔介电材料层的方法和形成的结构。 在该方法中，半导体器件中的多孔电介质层可以通过首先形成无孔介电层，然后通过反应离子蚀刻进行部分固化，图案化，并且在比无孔介电层更高的温度下最终固化无孔介电层 部分固化温度以将无孔电介质材料转变为多孔电介质材料，从而形成具有低介电常数（即小于2.6）的电介质材料。 无孔介电材料可以通过将热稳定的介电材料如甲基倍半硅氧烷，氢倍半硅氧烷，苯并环丁烯或芳族热固性聚合物与其中的第二相聚合物材料嵌入而形成，使得在较高固化温度下，第二相聚合物材料 基本上挥发以在形成空隙填充的电介质材料之后留下空隙。

公开(公告)号：USD476726S1

公开(公告)日：2003-07-01

申请号：US29160516

申请日：2002-05-13

申请人： Robert Rosenberg

设计人： Robert Rosenberg

公开(公告)号：US06525427B2

公开(公告)日：2003-02-25

申请号：US10055704

申请日：2002-01-22

申请人： Peter Richard Duncombe ,  Daniel Charles Edelstein ,  Robert Benjamin Laibowitz ,  Deborah Ann Neumayer ,  Tak Hung Ning ,  Robert Rosenberg ,  Thomas Mcarraoll Shaw

发明人： Peter Richard Duncombe ,  Daniel Charles Edelstein ,  Robert Benjamin Laibowitz ,  Deborah Ann Neumayer ,  Tak Hung Ning ,  Robert Rosenberg ,  Thomas Mcarraoll Shaw

IPC分类号： H01L2348

CPC分类号： H01L28/55 ,  H01L21/31691 ,  H01L23/5223 ,  H01L23/5329 ,  H01L23/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

公开(公告)号：US06452276B1

公开(公告)日：2002-09-17

申请号：US09070394

申请日：1998-04-30

申请人： Stephan A. Cohen ,  Fenton R. McFeely ,  Cevdet I. Noyan ,  Kenneth P. Rodbell ,  John J. Yurkas ,  Robert Rosenberg

发明人： Stephan A. Cohen ,  Fenton R. McFeely ,  Cevdet I. Noyan ,  Kenneth P. Rodbell ,  John J. Yurkas ,  Robert Rosenberg

IPC分类号： H01L2348

CPC分类号： H01L21/7687 ,  H01L21/76843 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.

公开(公告)号：US06451712B1

公开(公告)日：2002-09-17

申请号：US09739935

申请日：2000-12-18

申请人： Timothy Joseph Dalton ,  Stephen Edward Greco ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Kenneth Parker Rodbell ,  Robert Rosenberg

发明人： Timothy Joseph Dalton ,  Stephen Edward Greco ,  Jeffrey Curtis Hedrick ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Kenneth Parker Rodbell ,  Robert Rosenberg

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76828 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus achieving a dielectric material that has significantly improved dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.

摘要翻译： 公开了一种在电子结构中形成多孔介电材料层的方法和形成的结构。 在该方法中，半导体器件中的多孔电介质层可以通过首先形成无孔介电层，然后通过反应离子蚀刻进行部分固化，图案化，并且在比无孔介电层更高的温度下最终固化无孔介电层 部分固化温度以将无孔电介质材料转化为多孔电介质材料，从而获得具有显着改善介电常数（即小于2.6）的电介质材料。 无孔介电材料可以通过将热稳定的介电材料如甲基倍半硅氧烷，氢倍半硅氧烷，苯并环丁烯或芳族热固性聚合物与其中的第二相聚合物材料嵌入而形成，使得在较高的固化温度下，第二相聚合物材料 基本上挥发以在形成空隙填充的电介质材料之后留下空隙。

公开(公告)号：US5540785A

公开(公告)日：1996-07-30

申请号：US223098

申请日：1994-04-04

申请人： Robert H. Dennard ,  Bernard S. Meyerson ,  Robert Rosenberg

发明人： Robert H. Dennard ,  Bernard S. Meyerson ,  Robert Rosenberg

IPC分类号： H01L27/12 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/762 ,  H01L29/30

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S438/97 ,  Y10S438/977

摘要： A method for fabricating silicon on insulator structures having a dislocation free silicon layer. The method utilizes low temperature UHVCVD to deposit a very heavily doped etch stop layer having a very steep doping profile onto a substrate and a lightly doped active layer onto the etch stop layer. An insulator is formed on the active layer and a carrier wafer is formed on the insulator layer. The original substrate is removed in a first etch and the etch stop layer is removed in a second etch resulting in a thin, uniform active layer. In one embodiment, a small percentage of germanium is added to the etch stop layer to produce a defect free epitaxial active layer.

摘要翻译： 一种用于制造具有无位错硅层的绝缘体上硅结构的方法。 该方法利用低温UHVCVD将具有非常陡峭的掺杂分布的非常重的掺杂的蚀刻停止层沉积到衬底上，并将轻掺杂的有源层沉积到蚀刻停止层上。 在有源层上形成绝缘体，在绝缘体层上形成载体晶片。 在第一蚀刻中去除原始衬底，并且在第二蚀刻中去除蚀刻停止层，导致薄的均匀的有源层。 在一个实施例中，将少量的锗添加到蚀刻停止层中以产生无缺陷的外延活性层。

公开(公告)号：US4599277A

公开(公告)日：1986-07-08

申请号：US659158

申请日：1984-10-09

申请人： James M. Brownlow ,  Robert Rosenberg

发明人： James M. Brownlow ,  Robert Rosenberg

IPC分类号： H05K3/46 ,  B22F3/10 ,  B22F7/02 ,  B32B15/04 ,  B32B15/14 ,  C04B35/64 ,  C04B41/51 ,  C04B41/88 ,  H01L21/48 ,  H05K1/09 ,  B22F3/00

CPC分类号： C04B41/009 ,  B22F3/1003 ,  B22F7/02 ,  C04B41/51 ,  C04B41/5127 ,  C04B41/88 ,  H01L21/4867 ,  H05K1/092 ,  H05K3/4629 ,  Y10T428/12028 ,  Y10T428/12049 ,  Y10T428/12056 ,  Y10T428/12063 ,  Y10T428/1266

摘要： In a process for sintering a metal member bonded to a substrate during which the metal member undergoes densification at a temperature which is different from the curing temperature of the substrate, an improvement is provided which comprises causing the densification temperature of the metal member to be closer to or identical with the curing temperature of the substrate by adding to said metal member prior to sintering an amount of organometallic compound which undergoes decomposition before the densification temperature of the metal member has been reached to provide under the sintering conditions employed a densification temperature-modifying amount of a metal or metal oxide which can be the same as or different from the metal of the aforesaid metal member.The improved sintering process of the present invention is particularly adapted for use in the fabrication of multilayer ceramic substrates which serve as circuit modules for seminconductor chips.

摘要翻译： 在将金属构件在与基板的固化温度不同的温度下进行致密化的基板烧结金属构件的烧结方法中，提供了使金属构件的致密化温度更接近的改善 通过在烧结前在金属构件的致密化温度达到达到分解之前将所述金属组分加入到所述金属构件中以在烧结条件下提供致密化温度修饰而与基底的固化温度相同或相同 可以与上述金属构件的金属相同或不同的金属或金属氧化物的量。 本发明的改进的烧结工艺特别适用于制造用作半导体芯片的电路模块的多层陶瓷衬底。

公开(公告)号：US4482906A

公开(公告)日：1984-11-13

申请号：US393951

申请日：1982-06-30

申请人： Harold J. Hovel ,  Robert Rosenberg

发明人： Harold J. Hovel ,  Robert Rosenberg

IPC分类号： H01L29/812 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/12 ,  H01L31/108 ,  H01L31/18 ,  H01L33/00 ,  H01L29/161

CPC分类号： H01L33/0066 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02546 ,  H01L31/108 ,  H01L31/18 ,  H01L31/1844 ,  H01L33/0062 ,  H01L21/0262 ,  Y02E10/544 ,  Y02P70/521

摘要： An integrated circuit structure made up of a monocrystalline substrate on which there is an epitaxial intermediate layer of GaAlAs or GaAlAs and Ge with the Ge adjacent to the substrate. The structure is equipped with a single or a combined device epitaxial layer involving GaAs and GaAlAs. The intermediate GaAlAs layer permits substrate, circuit and optical signal application flexibility.

摘要翻译： 由单晶衬底构成的集成电路结构，其上存在GaAlAs或GaAlAs的外延中间层，Ge与邻近衬底的Ge。 该结构配备有涉及GaAs和GaAlAs的单个或组合器件外延层。 中间GaAlAs层允许衬底，电路和光信号的应用灵活性。