公开(公告)号：US08823012B2

公开(公告)日：2014-09-02

申请号：US13403400

申请日：2012-02-23

申请人： Alexander Lidow ,  Robert Beach ,  Alana Nakata ,  Jianjun Cao ,  Guang Yuan Zhao ,  Robert Strittmatter ,  Fang Chang Liu

发明人： Alexander Lidow ,  Robert Beach ,  Alana Nakata ,  Jianjun Cao ,  Guang Yuan Zhao ,  Robert Strittmatter ,  Fang Chang Liu

IPC分类号： H01L21/48 ,  H01L21/02 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786 ,  H01L33/007

摘要： Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability.

摘要翻译： 具有栅极间隔物，栅极金属材料和自对准的栅极化合物的增强型GaN器件及其形成方法。 使用单个光掩模对材料进行图案化和蚀刻，这降低了制造成本。 栅极间隔物和栅极化合物的界面比电介质膜和栅极化合物的界面具有更低的泄漏，从而减少栅极泄漏。 此外，使用欧姆接触金属层作为场板，以减轻掺杂III-V栅极化合物角向漏极接触的电场，这导致较低的栅极漏电流和改善的栅极可靠性。

公开(公告)号：US08853749B2

公开(公告)日：2014-10-07

申请号：US13362669

申请日：2012-01-31

申请人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

发明人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

IPC分类号： H01L29/76 ,  H01L21/336 ,  H01L29/423 ,  H01L29/778 ,  H01L29/66 ,  H01L21/265 ,  H01L29/20

CPC分类号： H01L21/26586 ,  H01L21/26546 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.

摘要翻译： 一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。 栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。

公开(公告)号：US20120193688A1

公开(公告)日：2012-08-02

申请号：US13362669

申请日：2012-01-31

申请人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

发明人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

IPC分类号： H01L29/768 ,  H01L21/336

CPC分类号： H01L21/26586 ,  H01L21/26546 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.

摘要翻译： 一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。 栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。

公开(公告)号：US20120175631A1

公开(公告)日：2012-07-12

申请号：US13403400

申请日：2012-02-23

申请人： Alexander Lidow ,  Robert Beach ,  Alana Nakata ,  Jianjun Cao ,  Guang Yuan Zhao ,  Robert Strittmatter ,  Fang Chang Liu

发明人： Alexander Lidow ,  Robert Beach ,  Alana Nakata ,  Jianjun Cao ,  Guang Yuan Zhao ,  Robert Strittmatter ,  Fang Chang Liu

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786 ,  H01L33/007

摘要： Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability.

摘要翻译： 具有栅极间隔物，栅极金属材料和自对准的栅极化合物的增强型GaN器件及其形成方法。 使用单个光掩模对材料进行图案化和蚀刻，这降低了制造成本。 栅极间隔物和栅极化合物的界面比电介质膜和栅极化合物的界面具有更低的泄漏，从而减少栅极泄漏。 此外，使用欧姆接触金属层作为场板，以减轻掺杂III-V栅极化合物角向漏极接触的电场，这导致较低的栅极漏电流和改善的栅极可靠性。