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公开(公告)号：US5973444A
公开(公告)日：1999-10-26
申请号：US191269
申请日：1998-11-12
CPC分类号： H01J1/304 , B82Y10/00 , H01J2201/30469 , H01J2201/319 , Y10S977/939
摘要： Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.
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公开(公告)号：US5872422A
公开(公告)日：1999-02-16
申请号：US575485
申请日：1995-12-20
CPC分类号： H01J1/304 , B82Y10/00 , H01J2201/30469 , H01J2201/319 , Y10S977/939
摘要： Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.
摘要翻译： 包含冷阴极的电子场发射器件（冷阴极），真空微电子器件和场发射显示器及其制造和使用方法。 更具体地，包括直接生长在基底材料上的电子发射结构的冷阴极器件。 本发明还涉及用于制造场致发射器件的图案化前体衬底及其制造方法，并且还涉及直接在衬底上直接催化生长其它电子结构，例如膜，锥体，圆柱体，金字塔等。
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公开(公告)号：US5741435A
公开(公告)日：1998-04-21
申请号：US512555
申请日：1995-08-08
IPC分类号： G11C11/14 , H01F1/00 , H01F1/03 , B41B27/10 , G11C11/414 , H01L21/8229 , H01L21/8239
CPC分类号： B82Y25/00 , G11C11/14 , H01F1/0063 , H01F1/0306 , Y10S428/90 , Y10T428/12465 , Y10T428/12951
摘要： A static magnetic memory includes a layer having a plurality of vertically oriented and shape-anisotropic elongated ferromagnetic particles. A plurality of writing conductors are adjacent the layer, and the conductors selectively apply magnetic fields to selected regions of the layer by directing electrical current to magnetize the particles in an up or down direction. Static reading means detect the direction of magnetization. The particles may include a soft magnet portion and a hard magnet portion. In another preferred embodiment, a material and a method of making same includes providing a matrix full of elongated holes, depositing a first magnetic material having a first coercivity into the holes, and then depositing a second magnetic material having a second coercivity into the holes to form a composite elongated particle in each hole.
摘要翻译： 静磁存储器包括具有多个垂直取向和形状各向异性的细长铁磁颗粒的层。 多个写入导体与层相邻，并且导体通过引导电流在上或下方向上磁化颗粒而选择性地将磁场施加到层的选定区域。 静态读数意味着检测磁化方向。 颗粒可以包括软磁体部分和硬磁体部分。 在另一优选实施例中，材料及其制造方法包括提供充满细长孔的矩阵，将具有第一矫顽力的第一磁性材料沉积到孔中，然后将具有第二矫顽力的第二磁性材料沉积到孔中 在每个孔中形成复合细长颗粒。
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公开(公告)号：US5989406A
公开(公告)日：1999-11-23
申请号：US953019
申请日：1997-10-17
CPC分类号： B82Y25/00 , G11C11/14 , H01F1/0063 , H01F1/0306 , Y10S428/90 , Y10T428/12465 , Y10T428/12951
摘要： A magnetically shape-anisotropic material is made by providing a matrix with a plurality of elongated holes, and depositing first and second magnetic materials in each hole so as to form elongated particles including the first material adjacent one end and the second material adjacent the opposite end. One of the materials is a magnetically soft material having relatively low coercivity whereas the other material is a magnetically hard material having relatively high coercivity. The particles have dimensions transverse to their axes of elongation smaller than the magnetic domain size of the magnetically soft material.
摘要翻译： 磁性形状各向异性材料通过提供具有多个细长孔的矩阵而制成，并且在每个孔中沉积第一和第二磁性材料，以便形成细长的颗粒，其包括邻近一端的第一材料和邻近相对端的第二材料 。 其中一种材料是具有较低矫顽力的磁软材料，而另一种材料是具有较高矫顽力的磁性硬质材料。 颗粒具有横向于其伸长轴线的尺寸小于磁性软材料的磁畴尺寸。
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5.发明授权Process for producing macroscopic cavities beneath the surface of a silicon wafer 失效用于在硅晶片表面下方产生宏观空腔的方法公开(公告)号：US06750153B2
公开(公告)日：2004-06-15
申请号：US10001358
申请日：2001-10-24
IPC分类号： H01L21302
CPC分类号： H01L21/3063 , H01L21/308
摘要： A silicon element having macrocavities beneath its exterior surface is fabricated by electrochemical etching of a p-type silicon wafer. Etching at a high current density results in the formation of deep macrocavities overhung by a layer of crystalline silicon. The process works with both aqueous and non-aqueous electrolytes.
摘要翻译： 通过p型硅晶片的电化学蚀刻来制造在其外表面下方具有宏观腔的硅元件。 在高电流密度下进行蚀刻可形成由一层晶体硅覆盖的深宏观形状。 该方法与水性和非水电解质一起使用。
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公开(公告)号：US6045677A
公开(公告)日：2000-04-04
申请号：US807469
申请日：1997-02-27
CPC分类号： H01J9/125 , C25D11/02 , H01J43/246 , C25D11/04 , C25D11/045
摘要： A microchannel plate and method of manufacturing same is provided. The microchannel plate includes a plate consisting of an anodized material and a plurality of channels which are formed during the anodization of the material and extend between the two sides of the plate. Electrodes are also disposed on each side of the plate for generating an electrical field within the channels. Preferably, the material is alumina and the channels are activated such that the channel walls are conductive and highly secondary emissive.
摘要翻译： 提供了一种微通道板及其制造方法。 微通道板包括由阳极氧化材料和在该材料的阳极氧化期间形成并在板的两侧之间延伸的多个通道组成的板。 电极也设置在板的每一侧上，用于在通道内产生电场。 优选地，材料是氧化铝，并且通道被激活，使得通道壁是导电的和高度二次发射的。
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公开(公告)号：US5997713A
公开(公告)日：1999-12-07
申请号：US74712
申请日：1998-05-08
IPC分类号： H01J9/12 , B81B1/00 , B81C1/00 , C25F3/12 , H01J9/02 , H01J43/24 , H01L21/3063 , C25D5/34 , C25D5/48 , C25D9/06
CPC分类号： H01J43/246 , B81B1/004 , B81C1/00166 , B81C1/00595 , C25F3/12 , H01J9/02 , H01L21/3063 , B81C2201/0114 , Y10S977/888
摘要： An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.
摘要翻译： 通过电解质中的p型硅元件的电化学蚀刻来制造具有细长的高纵横比通道的元件，例如微通道板，以形成延伸穿过该元件的通道。 电解质可以是水性电解质。 用作微通道板， 通道的硅表面可以转化为绝缘二氧化硅，并且具有高电子发射率的倍增极材料可以沉积到通道的绝缘表面上。 还公开了新的倍增极材料。
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