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公开(公告)号：US08067949B2
公开(公告)日：2011-11-29
申请号：US12881070
申请日：2010-09-13
IPC分类号： G01R31/10
CPC分类号： H01S5/0021 , G01R31/2849 , G02B6/4246 , H01S5/02248 , H01S5/22
摘要： Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.
摘要翻译： 半导体激光器老化以识别弱或有缺陷的器件，从而提高其余器件的可靠性。 激光器可以使用高功率光学老化来老化，其包括向激光器提供高驱动电流一段时间，并且将激光器的环境温度保持在低温。 在高功率光学老化之后，可以测量激光器的输出，以确定激光器是否在规格范围内运行。 那些不能被丢弃的那些，而那些可以使用高温热老化进一步老化，其包括向激光器提供驱动电流，同时将激光器的环境温度保持在高温。
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公开(公告)号：US5601687A
公开(公告)日：1997-02-11
申请号：US526857
申请日：1995-09-11
申请人： Robert W. Herrick
发明人： Robert W. Herrick
IPC分类号： G02B6/12 , H01L21/762 , H01L21/47
CPC分类号： G02B6/12004 , H01L21/76229 , G02B2006/12173 , G02B2006/12176 , Y10S438/978
摘要： A device and a method to minimize leakage current between adjacent sections of a semiconductor device, while minimizing topographic variations. The device has an etched shape of a diamond, with an unetched "moat" in its center. While any type of etch will work, wet etching is usually used, both for its low cost and its good sidewell smoothness. Prior designs typically have a simple straight line (T-shape) across. The etching has general application to wafer fabrication of opto-electronic devices requiring good electrical isolation, and using self-aligned or planarization processing in later process step which require minimal topographic variations. More generally, the design technique can be applied to any etched semiconductor device where topographic variation needs to be minimized while using wet etching or other crystallographic etches. The novel features include the elimination of any lines along the 011 crystallographic axis (which give retrograde slopes in wet etching) and the use of an "island-to-fill-in" feature, and minimize volume of absorbed resists.
摘要翻译： 使半导体器件的相邻部分之间的漏电流最小化的装置和方法，同时最小化地形变化。 该装置具有金刚石的蚀刻形状，其中心处具有未蚀刻的“护城河”。 虽然任何类型的蚀刻将起作用，但通常使用湿式蚀刻，无论是低成本还是良好的侧面平滑度。 先前的设计通常具有简单的直线（T形）。 该蚀刻一般适用于需要良好电隔离的光电器件的晶片制造，并且在稍后的工艺步骤中使用需要最小的地形变化的自对准或平面化处理。 更一般地，设计技术可以应用于任何蚀刻的半导体器件，其中在使用湿蚀刻或其它晶体刻蚀时需要最小化地形变化。 新颖特征包括消除沿011晶轴的任何线（其在湿蚀刻中产生逆行斜率）以及使用“岛到填充”特征，并使吸收的抗蚀剂的体积最小化。
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3.发明授权Method for measuring and analyzing surface roughness on semiconductor laser etched facets 失效测量和分析半导体激光刻蚀面上表面粗糙度的方法
公开(公告)号：US5460034A
公开(公告)日：1995-10-24
申请号：US917546
申请日：1992-07-21
申请人： Robert W. Herrick
发明人： Robert W. Herrick
CPC分类号： H01J37/222 , B82Y10/00 , G01B15/08 , H01J2237/223 , H01J2237/24578
摘要： A scanning electron microscope is used to scan the etched facet edge to produce digital data representative of its profile. A Fourier transform of the edge profile is produced and the resulting plurality of spatial frequency components can be used to generate a first low frequency waveform component indicative of lack of precise edge definition, a midrange frequency component indicative of poor liftoff samples, and a high frequency component indicative of metal grain size. A tilt adjustment feature of the electron microscope is optionally used to advantageously magnify the shape of the profile in the y direction.
摘要翻译： 扫描电子显微镜用于扫描蚀刻的刻面边缘以产生代表其轮廓的数字数据。 产生边缘轮廓的傅里叶变换，并且所得到的多个空间频率分量可用于产生指示缺少精确边缘定义的第一低频波形分量，指示不良提升样本的中频频率分量，以及高频 表示金属粒度的组分。 任选地使用电子显微镜的倾斜调节特征来有利地沿y方向放大轮廓的形状。
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公开(公告)号：US20110008917A1
公开(公告)日：2011-01-13
申请号：US12881070
申请日：2010-09-13
IPC分类号： H01L21/66
CPC分类号： H01S5/0021 , G01R31/2849 , G02B6/4246 , H01S5/02248 , H01S5/22
摘要： Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.
摘要翻译： 半导体激光器老化以识别弱或有缺陷的器件，从而提高其余器件的可靠性。 激光器可以使用高功率光学老化来老化，其包括向激光器提供高驱动电流一段时间，并且将激光器的环境温度保持在低温。 在高功率光学老化之后，可以测量激光器的输出，以确定激光器是否在规格范围内运行。 那些不能被丢弃的那些，而那些可以使用高温热老化进一步老化，其包括向激光器提供驱动电流，同时将激光器的环境温度保持在高温。
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公开(公告)号：US07795896B2
公开(公告)日：2010-09-14
申请号：US12190914
申请日：2008-08-13
IPC分类号： G01R31/26
CPC分类号： H01S5/0021 , G01R31/2849 , G02B6/4246 , H01S5/02248 , H01S5/22
摘要： Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.
摘要翻译： 半导体激光器老化以识别弱或有缺陷的器件，从而提高其余器件的可靠性。 激光器可以使用高功率光学老化来老化，其包括向激光器提供高驱动电流一段时间，并且将激光器的环境温度保持在低温。 在高功率光学老化之后，可以测量激光器的输出，以确定激光器是否在规格范围内运行。 那些不能被丢弃的那些，而那些可以使用高温热老化进一步老化，其包括向激光器提供驱动电流，同时将激光器的环境温度保持在高温。
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公开(公告)号：US5259925A
公开(公告)日：1993-11-09
申请号：US894479
申请日：1992-06-05
IPC分类号： H01L21/78 , H01S5/02 , H01L21/302 , B44C1/22
CPC分类号： H01S5/0203 , H01L21/78 , H01S5/0202 , H01S5/0207 , Y10S148/028 , Y10S148/131 , Y10S438/978
摘要： A method for cleaving semiconductor devices along planes accurately positioned. Resist is applied to a major surface of the semiconductor device and a mask is projected upon the resist covered major surface. The mask is opaque in those regions in which no cleave is desired. Following the exposure of the resist, the removal of the mask and the development of the resist, an ion beam is positioned incident upon the semiconductor surface such that ion beam etching occurs in the areas in which no resist covers the semiconductor structure. Once a sufficient depth is etched in the areas not covered with resist such that the strength of the semiconductor structure in those areas is significantly less than in those areas covered by resist, the ion beam etching process is ended and the resist is stripped from the semiconductor structure. Subsequently, force is applied within the area in which the ion beam etching occurred to cleave the semiconductor structure within that region. Such cleaving may occur either prior or subsequent to etching of facets for the semiconductor devices.
摘要翻译： 一种沿准确定位的平面切割半导体器件的方法。 抗蚀剂被施加到半导体器件的主表面，并且掩模被投影在被覆盖的主表面上。 在不需要劈裂的区域中，掩模是不透明的。 在抗蚀剂暴露之后，除去掩模和显影抗蚀剂，离子束被定位入入半导体表面，使得在没有抗蚀剂覆盖半导体结构的区域中发生离子束蚀刻。 一旦在未被抗蚀剂覆盖的区域中蚀刻足够的深度，使得那些区域中的半导体结构的强度显着小于由抗蚀剂覆盖的那些区域的强度，则离子束蚀刻工艺结束，并且抗蚀剂从半导体 结构体。 随后，在发生离子束蚀刻的区域内施加力以在该区域内切割半导体结构。 这种切割可以在蚀刻半导体器件的刻面之前或之后发生。
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公开(公告)号：US20100039134A1
公开(公告)日：2010-02-18
申请号：US12190914
申请日：2008-08-13
IPC分类号： G01R31/26
CPC分类号： H01S5/0021 , G01R31/2849 , G02B6/4246 , H01S5/02248 , H01S5/22
摘要： Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.
摘要翻译： 半导体激光器老化以识别弱或有缺陷的器件，从而提高其余器件的可靠性。 激光器可以使用高功率光学老化来老化，其包括向激光器提供高驱动电流一段时间，并且将激光器的环境温度保持在低温。 在高功率光学老化之后，可以测量激光器的输出，以确定激光器是否在规格范围内运行。 那些不能被丢弃的那些，而那些可以使用高温热老化进一步老化，其包括向激光器提供驱动电流，同时将激光器的环境温度保持在高温。
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8.发明授权公开(公告)号：US07011979B2
公开(公告)日：2006-03-14
申请号：US10387621
申请日：2003-03-12
IPC分类号： H01L21/66
CPC分类号： H01S5/18338 , H01S5/0042 , H01S5/18311 , H01S2301/176
摘要： A method for detecting a passivation pinhole includes forming an oxide vertical cavity surface-emitting laser (VCSEL) having an oxidation cavity, forming a passivation layer over a surface of the oxidation cavity, exposing the oxide VCSEL to an etchant vapor, and inspecting the oxide VCSEL for a defect caused by the etchant vapor.
摘要翻译： 一种用于检测钝化针孔的方法包括形成具有氧化腔的氧化物垂直腔表面发射激光器（VCSEL），在氧化腔的表面上形成钝化层，将氧化物VCSEL暴露于蚀刻剂蒸气，并检查氧化物 VCSEL用于由蚀刻剂蒸气引起的缺陷。
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