公开(公告)号：US5571852A

公开(公告)日：1996-11-05

申请号：US472120

申请日：1995-06-07

申请人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C08J7/00 ,  C08K3/04 ,  C08K9/02 ,  H01B3/30 ,  H01L21/312 ,  H05K1/03 ,  H05K3/10 ,  C08J3/28

CPC分类号： H05K1/0373 ,  C08K3/04 ,  C08K9/02 ,  H05K1/0346 ,  H05K2201/0154 ,  H05K2201/0239 ,  H05K2201/0323 ,  H05K2201/068 ,  H05K3/105 ,  Y10T428/31544

摘要： Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns.The composite can be made conductive by irradiating it with an UV excimer laser.

公开(公告)号：US5047649A

公开(公告)日：1991-09-10

申请号：US594269

申请日：1990-10-09

申请人： Rodney T. Hodgson ,  Jackson E. Stanland ,  Oliver C. Wells

发明人： Rodney T. Hodgson ,  Jackson E. Stanland ,  Oliver C. Wells

IPC分类号： H01L21/027 ,  B41M5/20 ,  G01Q10/00 ,  G01Q30/20 ,  G01Q80/00 ,  G03F7/00 ,  G11B9/00 ,  H01J37/317 ,  H01L21/203 ,  H01L21/205 ,  H01L21/30 ,  H01L21/302

CPC分类号： G03F7/0002 ,  B41M5/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2049 ,  G11B9/14 ,  H01J37/3174 ,  G01Q80/00 ,  H01J2237/0044 ,  H01J2237/31738 ,  H01J2237/31747 ,  H01J2237/31759 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/859

摘要： A method and apparatus for producing fine line patterns on insulating surfaces utilizing a conductive spring-like cantilever having a pointed tip which is in proximity to the surface to be affected. Electrons emitted from the tip travel toward the insulator surface and cause changes therein or affect molecules located in the proximity of the insulator surface. Tunneling current is not required, and a highly conducting return current path for electrons through the insulator is not necessary. The incident electrons can be used to provide patterned, narrow-width features either by deposition of a material onto the insulator surface, or by producing etching in localized regions of the insulator surface, or by changing the insulator surface so that it can be etched.

公开(公告)号：US4814855A

公开(公告)日：1989-03-21

申请号：US857227

申请日：1986-04-29

申请人： Rodney T. Hodgson ,  Harry J. Jones ,  Peter G. Ledermann ,  Timothy C. Reiley ,  Paul A. Moskowitz

发明人： Rodney T. Hodgson ,  Harry J. Jones ,  Peter G. Ledermann ,  Timothy C. Reiley ,  Paul A. Moskowitz

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/538 ,  H05K3/40

CPC分类号： H01L24/86 ,  H01L24/10 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/75 ,  H01L2224/7565 ,  H01L2224/7965 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/207 ,  H01L2924/3025 ,  H05K3/4046 ,  H05K3/4092

摘要： Automated bonding of chips to tape and formation of bonding structures on Tape Automated Bonding (TAB) packaging structures are provided with bonding balls on the ends of beams leads of the TAB tape. Also balltape bonding balls are aligned on stacked TAB sheets and bonded together to form via interconnections through stacked balltape balls in multilayer, electronic packaging structures. Interconnection structures are provided for a universal chip connection laminate which can be applied between a chip and an MLC package. Area TAB tape, which comprises a modification of TAB tape provides balltape TAB connections by means of balltape bonds to areas within the interior of a chip whose leads are bonded in a TAB tape arrangement to the Inner Lead Bonds of the area tape.

摘要翻译： 芯片自动粘合到胶带上，并在胶带自动粘合（TAB）包装结构上形成粘合结构，在TAB胶带的光束引线的端部设有粘结球。 此外，球状粘结球在堆叠的TAB片上对准并且结合在一起，以通过多层电子包装结构中的堆叠球状球形成通孔互连。 为通用芯片连接层压板提供互连结构，其可应用于芯片和MLC封装之间。 包括TAB带的修改的区域TAB带通过球形连接提供球形TAB连接，该贴片连接到其引线以TAB带布置结合到区域带的内引线键的芯片内部的区域。

公开(公告)号：US4472206A

公开(公告)日：1984-09-18

申请号：US440655

申请日：1982-11-10

申请人： Rodney T. Hodgson ,  Thomas N. Jackson ,  Hans S. Rupprecht ,  Jerry M. Woodall

发明人： Rodney T. Hodgson ,  Thomas N. Jackson ,  Hans S. Rupprecht ,  Jerry M. Woodall

IPC分类号： C30B29/40 ,  C30B31/22 ,  H01L21/265 ,  H01L21/314 ,  H01L21/324 ,  H01L21/477

CPC分类号： H01L21/3245 ,  H01L21/26546 ,  H01L21/314

摘要： Ion implanted impurity activation in a multi-element compound semiconductor crystal such as gallium arsenide, GaAs, over a broad integrated circuit device area, is accomplished using a short time anneal, in the proximity of a uniform concentration of the most volatile element of said crystal, in solid form, over the broad integrated circuit device area surface. A GaAs integrated circuit wafer having ion implanted impurities in the surface for an integrated circuit is annealed in the vicinity of 800.degree.-900.degree. C. for a time of the order of 1-20 seconds in the proximity of a uniform layer of solid arsenic.

摘要翻译： 在广泛的集成电路器件区域上的多元素化合物半导体晶体（例如砷化镓，GaAs）中的离子注入杂质活化是通过使用短时间退火在所述晶体的最易挥发元素的均匀浓度附近 以固体形式，在广泛的集成电路器件区域表面上。 在集成电路表面上具有离子注入杂质的GaAs集成电路晶片在800-900℃附近在均匀的固体砷层附近退火约1-20秒的时间 。

公开(公告)号：US4354198A

公开(公告)日：1982-10-12

申请号：US154700

申请日：1980-05-30

申请人： Rodney T. Hodgson ,  George D. Pettit ,  Thomas O. Sedgwick ,  Jerry M. Woodall

发明人： Rodney T. Hodgson ,  George D. Pettit ,  Thomas O. Sedgwick ,  Jerry M. Woodall

IPC分类号： H01L21/324 ,  H01L21/314 ,  H01L21/428 ,  H01L23/29 ,  H01L23/31 ,  H01L29/161

CPC分类号： H01L23/3171 ,  H01L21/428 ,  H01L23/291 ,  H01L2924/0002

摘要： The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.

摘要翻译： 本公开提供了使用II-VI族化合物半导体作为表面钝化剂以通过局部加热步骤控制III-V族化合物半导体的表面上的载流子的重组。 对于本发明的实践，理论上可以通过II-VI化合物与过量的V族元素的化学反应来实现电荷载体的重组的控制。 具体地，本公开提供了在GaAs器件上使用激光退火的ZnS的覆盖层作为钝化层。

公开(公告)号：US4202704A

公开(公告)日：1980-05-13

申请号：US968887

申请日：1978-12-13

申请人： Rodney T. Hodgson ,  Harold J. Hovel ,  Jerry M. Woodall

发明人： Rodney T. Hodgson ,  Harold J. Hovel ,  Jerry M. Woodall

IPC分类号： H01L31/04 ,  H01L31/055

CPC分类号： H01L31/055 ,  Y02E10/52

摘要： Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al.sub.2 O.sub.3 :Cr.sup.+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate.

摘要翻译： 通过提供具有适当掺杂的半透明变频支撑构件，例如能够移动入射光能量的波长的Al 2 O 3 :Cr + 3（红宝石），可以在诸如太阳能电池的半导体光能转换装置的构造中实现增强的效率 在半导体器件效率最高的方向。 通过在器件的有源区域和光变换衬底之间提供晶体完整的容纳区域可以进一步提高效率。

公开(公告)号：US5556899A

公开(公告)日：1996-09-17

申请号：US346766

申请日：1994-11-30

申请人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C08J7/00 ,  C08K3/04 ,  C08K9/02 ,  H01B3/30 ,  H01L21/312 ,  H05K1/03 ,  H05K3/10 ,  C08J5/18

CPC分类号： H05K1/0373 ,  C08K3/04 ,  C08K9/02 ,  H05K1/0346 ,  H05K2201/0154 ,  H05K2201/0239 ,  H05K2201/0323 ,  H05K2201/068 ,  H05K3/105 ,  Y10T428/31544

摘要： Disclosed is a process of effecting a change in the dielectric constant and coefficient of thermal expansion of a polyimide material, by forming a composite based on a dispersion of 2-60 wt. % of fluorinated particulate carbon material and a polyimide or polyimide precursor, and heating the dispersion to about 400.degree. C. at 65.degree.-200.degree. C./second.

摘要翻译： 公开了通过基于2-60重量份的分散体形成复合材料来实现聚酰亚胺材料的介电常数和热膨胀系数的变化的方法。 ％的氟化颗粒碳材料和聚酰亚胺或聚酰亚胺前体，并将分散体在65℃-200℃/秒加热至约400℃。

公开(公告)号：US4550257A

公开(公告)日：1985-10-29

申请号：US626178

申请日：1984-06-29

申请人： Gerd K. Binnig ,  Randall M. Feenstra ,  Rodney T. Hodgson ,  Heinrich Rohrer ,  Jerry M. Woodall

发明人： Gerd K. Binnig ,  Randall M. Feenstra ,  Rodney T. Hodgson ,  Heinrich Rohrer ,  Jerry M. Woodall

IPC分类号： H01L21/3205 ,  C23C16/04 ,  H01J37/317 ,  H01J37/32

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  C23C16/047 ,  H01J37/3174 ,  H01J37/32 ,  H01J2237/31738 ,  H01J2237/31759 ,  Y10S977/857

摘要： The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current energy is tuned to the energy required to dissociate the gas.

摘要翻译： 使用穿过气体的隧道电流来实现8埃量级的线的形成，该气体改变以提供作为线的基础的残留物。 隧道电流能量被调节到解离气体所需的能量。

公开(公告)号：US5591285A

公开(公告)日：1997-01-07

申请号：US475670

申请日：1995-07-24

申请人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C08J7/00 ,  C08K3/04 ,  C08K9/02 ,  H01B3/30 ,  H01L21/312 ,  H05K1/03 ,  H05K3/10 ,  B32B31/28 ,  B32B27/16

CPC分类号： H05K1/0373 ,  C08K3/04 ,  C08K9/02 ,  H05K1/0346 ,  H05K2201/0154 ,  H05K2201/0239 ,  H05K2201/0323 ,  H05K2201/068 ,  H05K3/105 ,  Y10T428/31544

摘要： Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns.The composite can be made conductive by irradiating it with an UV excimer laser.

摘要翻译： 公开了包含分散在聚合物中的氟化颗粒碳的复合物的结构，氟化碳的存在量足以降低组合物的介电常数，该结构还包括电导体图案。 可以通过用UV准分子激光器照射该复合材料来导电。

公开(公告)号：US5471948A

公开(公告)日：1995-12-05

申请号：US240880

申请日：1994-05-11

申请人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M. Woodall

发明人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M. Woodall

IPC分类号： H01L31/0232 ,  H01L31/105 ,  H01L21/20

CPC分类号： H01L31/0232 ,  H01L31/105

摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.

摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。