公开(公告)号：US20240361195A1

公开(公告)日：2024-10-31

申请号：US18642297

申请日：2024-04-22

申请人： ROHM CO., LTD.

发明人： Masahiro SAKURAGI

IPC分类号： G01L9/00

CPC分类号： G01L9/0045 ,  G01L9/0044 ,  G01L9/0051

摘要： A sensor includes a substrate. A cavity is formed in the substrate. The substrate includes a membrane spaced from and facing a bottom surface of the cavity. A plurality of protruding portions are formed on one of the bottom surface of the cavity and an inner surface of the membrane.

公开(公告)号：US20240356439A1

公开(公告)日：2024-10-24

申请号：US18635142

申请日：2024-04-15

申请人： ROHM CO., LTD.

发明人： Kiyoshi KANSAKU

IPC分类号： H02M3/156 ,  H03K3/037

CPC分类号： H02M3/156 ,  H03K3/037

摘要： A power-supply control apparatus includes a controller that is configured to perform duty control on a switch device which forms an output stage of a switched-mode power supply which is configured to generate an output voltage from an input voltage. The controller has an OFF-skip function to skip cyclic OFF transitions of the switch device. The controller keeps the switch device turned ON by ignoring a reset signal based on feedback control on the output voltage under a state in which the OFF-skip function is implemented.

公开(公告)号：US20240355892A1

公开(公告)日：2024-10-24

申请号：US18763081

申请日：2024-07-03

申请人： ROHM CO., LTD.

发明人： Yasunobu HAYASHI

IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L29/40 ,  H01L29/51

CPC分类号： H01L29/4234 ,  H01L29/408 ,  H01L29/51 ,  H01L29/40117

摘要： A semiconductor device includes a planar gate structure including a gate insulating film and a gate electrode, and a sidewall structure disposed adjacent to a lateral side of the planar gate structure. The sidewall structure includes a first insulating film and a second insulating film, and a charge storage film disposed between the first insulating film and the second insulating film. The first insulating film is adjacent to the planar gate structure. A ratio between a gate length L of the planar gate structure and a width WS of the sidewall structure is less than or equal to 300/75. Thereby, a semiconductor device having an improved data read and write reliability in a memory structure can be provided.

公开(公告)号：US20240355889A1

公开(公告)日：2024-10-24

申请号：US18761637

申请日：2024-07-02

申请人： ROHM CO., LTD.

发明人： Junya FUKUNISHI

IPC分类号： H01L29/40 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78

CPC分类号： H01L29/407 ,  H01L29/0696 ,  H01L29/41741 ,  H01L29/7813

摘要： A semiconductor device includes: a semiconductor layer; a gate trench formed in the semiconductor layer, the gate trench extending in a first direction in plan view; an insulation layer formed on the semiconductor layer; a field plate electrode arranged in the gate trench and having a width in the second direction; and a gate electrode arranged in the gate trench and separated from the field plate electrode by the insulation layer. The gate trench includes a first region in which the gate electrode is located above the field plate electrode in a depth-wise direction of the gate trench, and a second region including an end of the gate trench in the first direction. The field plate electrode in the second region includes a widened portion having a width that is greater than a width of the field plate electrode in the first region.

公开(公告)号：US20240355886A1

公开(公告)日：2024-10-24

申请号：US18760960

申请日：2024-07-01

申请人： ROHM CO., LTD.

发明人： Yasuhiro KAWAKAMI

IPC分类号： H01L29/16 ,  H01L21/04 ,  H01L29/417 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872

CPC分类号： H01L29/1608 ,  H01L21/0495 ,  H01L29/417 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/872 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06181 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/351

摘要： A semiconductor device according to the present invention includes a first conductive-type Sic semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.

公开(公告)号：US12125882B2

公开(公告)日：2024-10-22

申请号：US17598028

申请日：2020-04-14

申请人： ROHM CO., LTD.

发明人： Toshio Nagata

IPC分类号： H01L29/16 ,  H01L21/04 ,  H01L23/00 ,  H01L23/49 ,  H01L29/66

CPC分类号： H01L29/1608 ,  H01L21/0485 ,  H01L23/49 ,  H01L24/05 ,  H01L29/66068 ,  H01L2224/05124 ,  H01L2224/85801 ,  H01L2924/10272

摘要： An SiC semiconductor device includes an SiC chip having a first main surface at one side and a second main surface at another side, a first main surface electrode including a first Al layer and formed on the first main surface, a pad electrode formed on the first main surface electrode and to be connected to a lead wire, and a second main surface electrode including a second Al layer and formed on the second main surface.

公开(公告)号：US12119813B2

公开(公告)日：2024-10-15

申请号：US18047441

申请日：2022-10-18

申请人： ROHM Co., LTD.

发明人： Tetsuo Yamato ,  Shuntaro Takahashi ,  Kazuki Okuyama

IPC分类号： H03K17/687 ,  H01H47/00 ,  H01H47/04 ,  H01H47/32

CPC分类号： H03K17/687 ,  H03K2217/0063 ,  H03K2217/0072

摘要： Disclosed is a switch device including a first terminal, a second terminal, a third terminal, a switch element disposed between the first terminal and the second terminal, a control line that reaches a control end of the switch element from the third terminal, a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal, at least one second circuit block, each second circuit block being connected to a corresponding one of branch power supply lines that branch from the control line, a first resistor disposed between the third terminal and the first circuit block, and at least one second resistor, each second resistor being disposed on a corresponding one of the branch power supply lines.

公开(公告)号：US20240340021A1

公开(公告)日：2024-10-10

申请号：US18746648

申请日：2024-06-18

申请人： ROHM CO., LTD.

发明人： Haruaki NAKAMURA

IPC分类号： H03M1/46 ,  H03M1/06

CPC分类号： H03M1/462 ,  H03M1/0675

摘要： A successive approximation register A/D converter (SARADC) has redundancy. An analog unit samples an analog input voltage and generates a comparison signal indicating a magnitude relationship between a threshold voltage corresponding to a control code and the analog input voltage. A logic unit generates, in an i-th (i≥1) cycle, a first value obtained by adding a weight of an (i+1)-th cycle to a control code of the i-th cycle and a second value obtained by subtracting the weight of the (i+1)-th cycle from the control code of the i-th cycle. When a comparison signal of the cycle is determined, the logic unit supplies one of the first value and the second value corresponding to the comparison signal to the analog unit 110 as a control code of the (i+1)-th cycle.

公开(公告)号：US20240339490A1

公开(公告)日：2024-10-10

申请号：US18744752

申请日：2024-06-17

申请人： ROHM CO., LTD.

发明人： Bungo TANAKA ,  Keiji WADA

IPC分类号： H01L23/00 ,  G01R19/00

CPC分类号： H01L28/20 ,  H01L23/564 ,  G01R19/0084

摘要： A semiconductor device includes a substrate, a lower insulating film that is formed on the substrate, a resistor that is formed on the lower insulating film, and an upper insulating film that is formed on the lower insulating film such as to cover the resistor. The lower insulating film includes a first nitride film and a first SiO-based insulating film that is formed on the first nitride film and the upper insulating film includes a second nitride film. The resistor is formed on the first SiO-based insulating film and a lower surface of a peripheral edge portion of the second nitride film is joined to an upper surface of the first nitride film.

公开(公告)号：US12112869B2

公开(公告)日：2024-10-08

申请号：US17773720

申请日：2020-10-29

申请人： ROHM CO., LTD.

发明人： Soichi Sakakibara ,  Takanori Shinoura ,  Wataru Imahashi

IPC分类号： H01C1/14 ,  H01C3/08 ,  H05K1/18

CPC分类号： H01C1/14 ,  H01C3/08 ,  H05K1/181 ,  H05K2201/10022

摘要： A chip resistor includes a substrate, an upper electrode and a resistor body, a back electrode, a side electrode, and a metal plating layer. The substrate includes an upper surface, a back surface that intersect a thickness-wise direction and a side surface that joins the upper surface and the back surface. The upper electrode and the resistor body are formed on the upper surface. The back electrode is formed on the back surface. The side electrode is formed on the side surface. The metal plating layer includes a back plating layer and a side plating layer. The back plating layer covers at least a portion of the back electrode. The side plating layer covers at least a portion of the side electrode. The metal plating layer has a thickness that is greater than or equal to 10 μm and less than or equal to 60 μm.