公开(公告)号：US20070221613A1

公开(公告)日：2007-09-27

申请号：US11388255

申请日：2006-03-23

申请人： Martin Gutsche ,  Harald Seidl ,  Ronald Schutz

发明人： Martin Gutsche ,  Harald Seidl ,  Ronald Schutz

IPC分类号： C03C15/00 ,  H01L47/00

CPC分类号： B81B3/0072 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure for stopping mechanical cracks in a substrate wafer used for semiconductor device manufacturing, especially a silicon wafer, is described. The structure includes at least one depression that extends into the substrate wafer for at least 20% of the final thickness of the substrate wafer.

摘要翻译： 描述了用于半导体器件制造的衬底晶片，特别是硅晶片中的用于停止机械裂纹的结构。 该结构包括延伸到衬底晶片中至少20％的衬底晶片的最终厚度的至少一个凹陷部。

公开(公告)号：US20060001162A1

公开(公告)日：2006-01-05

申请号：US11084724

申请日：2005-03-18

申请人： Ronald Schutz ,  Werner Robl ,  Rajeev Malik ,  Lawrence Clevenger ,  Oleg Gluschenkov ,  Cyril Cabral ,  Roy Iggulden ,  Yun-Yu Wang ,  Keith Wong ,  Irene McStay

发明人： Ronald Schutz ,  Werner Robl ,  Rajeev Malik ,  Lawrence Clevenger ,  Oleg Gluschenkov ,  Cyril Cabral ,  Roy Iggulden ,  Yun-Yu Wang ,  Keith Wong ,  Irene McStay

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/7685 ,  H01L21/28052 ,  H01L21/28061 ,  H01L21/76838 ,  H01L21/76855 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/4941 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78 ,  H01L2221/1078

摘要： A conductive structure in an integrated circuit (12), and a method of forming the structure, is provided that includes a polysilicon layer (30), a thin layer containing titanium over the polysilicon, a tungsten nitride layer (34) over the titanium-containing layer and a tungsten layer over the tungsten nitride layer. The structure also includes a silicon nitride interfacial region (38) between the polysilicon layer and the titanium-containing layer. The structure withstands high-temperature processing without substantial formation of metal silicides in the polysilicon layer (30) and the tungsten layer (32), and provides low interface resistance between the tungsten layer and the polysilicon layer.

摘要翻译： 提供集成电路（12）中的导电结构和形成该结构的方法，其包括多晶硅层（30），在多晶硅上含有钛的薄层，在钛 - 钛层上的氮化钨层（34） 并且在氮化钨层上形成钨层。 该结构还包括在多晶硅层和含钛层之间的氮化硅界面区域（38）。 该结构经受高温处理，而在多晶硅层（30）和钨层（32）中基本不形成金属硅化物，并且在钨层和多晶硅层之间提供低的界面电阻。

公开(公告)号：US20050153643A1

公开(公告)日：2005-07-14

申请号：US10996669

申请日：2004-11-24

申请人： Alexander Simpson ,  Ronald Schutz

发明人： Alexander Simpson ,  Ronald Schutz

IPC分类号： B24B37/24 ,  B24D3/34 ,  H01L21/3105 ,  H01L21/321 ,  B24B1/00

CPC分类号： B24B37/245 ,  B24D3/34 ,  H01L21/31053 ,  H01L21/3212

摘要： A polyelectrolyte dispensing polishing pad, a process for its production and a method of polishing, e.g., chemical mechanical polishing (CMP), a substrate such as a semiconductor wafer, are provided. The pad is usable for CMP planarization of an oxide or metal layer on the wafer. The pad has a polishing layer of erodible binder material containing uniformly distributed therein both abrasive particles and a water soluble ionizable electrolyte substance such as a polyelectrolyte, such that during polishing the binder material incrementally erodes and the abrasive particles and electrolyte substance is incrementally release into direct contact with the substrate. The electrolyte substance inhibits CMP removal of silicon nitride, e.g., as a stop layer, under an upper oxide or metal layer, such that the upper layer is selectively polished and the CMP stops on the stop layer leaving the latter intact.

摘要翻译： 提供聚电解质分配抛光垫，其制造方法和抛光方法，例如化学机械抛光（CMP），诸如半导体晶片的基板。 衬垫可用于晶片上的氧化物或金属层的CMP平坦化。 该垫具有含有均匀分布在其中的磨蚀性颗粒和水溶性可电离电解质物质如聚电解质的可侵蚀粘合剂材料的抛光层，使得在抛光期间粘合剂材料逐渐侵蚀，并且研磨颗粒和电解质物质逐渐释放到直接 与基板接触。 该电解质物质抑制了在上部氧化物或金属层下的作为停止层的氮化硅的CMP去除，使得上层被选择性地抛光，并且CMP停止在停止层上，使其保持不变。

公开(公告)号：US07297115B2

公开(公告)日：2007-11-20

申请号：US10724382

申请日：2003-11-26

申请人： Kenneth N. Bates ,  William McDonough ,  Ronald Schutz ,  Evan Dudik

发明人： Kenneth N. Bates ,  William McDonough ,  Ronald Schutz ,  Evan Dudik

IPC分类号： A61B8/00 ,  H01R13/52

CPC分类号： A61B8/12 ,  A61B5/6826 ,  A61B5/6838 ,  A61B8/00 ,  A61B8/42 ,  A61B8/4281 ,  A61B8/4422 ,  A61B8/4455 ,  H01R13/2414 ,  H01R13/5224 ,  H01R13/533 ,  H01R2201/12 ,  Y10S439/909

摘要： A ultrasound platform is used to generate, process and display ultrasound images using a probe connected via a sterilizable connector. The probe is used to take ultrasound images, and can be a sterilizable finger mounted probe. The sterilizable connector includes a connector housing which has been sealed to prevent moisture from entering it, and a multi-wire cable which is electrically coupled to the probe at a first end and coupled to the connector housing at a second end. The multi-wire cable has its second end sealed with the connector housing to prevent moisture from entering the sealing between the multi-wire cable and the connector housing. A plurality of electrical contacts are formed on at least one surface of the sterilizable connector. A mating connector is used to electrically couple the sterilizable connector to a standard connector for directly connecting to the ultrasound platform. The mating connector has a plurality of mating contacts formed thereon for electrical coupling with the electrical contacts of the sterilizable connector. The sterilizable connector can be separated from the standard connector and the mating connector, such that the probe and the sterilizable connector can be sterilized.

摘要翻译： 使用超声波平台来生成，处理和显示使用通过可灭菌连接器连接的探头的超声图像。 探头用于拍摄超声波图像，可以是可消毒的手指探针。 可灭菌连接器包括已被密封以防止湿气进入的连接器壳体;以及多线缆，其在第一端处电耦合到探针并且在第二端处联接到连接器壳体。 多线电缆的第二端用连接器壳体密封，以防止湿气进入多线电缆和连接器外壳之间的密封。 在可灭菌连接器的至少一个表面上形成多个电触头。 配对连接器用于将可灭菌连接器电连接到用于直接连接到超声平台的标准连接器。 配合连接器具有形成在其上的多个配合触点，用于与可灭菌连接器的电触头电耦合。 可灭菌连接器可以与标准连接器和配合连接器分离，使得探针和可消毒的连接器可以被灭菌。

公开(公告)号：US20050215362A1

公开(公告)日：2005-09-29

申请号：US10813141

申请日：2004-03-29

申请人： Ronald Schutz ,  Alan Miller

发明人： Ronald Schutz ,  Alan Miller

IPC分类号： A63B59/12 ,  A63B59/14

CPC分类号： A63B59/70 ,  A63B2102/22 ,  A63B2102/24 ,  A63B2209/00

摘要： A hockey stick shaft is a hollow, thin-walled tube formed of titanium or a titanium alloy. The tube wall has a thickness which may be uniform, tapered or stepped. The titanium or titanium alloy is of an alpha, a near-alpha, an alpha-beta or a highly-aged beta type. The titanium or titanium alloy has an elastic modulus greater than 13 million pounds per square inch (psi), a yield strength above 50,000 psi and a wall thickness ranging from 0.020 to 0.045 inches. An alternate hockey stick shaft has a titanium or titanium alloy core and exterior formed of a composite material. The titanium or titanium alloy core is of an alpha, a near-alpha, an alpha-beta or a beta type and has a yield strength above roughly 40,000 psi and a wall thickness ranging from 0.010 to 0.040 inches.

摘要翻译： 曲棍球杆是由钛或钛合金形成的中空的薄壁管。 管壁的厚度可以是均匀的，锥形的或阶梯式的。 钛或钛合金具有α，α，α-β或高度老化的β型。 钛或钛合金具有大于1300万磅/平方英寸（psi）的弹性模量，高于50,000psi的屈服强度和0.020至0.045英寸的壁厚。 替代的曲棍球棒轴具有由复合材料形成的钛或钛合金芯和外部。 钛或钛合金芯具有α，α，α-β或β型近似α型，屈服强度大于40,000psi，壁厚范围为0.010至0.040英寸。