公开(公告)号：US07220650B2

公开(公告)日：2007-05-22

申请号：US10821438

申请日：2004-04-09

申请人： Rong-Hui Kao ,  Chang-Sheng Tsao ,  Yen-Ming Chen ,  Lin-June Wu

发明人： Rong-Hui Kao ,  Chang-Sheng Tsao ,  Yen-Ming Chen ,  Lin-June Wu

IPC分类号： H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/2652 ,  H01L29/6656

摘要： An offset spacer layer for an LDD ion implantation process is formed by blanket deposition without photolithography and dry etch processes. The offset spacer layer remaining on LDD regions during an ion implantation process prevents a substrate from silicon loss and dosage contamination and has densified characteristics to improve device reliability.

摘要翻译： 用于LDD离子注入工艺的偏移间隔层通过无光刻和干蚀刻工艺的覆盖沉积形成。 在离子注入工艺期间残留在LDD区域上的偏移间隔层防止了衬底的硅损耗和剂量污染，并具有致密的特性以提高器件的可靠性。

公开(公告)号：US20050227446A1

公开(公告)日：2005-10-13

申请号：US10821438

申请日：2004-04-09

申请人： Rong-Hui Kao ,  Chang-Sheng Tsao ,  Yen-Ming Chen ,  Lin-June Wu

发明人： Rong-Hui Kao ,  Chang-Sheng Tsao ,  Yen-Ming Chen ,  Lin-June Wu

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/105 ,  H01L29/78

CPC分类号： H01L29/6659 ,  H01L21/2652 ,  H01L29/6656

摘要： An offset spacer layer for an LDD ion implantation process is formed by blanket deposition without photolithography and dry etch processes. The offset spacer layer remaining on LDD regions during an ion implantation process prevents a substrate from silicon loss and dosage contamination and has densified characteristics to improve device reliability.

摘要翻译： 用于LDD离子注入工艺的偏移间隔层通过无光刻和干蚀刻工艺的覆盖沉积形成。 在离子注入工艺期间残留在LDD区域上的偏移间隔层防止了衬底的硅损耗和剂量污染，并具有致密的特性以提高器件的可靠性。

公开(公告)号：US06503333B2

公开(公告)日：2003-01-07

申请号：US09726628

申请日：2000-11-30

申请人： Jih-Churng Twu ,  Rong-Hui Kao ,  Chia-Chun Cheng

发明人： Jih-Churng Twu ,  Rong-Hui Kao ,  Chia-Chun Cheng

IPC分类号： C23G102

CPC分类号： H01L21/67028 ,  B08B3/08 ,  B08B2203/005 ,  Y10S134/902

摘要： A method for cleaning a silicon wafer by a wet bench method with improved cleaning efficiency and without oxide formation is disclosed. In the method, the wafer may first be cleaned in a first cleaning solution that includes a base or an acid, and then the wafer is rinsed in a second solution that includes DI water and ozone. The ozone concentration in the DI water may be between about 1 ppm and about 20 ppm, and preferably between about 3 ppm and about 10 ppm. A diluted HF cleaning step may be utilized after the ozone/DI water rinsing step to remove any possible oxide formation on the silicon surface before a final rinsing step and drying step.

公开(公告)号：US06425191B1

公开(公告)日：2002-07-30

申请号：US09837815

申请日：2001-04-18

申请人： Rong-Hui Kao ,  Ming-Dar Guo ,  Jih-Churng Twu ,  Tsung-Chieh Tsai ,  Chia-Chun Cheng

发明人： Rong-Hui Kao ,  Ming-Dar Guo ,  Jih-Churng Twu ,  Tsung-Chieh Tsai ,  Chia-Chun Cheng

IPC分类号： F26B300

CPC分类号： H01L21/67034

摘要： An apparatus and a method for reducing solvent residue in a solvent-type dryer for drying semiconductor wafers have been disclosed. The apparatus is constructed by a tank body, a wafer carrier, an elevator means, a tank cover, a solvent vapor conduit and an exhaust means. The exhaust means is provided for fluid communication with a compartment in the tank cover such that any residual solvent vapor or any organic residue in the compartment left from the wafer drying cycle can be evacuated to a factory exhaust system. The present invention novel method for reducing solvent or organic residue in the dryer can be carried out, after the removal of the dried wafers from the dryer, by evacuating the compartment in the tank cover for a time period of between about 30 sec. and about 300 sec. until all residual solvent vapor or organic residue is evacuated.

摘要翻译： 已经公开了用于干燥半导体晶片的溶剂型干燥器中用于还原溶剂残留物的装置和方法。 该装置由罐体，晶片载体，电梯装置，罐盖，溶剂蒸气导管和排气装置构成。 提供排气装置用于与罐盖中的隔室流体连通，使得离开晶片干燥循环的隔室中的任何残留溶剂蒸气或任何有机残余物可被排空到工厂排气系统。 本发明的用于还原干燥机中的溶剂或有机残留物的新方法可以在从干燥器中除去干燥的晶片之后，通过将储罐盖中的隔室抽空约30秒的时间来进行。 约300秒 直到所有残留的溶剂蒸气或有机残余物被抽空。

公开(公告)号：US06589356B1

公开(公告)日：2003-07-08

申请号：US09676746

申请日：2000-09-29

申请人： Juin-Jie Chang ,  Jih-Churng Twu ,  Rong-Hui Kao

发明人： Juin-Jie Chang ,  Jih-Churng Twu ,  Rong-Hui Kao

IPC分类号： C23G102

CPC分类号： H01L21/02046 ,  H01L21/02052

摘要： A method for cleaning a silicon-based substrate in an ammonia-containing solution without incurring any damages to the silicon surface by NH4OH vapor is described. The method can be conducted by first providing a silicon-based substrate that has a silicon surface, then forming a silicon oxide layer of very small thickness, i.e. less than 10 Å, on the silicon surface. The silicon-based substrate can then be cleaned in an ammonia-containing solution without incurring any surface damage to the silicon, i.e. such as the formation of silicon holes. The present invention novel method can be carried out by either adding an additional oxidation tank before the SC-1 cleaning tank, or adding an oxidant to a quick dump rinse tank prior to the SC-1 cleaning process.

摘要翻译： 描述了一种在含氨溶液中清洗硅基底物而不会由NH 4 OH蒸气对硅表面造成任何损害的方法。 该方法可以通过首先提供具有硅表面的硅基衬底，然后在硅表面上形成非常小的厚度（即，小于）的氧化硅层来进行。 然后可以在含氨溶液中清洗硅基基材，而不会对硅造成任何表面损伤，例如形成硅孔。 本发明的新方法可以通过在SC-1清洗槽之前添加另外的氧化槽，或在SC-1清洗过程之前向快速倾倒冲洗槽中加入氧化剂来进行。