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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08866151B2

    公开(公告)日：2014-10-21

    申请号：US13425246

    申请日：2012-03-20

    申请人： Takao Noda ,  Ryoichi Ohara ,  Kenya Sano ,  Toru Sugiyama

    发明人： Takao Noda ,  Ryoichi Ohara ,  Kenya Sano ,  Toru Sugiyama

    IPC分类号： H01L29/161 ,  H01L29/47 ,  H01L29/872 ,  H01L29/66 ,  H01L29/16 ,  H01L29/20 ,  H01L29/43 ,  H01L29/06 ,  H01L21/04

    CPC分类号： H01L29/1608 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/43 ,  H01L29/6606 ,  H01L29/872

    摘要： According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface.

    摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的半导体层，选择性地设置在半导体层的第一主表面中的第二导电类型的第一区域，第二导电类型的第二区域选择性地设置在 第一主表面并连接到第一区域，与半导体层和第一区域接触设置的第一电极，与第二区域接触的第二电极和与半导体的第二主表面电连接的第三电极 层与第一主表面相对。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120241762A1

    公开(公告)日：2012-09-27

    申请号：US13425246

    申请日：2012-03-20

    申请人： Takao NODA ,  Ryoichi Ohara ,  Kenya Sano ,  Toru Sugiyama

    发明人： Takao NODA ,  Ryoichi Ohara ,  Kenya Sano ,  Toru Sugiyama

    IPC分类号： H01L29/161 ,  H01L29/47

    CPC分类号： H01L29/1608 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/43 ,  H01L29/6606 ,  H01L29/872

    摘要： According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface.

    摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的半导体层，选择性地设置在半导体层的第一主表面中的第二导电类型的第一区域，第二导电类型的第二区域选择性地设置在 第一主表面并连接到第一区域，与半导体层和第一区域接触设置的第一电极，与第二区域接触的第二电极和与半导体的第二主表面电连接的第三电极 层与第一主表面相对。

    Thin film piezoelectric resonator and manufacturing process thereof
    3.
    发明授权
    Thin film piezoelectric resonator and manufacturing process thereof 有权
    薄膜压电谐振器及其制造方法

    公开(公告)号：US07501739B2

    公开(公告)日：2009-03-10

    申请号：US11115158

    申请日：2005-04-27

    申请人： Kazuhiko Itaya ,  Takashi Kawakubo ,  Kenya Sano ,  Ryoichi Ohara

    发明人： Kazuhiko Itaya ,  Takashi Kawakubo ,  Kenya Sano ,  Ryoichi Ohara

    IPC分类号： H01L41/08

    CPC分类号： H03H3/02 ,  H03H9/174 ,  H03H2003/023

    摘要： A thin film piezoelectric resonator includes a substrate having a cavity, and a resonance portion located on the substrate and right above the cavity. The resonance portion includes a lower electrode layer located at a side of the cavity, an upper electrode layer opposite to the lower electrode layer, and a piezoelectric thin film located between the upper electrode layer and the lower electrode layer. A side of the piezoelectric thin film and a side of the lower electrode layer are located in a common plane.

    摘要翻译： 薄膜压电谐振器包括具有空腔的基板和位于基板上方且在空腔正上方的谐振部分。 谐振部分包括位于空腔侧面的下电极层，与下电极层相对的上电极层，以及位于上电极层和下电极层之间的压电薄膜。 压电薄膜的一侧和下电极层的一侧位于公共平面中。

    Thin film piezoelectric actuator
    4.
    发明授权
    Thin film piezoelectric actuator 失效
    薄膜压电致动器

    公开(公告)号：US07459833B2

    公开(公告)日：2008-12-02

    申请号：US11054404

    申请日：2005-02-10

    申请人： Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

    发明人： Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

    IPC分类号： H01L41/08

    CPC分类号： H01G7/06 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

    摘要： A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

    摘要翻译： 薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。 驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极 压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部 以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

    THIN FILM PIEZOELECTRIC ACTUATOR
    6.
    发明申请
    THIN FILM PIEZOELECTRIC ACTUATOR 失效
    薄膜压电致动器

    公开(公告)号：US20070278900A1

    公开(公告)日：2007-12-06

    申请号：US11781667

    申请日：2007-07-23

    申请人： Takashi KAWAKUBO ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

    发明人： Takashi KAWAKUBO ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

    IPC分类号： H01L41/08

    CPC分类号： H01G7/06 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

    摘要： A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

    摘要翻译： 薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。 驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极 压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部 以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

    FILM BULK ACOUSTIC RESONATOR AND FILM BULK ACOUSTIC RESONATOR FILTER
    7.
    发明申请
    FILM BULK ACOUSTIC RESONATOR AND FILM BULK ACOUSTIC RESONATOR FILTER 审中-公开
    电影大容量声学谐振器和薄膜音箱谐振器滤波器

    公开(公告)号：US20070188270A1

    公开(公告)日：2007-08-16

    申请号：US11671206

    申请日：2007-02-05

    申请人： Ryoichi Ohara ,  Naoko Yanase ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhiko Itaya

    发明人： Ryoichi Ohara ,  Naoko Yanase ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhiko Itaya

    IPC分类号： H03H9/58

    CPC分类号： H03H9/131 ,  H03H9/13 ,  H03H9/173 ,  H03H9/174 ,  H03H9/568 ,  H03H9/605 ,  H03H2003/0428 ,  H03H2003/0471

    摘要： A film bulk acoustic resonator includes: a support substrate; and a laminated body provided on the support substrate, a portion of the laminated body being supported by the support substrate and another portion of the laminated body being spaced from the support substrate. The laminated body includes: a first electrode primarily composed of aluminum; a piezoelectric film laminated on the first electrode and primarily composed of aluminum nitride; and a second electrode laminated on the piezoelectric film. The second electrode is primarily composed of a metal having a density of 1.9 or more times the density of aluminum.

    摘要翻译： 薄膜体声波谐振器包括：支撑基板; 以及设置在所述支撑基板上的层叠体，所述层叠体的一部分由所述支撑基板支撑，所述层叠体的另一部分与所述支撑基板间隔开。 层叠体包括：主要由铝构成的第一电极; 层压在第一电极上并主要由氮化铝构成的压电薄膜; 和层压在压电膜上的第二电极。 第二电极主要由密度为铝密度的1.9倍以上的金属构成。

    Thin-film piezoelectric resonator and filter circuit
    8.
    发明申请
    Thin-film piezoelectric resonator and filter circuit 审中-公开
    薄膜压电谐振器和滤波电路

    公开(公告)号：US20070176513A1

    公开(公告)日：2007-08-02

    申请号：US10581030

    申请日：2006-03-08

    申请人： Ryoichi Ohara ,  Naoko Yanase ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhiko Itaya

    发明人： Ryoichi Ohara ,  Naoko Yanase ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhiko Itaya

    IPC分类号： H01L41/09

    CPC分类号： H03H9/174 ,  H03H9/02125 ,  H03H9/132 ,  H03H9/588 ,  H03H9/605

    摘要： It is possible to provide a resonator structure that does not cause a variation in anti-resonant frequency can be achieved, even if the cavity and the upper and lower electrode shift. A thin-film piezoelectric resonator includes: a lower electrode provided on the principal surface of the substrate so as to cover the cavity; a piezoelectric film provided on the lower electrode so as to be located above the cavity; and an upper electrode. The upper electrode includes: a main portion which overlaps a part of the cavity, a protruding portion connected to the main portion, an extension portion provided at the opposite side of the main portion. The length of the protruding portion in a direction perpendicular to a direction of connecting to the main portion is substantially the same as the length of the connecting portion in a direction perpendicular to a direction of connecting to the main portion.

    摘要翻译： 即使空腔和上下电极发生偏移，也可以提供不会引起抗共振频率变化的谐振器结构。 薄膜压电谐振器包括：设置在基板的主表面上以覆盖空腔的下电极; 设置在所述下电极上以便位于所述空腔上方的压电膜; 和上电极。 上部电极包括：与空腔的一部分重叠的主要部分，连接到主要部分的突出部分，设置在主要部分相对侧的延伸部分。 突出部分在垂直于与主要部分连接的方向的方向上的长度基本上与连接部分在垂直于连接主体部分的方向的方向上的长度相同。

    Radio frequency semiconductor device
    10.
    发明授权
    Radio frequency semiconductor device 有权
    射频半导体器件

    公开(公告)号：US08134224B2

    公开(公告)日：2012-03-13

    申请号：US12046033

    申请日：2008-03-11

    申请人： Yoshitomo Sagae ,  Fumio Sasaki ,  Ryoichi Ohara

    发明人： Yoshitomo Sagae ,  Fumio Sasaki ,  Ryoichi Ohara

    IPC分类号： H01L21/02 ,  H01L21/425

    CPC分类号： H01L27/1203 ,  H01L21/76264 ,  H01L21/823878 ,  H01L23/552 ,  H01L23/66 ,  H01L29/16 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.

    摘要翻译： 作为输入接收具有500MHz以上的频率和20dBm以上的功率的射频信号的半导体装置。 半导体器件包括：硅衬底; 形成在硅衬底上的氧化硅膜; 设置在氧化硅膜上并通过射频信号的射频互连; 设置在氧化硅膜上并以固定电位放置的固定电位互连; 和受主掺杂层。 受主掺杂层形成在硅衬底的区域中。 该区域与氧化硅膜接触。 受主掺杂层掺杂有受体。