公开(公告)号：US08754431B2

公开(公告)日：2014-06-17

申请号：US13412044

申请日：2012-03-05

申请人： Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Kenji Nakamura ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Kenji Nakamura ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/30 ,  H01L33/10

CPC分类号： H01L33/30 ,  H01L33/10 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。 第一电极层具有具有通孔的金属部分。 第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。 第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。 第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。 发光层设置在第一和第二半导体层之间。 第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

公开(公告)号：US08450768B2

公开(公告)日：2013-05-28

申请号：US13335984

申请日：2011-12-23

申请人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

发明人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L2933/0091

摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

公开(公告)号：US08357557B2

公开(公告)日：2013-01-22

申请号：US12717537

申请日：2010-03-04

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/54

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20120187414A1

公开(公告)日：2012-07-26

申请号：US13439895

申请日：2012-04-05

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/22 ,  H01L33/30

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20120097640A1

公开(公告)日：2012-04-26

申请号：US13319928

申请日：2010-05-12

申请人： Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Yoshiaki Shirae ,  Tomohiro Yorisue ,  Akihiko Ikeda

发明人： Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Yoshiaki Shirae ,  Tomohiro Yorisue ,  Akihiko Ikeda

IPC分类号： C03C25/68 ,  C08L33/12 ,  C08K5/101 ,  B05D5/06 ,  C08K5/1535 ,  C08K5/07 ,  C08L25/06 ,  C08L53/00 ,  C08K5/3415

CPC分类号： C08L33/06 ,  C08F220/14 ,  C08F297/02 ,  C08L25/06 ,  C08L35/06 ,  C08L53/00 ,  C08L2205/03 ,  G03F7/0002 ,  H01L2933/0091 ,  C08L2666/02 ,  C08F212/08

摘要： Disclosed are: a resin composition for pattern formation, which enables the stable formation of a pattern at a level of the wavelength of light; a method for forming a pattern having a sea-island structure using the composition; and a process for producing a light-emitting element that can achieve high luminous efficiency properties. The resin composition for pattern formation comprises: (a) a specific block copolymer containing an aromatic ring-containing polymer and a poly(meth)acrylate as block moieties; (b) a homopolymer of a specific aromatic ring-containing polymer; and (c) a homopolymer of a specific poly(meth)acrylate, wherein the ratio of the total amount of the aromatic ring-containing homopolymer (b) and the poly(meth)acrylate homopolymer (c) relative to the entire resin composition is 0% by weight to 90% by weight, and the total amount of an aromatic ring-containing polymer moiety contained in the block copolymer (a) as a block moiety and the aromatic ring-containing homopolymer (b) relative to the entire resin composition is 10% by weight to 60% by weight.

摘要翻译： 公开了一种用于图案形成的树脂组合物，其能够在光的波长水平上稳定地形成图案; 使用该组合物形成具有海岛结构的图案的方法; 以及能够实现高发光效率的发光元件的制造方法。 用于图案形成的树脂组合物包括：（a）含有含芳环的聚合物和聚（甲基）丙烯酸酯作为嵌段部分的特定嵌段共聚物; （b）特定含芳环聚合物的均聚物; 和（c）特定聚（甲基）丙烯酸酯的均聚物，其中所述含芳环的均聚物（b）和聚（甲基）丙烯酸酯均聚物（c）的总量相对于整个树脂组合物的比例为 0重量％〜90重量％，作为嵌段部分的嵌段共聚物（a）中含有的含芳香环的聚合物部分和含芳环的均聚物（b）相对于树脂组合物的总量 为10重量％〜60重量％。

公开(公告)号：US09324914B2

公开(公告)日：2016-04-26

申请号：US12712693

申请日：2010-02-25

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0083

摘要： A semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and suitable for lighting instruments such as lights and lamps. The semiconductor device includes a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and penetrate through the metal electrode layer. The metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.

摘要翻译： 即使电力增加也能够保持高亮度强度的半导体发光装置，适用于灯具等照明装置。 半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。 开口的平均直径为10nm〜2μm，贯穿金属电极层。 金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

公开(公告)号：US08921887B2

公开(公告)日：2014-12-30

申请号：US13221319

申请日：2011-08-30

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/38

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

公开(公告)号：US20130075771A1

公开(公告)日：2013-03-28

申请号：US13412044

申请日：2012-03-05

申请人： Akira FUJIMOTO ,  Tsutomu NAKANISHI ,  Ryota KITAGAWA ,  Kenji NAKAMURA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

发明人： Akira FUJIMOTO ,  Tsutomu NAKANISHI ,  Ryota KITAGAWA ,  Kenji NAKAMURA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

IPC分类号： H01L33/10

CPC分类号： H01L33/30 ,  H01L33/10 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。 第一电极层具有具有通孔的金属部分。 第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。 第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。 第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。 发光层设置在第一和第二半导体层之间。 第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

公开(公告)号：US20120132948A1

公开(公告)日：2012-05-31

申请号：US13229972

申请日：2011-09-12

申请人： Shinji Nunotani ,  Masaaki Ogawa ,  Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Takanobu Kamakura

发明人： Shinji Nunotani ,  Masaaki Ogawa ,  Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Takanobu Kamakura

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.

摘要翻译： 根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。 发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。 第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。 第二电极层与第一半导体层电连接。 焊盘电极与第一电极层电连接。 辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。

公开(公告)号：US20120056155A1

公开(公告)日：2012-03-08

申请号：US13037990

申请日：2011-03-01

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/06 ,  H01L33/38 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.

摘要翻译： 半导体发光器件包括结构体，第一电极层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。 第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。 金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。 多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。 至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。