公开(公告)号：US5766346A

公开(公告)日：1998-06-16

申请号：US760959

申请日：1996-12-05

申请人： Toshirou Hayashi ,  Ryouji Hoshi ,  Izumi Fusegawa ,  Tomohiko Ohta

发明人： Toshirou Hayashi ,  Ryouji Hoshi ,  Izumi Fusegawa ,  Tomohiko Ohta

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/30 ,  C30B29/06 ,  C30B35/00

CPC分类号： C30B29/06 ,  C30B15/305 ,  Y10T117/10 ,  Y10T117/1032

摘要： An apparatus for producing a silicon single crystal by the MCZ method is disclosed in which electrodes and magnets are arranged so as to make such a condition that a line of magnetic force passing through the central axis of the crucible and a horizontal electric current which results from the supply of a direct current to the heater forms a counterclockwise angle of more than 0.degree. and less than 180.degree. on the basis of the condition where the direction of the line of magnetic force coincides with the direction of the horizontal electric current.

摘要翻译： 公开了一种通过MCZ方法制造单晶硅的装置，其中电极和磁体被布置成使得通过坩埚的中心轴线的磁力线和由坩埚的中心轴线产生的水平电流 基于磁力线的方向与水平电流的方向一致的条件，向加热器的直流电流形成大于0°且小于180°的逆时针角。

公开(公告)号：US5851283A

公开(公告)日：1998-12-22

申请号：US770499

申请日：1996-12-20

申请人： Ryouji Hoshi ,  Masashi Sonokawa ,  Izumi Fusegawa ,  Tomohiko Ohta

发明人： Ryouji Hoshi ,  Masashi Sonokawa ,  Izumi Fusegawa ,  Tomohiko Ohta

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B29/06 ,  C30B33/04 ,  C30B15/22

CPC分类号： C30B29/06 ,  C30B15/305 ,  Y10S117/917

摘要： A single crystal production apparatus based on an HMCZ method for production a large-diametered single crystal having a uniform microscopic oxygen concentration distribution in its crystal growth direction to thereby provide a wafer having a high in-plane uniformity of oxygen concentration distribution. In the single crystal production apparatus based on the HMCZ method, when B denotes a vertical position of the bottom surface of a melt within a crucible and L denotes the depth of the melt at the time of starting crystal pulling operation, a vertical position of the coil central axis Cc of superconducting electromagnets 12 and 15 is controlled to be a proper value included in a range from a position below the position B by {(1/3).times.L} to a position above the position B by {(1/3).times.L} to pull the single crystal. Thereby the intensity of a magnetic field applied to the melt in the vicinity of the interface of the crystal growth within the crucible is weakened to increase the degree of freedom of the convection of the melt, while the intensity of the magnetic field applied to the melt in the vicinity of the bottom part of the crucible is strengthened to suppress the convection.

摘要翻译： 一种基于HMCZ方法制造在其晶体生长方向上具有均匀的微观氧浓度分布的大直径单晶的单晶制造装置，从而提供具有高的氧浓度分布的面内均匀性的晶片。 在基于HMCZ法的单晶制造装置中，当B表示坩埚内的熔体的底面的垂直位置，L表示开始晶体拉拔操作时熔体的深度，垂直位置 将超导电磁体12和15的线圈中心轴Cc控制在从位置B以下位置{（+ E，fra 1/3 + EE）xL}到位置B以上的位置的范围内的适当值 通过{（+ E，fra 1/3 + EE）xL}拉动单晶。 因此，施加到坩埚内的晶体生长界面附近的熔体的磁场的强度被削弱，以增加熔体对流的自由度，同时施加到熔体的磁场的强度 在坩埚底部附近被加强以抑制对流。