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    ANTI-STICTION LAYER DEPOSITION
    1.
    发明申请
    ANTI-STICTION LAYER DEPOSITION 有权

    公开(公告)号：US20250145448A1

    公开(公告)日：2025-05-08

    申请号：US18387697

    申请日：2023-11-07

    Applicant: SPTS Technologies Limited

    Inventor： Michael Grimes ,  Yuyuan Lin

    IPC: B81B3/00 ,  B81C1/00

    Abstract: An anti-stiction layer is formed from a first organosilane precursor. A second organosilane precursor is introduced around the workpiece with the anti-stiction layer. The second organosilane precursor is different from the first organosilane precursor. The second organosilane precursor is configured to eliminate defect sites and unreacted sites on the anti-stiction layer and on a surface of the workpiece that includes the anti-stiction layer.

    Semiconductor wafer dicing process
    2.
    发明授权
    Semiconductor wafer dicing process 有权

    公开(公告)号：US12100619B2

    公开(公告)日：2024-09-24

    申请号：US17093597

    申请日：2020-11-09

    Applicant: SPTS Technologies Limited

    Inventor： Martin Hanicinec ,  Janet Hopkins ,  Oliver Ansell

    IPC: H01L21/78 ,  H01L21/3065 ,  H01L21/67

    CPC classification number: H01L21/78 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67092

    Abstract: A semiconductor wafer dicing process is disclosed for dicing a wafer into individual dies, each die comprising one integrated circuit. The process comprises: disposing a coating upon the wafer; removing at least a portion of the coating to expose regions of the wafer, along which the wafer is to be diced, to form a workpiece; disposing the workpiece upon a platen within a processing chamber; plasma treating the workpiece with a set of plasma treatment conditions to etch a portion of the exposed regions of the wafer to form a wafer groove which extends laterally beneath the coating to form an undercut; and plasma etching the workpiece with a set of plasma etch conditions, which are different to the plasma treatment conditions, to etch through the wafer and dice the wafer along the wafer groove.

    Method of Plasma Etching
    3.
    发明公开
    Method of Plasma Etching 审中-公开

    公开(公告)号：US20240213030A1

    公开(公告)日：2024-06-27

    申请号：US18375009

    申请日：2023-09-29

    Applicant: SPTS Technologies Limited

    Inventor： Binte Kazemi Samira

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/67

    CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01L21/3081 ,  H01L21/67069 ,  H01J2237/3341

    Abstract: An additive-containing aluminium nitride film is plasma etched. The additive-containing aluminium nitride film contains an additive element selected from scandium (Sc), yttrium (Y) or erbium (Er). A plasma is established within the chamber to plasma etch the additive-containing aluminium nitride film exposed within the trench. A ratio of the inert diluent gas flow rate to the sum of the BCl3 and Cl2 flow rates is in the range 0.45:1 to 0.75:1 and a ratio of the BCl3 flow rate to the Cl2 flow rate is in the range 0.75:1 to 1.25:1.

    Method of Plasma Etching
    7.
    发明公开
    Method of Plasma Etching 审中-公开

    公开(公告)号：US20230170188A1

    公开(公告)日：2023-06-01

    申请号：US17983341

    申请日：2022-11-08

    Applicant: SPTS Technologies Limited

    Inventor： Alex Huw Wood ,  Kevin Riddell ,  Huma Ashraf ,  Janet Hopkins

    IPC: H01J37/32

    CPC classification number: H01J37/32449 ,  H01J37/32816 ,  H01J2237/3343 ,  H01J2237/182 ,  H01J37/321

    Abstract: An additive-containing aluminium nitride film is plasma etched. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium or erbium. A workpiece is placed upon a platen within a plasma chamber. The workpiece includes a substrate having an additive-containing aluminium nitride film deposited thereon and a mask disposed upon the additive-containing aluminium nitride film, which defines at least one trench. A first etching gas is introduced into the chamber with a first flow rate, a second etching gas is introduced into the chamber with a second flow rate, and a plasma is established within the chamber to etch the additive-containing aluminium nitride film exposed within the trench. The first etching gas comprises boron trichloride and the second etching gas comprises chlorine. A ratio of the first flow rate to the second flow rate is greater than or equal to 1:1.

    Spin Rinse Dryer with Improved Drying Characteristics
    8.
    发明申请
    Spin Rinse Dryer with Improved Drying Characteristics 有权

    公开(公告)号：US20220155011A1

    公开(公告)日：2022-05-19

    申请号：US17510333

    申请日：2021-10-25

    Applicant: SPTS Technologies Limited

    Inventor： Trevor THOMAS ,  Martin Ayres

    IPC: F26B5/08 ,  F26B11/18 ,  F26B25/10

    Abstract: A spin rinse dryer for treating a substrate has an enclosure, a rotatable support for supporting the substrate, a rotatable member located within the enclosure above the rotatable support, and a drive for rotating the rotatable member. During cleaning of the wafer, liquid that splashes up from the wafer will strike the rotatable member, rather than the upper wall of the enclosure, and may form droplets on the rotatable member. After the flow of cleaning liquid has stopped, the drive can rotate the rotatable member at high speed, which tends to throw the liquid droplets off the rotatable member through centrifugal force. The liquid then runs down the walls of the enclosure, away from the wafer, so that there is a much reduced chance of contamination of the cleaned wafer. The rotatable member and support may be integrally formed and rotated together or may be separate members.

    Method of forming a passivation layer on a substrate
    9.
    发明授权
    Method of forming a passivation layer on a substrate 有权

    公开(公告)号：US10655217B2

    公开(公告)日：2020-05-19

    申请号：US15968433

    申请日：2018-05-01

    Applicant: SPTS TECHNOLOGIES LIMITED

    Inventor： Michael Grimes ,  Yuyuan Lin

    IPC: C23C16/02 ,  B05D1/00 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H05K3/28

    Abstract: A method of forming a passivation layer on a substrate includes providing a substrate in a processing chamber. The substrate includes a metallic surface which is a copper, tin or silver surface, or an alloyed surface of one or more of copper, tin or silver. The method further includes depositing at least one organic layer onto the metallic surface by vapour deposition, the organic layer formed from an organic precursor. The organic precursor includes a first functional group including at least one of oxygen, nitrogen, phosphorus, sulphur, selenium, tellurium, or silicon, and a second functional group selected from hydroxyl (—OH) or carboxyl (—COOH). The first functional group is adsorbed onto the metallic surface. The method further includes depositing at least one inorganic layer onto the organic layer by vapour deposition, wherein the second functional group acts as an attachment site for the inorganic layer.

    METHOD OF PLASMA ETCHING
    10.
    发明申请
    METHOD OF PLASMA ETCHING 审中-公开

    公开(公告)号：US20190393044A1

    公开(公告)日：2019-12-26

    申请号：US16447851

    申请日：2019-06-20

    Applicant: SPTS Technologies Limited

    Inventor： HUMA ASHRAF ,  KEVIN RIDDELL ,  ALEX WOOD

    IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67

    Abstract: According to the invention there is provided a method of plasma etching a silicon-based compound semiconductor substrate, the method comprising providing the substrate within an etch chamber and performing a cyclical process on the substrate, each cycle comprising supplying an etchant gas into the chamber, energising the gas into a plasma, and performing an etch step on the substrate using the plasma; and performing a desorption step, wherein during the desorption step, the only gas that is supplied into the etch chamber is an inert gas, so as to allow reactive species that have adsorbed to the surface of the substrate during the etch step to desorb from the surface of the substrate.

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