公开(公告)号：US20060060300A1

公开(公告)日：2006-03-23

申请号：US11274321

申请日：2005-11-16

申请人： Kazue Takahashi ,  Saburo Kanai ,  Yoshiaki Satou ,  Takazumi Ishizu

发明人： Kazue Takahashi ,  Saburo Kanai ,  Yoshiaki Satou ,  Takazumi Ishizu

IPC分类号： H01L21/306

CPC分类号： C23F4/00 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/3322 ,  H01L21/32136 ,  H01L21/6875

摘要： A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.

公开(公告)号：US20060042757A1

公开(公告)日：2006-03-02

申请号：US10927095

申请日：2004-08-27

申请人： Seiichiro Kanno ,  Manabu Edamura ,  Ryujiro Udo ,  Masatsugu Arai ,  Junichi Tanaka ,  Saburo Kanai ,  Ryoji Nishio ,  Tsunehiko Tsubone ,  Toru Aramaki

发明人： Seiichiro Kanno ,  Manabu Edamura ,  Ryujiro Udo ,  Masatsugu Arai ,  Junichi Tanaka ,  Saburo Kanai ,  Ryoji Nishio ,  Tsunehiko Tsubone ,  Toru Aramaki

IPC分类号： C23F1/00

CPC分类号： H01L21/67248 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109

摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.

摘要翻译： 在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。 调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。 在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理 可以通过执行所选择的处理来减少批次内的晶片温度变化。 所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

公开(公告)号：US06243251B1

公开(公告)日：2001-06-05

申请号：US09382779

申请日：1999-08-25

申请人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

发明人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

IPC分类号： H02N1300

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck includes a pair of electrodes having different polarities, and a dielectric film, formed on top surfaces of the pair of electrodes, on which a sample to be electrostatically attracted and held when a DC voltage is applied between the pair of electrodes, wherein the respective amounts of electric charges stored on attracting portions of the dielectric film corresponding to the pair of electrodes, directly before stopping supply of the DC voltage applied between the pair of electrodes, are substantially equal to each other. With this chuck, the electric charges stored on the attracting portions of the dielectric film after stopping supply of the DC voltage can be eliminated due to the balance between the electric charges having different polarities. The electrostatic chuck is subjected to a significantly reduced residual attracting force.

摘要翻译： 静电卡盘包括具有不同极性的一对电极和形成在一对电极的顶表面上的电介质膜，当在一对电极之间施加直流电压时，待静电吸引并保持的样品，其中 在停止施加在该对电极之间的直流电压的供给之前，直接在与该对电极对应的电介质膜的吸引部分上存储的电荷的相应量基本相等。 利用该卡盘，可以通过在极性不同的电荷之间的平衡来消除在停止供给直流电压之后存储在电介质膜的吸引部分上的电荷。 静电吸盘受到显着降低的残留吸引力。

公开(公告)号：US06235146B1

公开(公告)日：2001-05-22

申请号：US09313253

申请日：1999-05-18

申请人： Masanori Kadotani ,  Saburo Kanai ,  Youichi Itou ,  Takashi Fujii ,  Hironobu Kawahara ,  Ryouji Hamasaki ,  Kazue Takahashi ,  Motohiko Yoshigai

发明人： Masanori Kadotani ,  Saburo Kanai ,  Youichi Itou ,  Takashi Fujii ,  Hironobu Kawahara ,  Ryouji Hamasaki ,  Kazue Takahashi ,  Motohiko Yoshigai

IPC分类号： H01L2100

CPC分类号： H01L21/67023 ,  H01J2237/2001 ,  Y10S156/914

摘要： A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni—Al) between the materials.

摘要翻译： 具有静电吸引装置的阶段适用于在真空处理系统中在高温下进行晶片处理。 在具有设置在处理室中的阶段的真空处理系统中，其在低压气氛中将物体静电吸引到工作台上，并且通过加热工作台在高温下处理物体，所述工作台的电极构件由钛制成 或者在电极部件上形成钛合金和静电吸引用的电介质膜。 为了牢固地结合钛和氧化铝陶瓷，期望在材料之间夹着镍合金（Ni-Al）。

公开(公告)号：US20050236109A1

公开(公告)日：2005-10-27

申请号：US11156477

申请日：2005-06-21

申请人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

发明人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

IPC分类号： C23F1/00 ,  H01J37/32

CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022

摘要： A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.

摘要翻译： 等离子体处理装置包括真空处理室，具有第一电源的等离子体产生单元，气体供给单元，具有用于将样品保持在真空处理室中的样品台表面的下部电极和真空泵送单元。 该设备还包括设置在与样品台表面相对的位置处的板，与板接触设置的盘导电体，用于向盘导电体施加RF频率偏置功率的第二电源，以及用于控制 板的温度达到预定值。 该板由高纯度的硅或碳制成，盘导电体和板具有多个孔，用于将来自气体供应单元的处理气体引入真空处理室。

公开(公告)号：US06499424B2

公开(公告)日：2002-12-31

申请号：US09909879

申请日：2001-07-23

申请人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

发明人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

IPC分类号： H05H100

CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/321

摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

公开(公告)号：US06482747B1

公开(公告)日：2002-11-19

申请号：US09218038

申请日：1998-12-22

申请人： Kazue Takahashi ,  Saburo Kanai ,  Yoshiaki Satou ,  Takazumi Ishizu

发明人： Kazue Takahashi ,  Saburo Kanai ,  Yoshiaki Satou ,  Takazumi Ishizu

IPC分类号： H01L213065

CPC分类号： C23F4/00 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/3322 ,  H01L21/32136 ,  H01L21/6875

摘要： Plasma treatment apparatus and method in which an influence on the treatment characteristics of reaction products in plasma treatment such as etching is offset, thereby enabling uniform treatment characteristics to be obtained in the plane of a substrate are provided. In a plasma treatment method of treating a substrate to be processed by using a gas plasma via a mask in a treatment chamber, plasma treatment is performed while optimizing an amount of deposition of a side wall protection layer, equalizing the optimized deposition amount in the center of the substrate and that in a peripheral part, and maintaining the uniformity in the plane of the side wall protection layer.

摘要翻译： 提供了等离子体处理装置和方法，其中对诸如蚀刻的等离子体处理中的反应产物的处理特性的影响被偏移，从而能够在基板的平面中获得均匀的处理特性。 在处理室中经由掩模使用气体等离子体处理待处理基板的等离子体处理方法中，在优化侧壁保护层的沉积量的同时进行等离子体处理，使中心的最佳沉积量均匀化 并且保持在侧壁保护层的平面中的均匀性。

公开(公告)号：US06373681B1

公开(公告)日：2002-04-16

申请号：US09833557

申请日：2001-04-13

申请人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

发明人： Seiichiro Kanno ,  Tatehito Usui ,  Ken Yoshioka ,  Saburo Kanai ,  Youichi Itou

IPC分类号： H02N1300

摘要： A sample processing method includes electrostatically attracting and holding a sample on an electrostatic chuck which includes a pair of electrodes having different polarities and being concentrically disposed, and a dielectric film formed on top surfaces of the pair of electrodes, by applying a DC voltage between the pair of electrodes. The sample which is attracted and held on the chuck through the dielectric film is subjected to plasma processing while applying a bias voltage. The application of the bias voltage applied during plasma processing is stopped after termination of processing the sample, and an unbalance between electric charges stored on attracting portions of the dielectric film formed on the electrodes is eliminated by continuing generation of the plasma for a specific time after stopping the application of the bias voltage. The plasma is extinguished after an elapse of the specific time.

公开(公告)号：US6156663A

公开(公告)日：2000-12-05

申请号：US721732

申请日：1996-09-27

申请人： Katsuya Watanabe ,  Saburo Kanai ,  Ryoji Hamasaki ,  Tsuyoshi Yoshida ,  Yutaka Omoto ,  Masayuki Kojima ,  Syunji Sasabe ,  Tadamitsu Kanekiyo ,  Takazumi Ishizu

发明人： Katsuya Watanabe ,  Saburo Kanai ,  Ryoji Hamasaki ,  Tsuyoshi Yoshida ,  Yutaka Omoto ,  Masayuki Kojima ,  Syunji Sasabe ,  Tadamitsu Kanekiyo ,  Takazumi Ishizu

IPC分类号： H01J37/32 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32477 ,  C23F4/00 ,  H01J37/32192 ,  H01L21/32136

摘要： Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.

摘要翻译： 提供了一种通过电磁波产生等离子体来处理样品的方法，其中在用作放电区域的真空容器中设置含有碳的材料，例如碳化硅（Sic）。 通过使用片式干蚀刻装置通过O 2清洗处理来清洁蚀刻室的内部，并且在设置和控制蚀刻室的内壁温度之后，将样品输送到蚀刻室中，并且将TiN盖层 ，通过使用具有抗蚀剂膜的图案的BCl 3 / Cl 2 / CH 4 / Ar气体作为掩模，依次等离子体蚀刻Al-Cu合金层和TiN阻挡层。

公开(公告)号：US5914051A

公开(公告)日：1999-06-22

申请号：US443438

申请日：1995-05-18

申请人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata

发明人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata

IPC分类号： H01J37/32 ,  H01L21/302 ,  B65D6/34 ,  C23F1/02

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

摘要： A microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed. The temperature of the electric discharge block is controlled to decrease an amount of plasma polymers deposited on the electric discharge block, increase an amount existing in the plasma and increase an amount deposited on the sample to improve a selection ratio.

摘要翻译： 一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于对诸如半导体装置 基板，蚀刻工艺，成膜工艺等。微波仅与其行进方向相对应地被引入放电装置，由此等离子体密度分布的均匀性对应于待处理的表面 样品可以急剧增强，使得通过利用这种等离子体处理的样品可以在待处理的表面内获得增强的处理均匀性。 控制放电块的温度以减少沉积在放电块上的等离子聚合物的量，增加存在于等离子体中的量并增加沉积在样品上的量以提高选择比。