公开(公告)号：US08350311B2

公开(公告)日：2013-01-08

申请号：US12975406

申请日：2010-12-22

申请人： Yoshiyuki Kaneko ,  Hiroyasu Noso ,  Katsuhiko Hotta ,  Shinichi Ishida ,  Hidenori Suzuki ,  Sadayoshi Tateishi

发明人： Yoshiyuki Kaneko ,  Hiroyasu Noso ,  Katsuhiko Hotta ,  Shinichi Ishida ,  Hidenori Suzuki ,  Sadayoshi Tateishi

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L21/7684 ,  H01L21/76804 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in an insulating film over the main surface of a semiconductor substrate; and the upper electrode is comprised of a film stack of a TiN film (lower metal film) and a Ti film (cap metal film) formed over the TiN film (lower metal film).

摘要翻译： 本发明提供了能够提供具有提高的可靠性的具有MIM结构电容器的半导体器件的技术。 电容器具有下电极，电容器绝缘膜和上电极。 下部电极由在半导体衬底的主表面上形成绝缘膜的电极槽中嵌入的金属膜构成; 上电极由TiN膜（下金属膜）和形成在TiN膜（下金属膜）上的Ti膜（帽金属膜）的膜叠层构成。

公开(公告)号：US20110156208A1

公开(公告)日：2011-06-30

申请号：US12975406

申请日：2010-12-22

申请人： Yoshiyuki KANEKO ,  Hiroyasu Noso ,  Katsuhiko Hotta ,  Shinichi Ishida ,  Hidenori Suzuki ,  Sadayoshi Tateishi

发明人： Yoshiyuki KANEKO ,  Hiroyasu Noso ,  Katsuhiko Hotta ,  Shinichi Ishida ,  Hidenori Suzuki ,  Sadayoshi Tateishi

IPC分类号： H01L29/92

CPC分类号： H01L21/7684 ,  H01L21/76804 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in an insulating film over the main surface of a semiconductor substrate; and the upper electrode is comprised of a film stack of a TiN film (lower metal film) and a Ti film (cap metal film) formed over the TiN film (lower metal film).

摘要翻译： 本发明提供了能够提供具有提高的可靠性的具有MIM结构电容器的半导体器件的技术。 电容器具有下电极，电容器绝缘膜和上电极。 下部电极由在半导体衬底的主表面上形成绝缘膜的电极槽中嵌入的金属膜构成; 上电极由TiN膜（下金属膜）和形成在TiN膜（下金属膜）上的Ti膜（帽金属膜）的膜叠层构成。