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    AUGMENTING THE FUNCTIONALITY OF NON-DIGITAL OBJECTS USING A DIGITAL GLOVE
    1.
    发明申请
    AUGMENTING THE FUNCTIONALITY OF NON-DIGITAL OBJECTS USING A DIGITAL GLOVE 审中-公开

    公开(公告)号：US20200174567A1

    公开(公告)日：2020-06-04

    申请号：US16207973

    申请日：2018-12-03

    申请人： Christian KLEIN ,  Andrew Stuart GLASS ,  Sang Ho YOON

    发明人： Christian KLEIN ,  Andrew Stuart GLASS ,  Sang Ho YOON

    IPC分类号： G06F3/01 ,  G06N20/00 ,  G06F3/0484 ,  G06F3/0354

    摘要： The disclosed technologies address technical problems, including improving human-computer interaction, by augmenting the functionality provided by non-digital objects using a digital glove. To provide this functionality, a machine learning model is trained using sensor data generated by sensors in a digital glove and data generated by a user input device while the digital glove is utilized to manipulate an object like a user input device. Once trained, the machine learning model can take sensor data generated by a digital glove while manipulating a non-digital object and generate virtual user input device data that can be utilized to control a host computer. A digital glove can also be utilized to perform selection operations using non-digital objects when pressure data generated by one or more of the pressure sensors in the digital glove indicates that pressure was exerted at a finger of the digital glove in excess of a threshold value.

    Semiconductor light emitting device
    4.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US07687818B2

    公开(公告)日：2010-03-30

    申请号：US12177517

    申请日：2008-07-22

    申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

    发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/405

    摘要： There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.

    摘要翻译： 提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。 根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。 这里，反射电极包括： 第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层 并且具有比所产生的光的波长更大的厚度。

    METHOD OF MANUFACTURING GALLIUM NITRIDE BASED LIGHT EMITTING DIODE HAVING SURFACE IRREGULARITIES
    5.
    发明申请
    METHOD OF MANUFACTURING GALLIUM NITRIDE BASED LIGHT EMITTING DIODE HAVING SURFACE IRREGULARITIES 审中-公开
    制造具有表面不规则性的基于氮化镓的发光二极管的方法

    公开(公告)号：US20090258454A1

    公开(公告)日：2009-10-15

    申请号：US12490891

    申请日：2009-06-24

    申请人： Dae Yeon KIM ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

    发明人： Dae Yeon KIM ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

    IPC分类号： H01L21/20 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/44

    摘要： An n-type GaN layer is formed on a substrate, and an active layer is formed on the n-type GaN layer. A p-type GaN layer is formed on the active layer, and portions of the p-type GaN layer and the active layer are mesa-etched so as to expose a portion of the n-type GaN layer. An irregularities forming layer is formed on the p-type GaN layer and a photosensitive film pattern for forming a surface irregularities pattern is formed on the irregularities forming layer. The irregularities forming layer is selectively wet-etched by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities. A p-electrode is formed on the p-type GaN layer having the surface irregularities formed thereon, and an n-electrode is formed on the exposed n-type GaN layer.”

    摘要翻译： 在衬底上形成n型GaN层，在n型GaN层上形成有源层。 在有源层上形成p型GaN层，并且对p型GaN层和有源层的部分进行台面蚀刻，以暴露n型GaN层的一部分。 在p型GaN层上形成凹凸形成层，在凹凸形成层上形成用于形成表面凹凸图案的感光膜图案。 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则。 在其上形成有表面凹凸的p型GaN层上形成p电极，在暴露的n型GaN层上形成n电极。

    VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    垂直氮化物半导体发光二极管及其制造方法

    公开(公告)号：US20080042149A1

    公开(公告)日：2008-02-21

    申请号：US11692568

    申请日：2007-03-28

    申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

    发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

    摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

    摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

    Method of manufacturing gallium nitride based light emitting diode
    8.
    发明申请
    Method of manufacturing gallium nitride based light emitting diode 审中-公开
    制造氮化镓基发光二极管的方法

    公开(公告)号：US20070184568A1

    公开(公告)日：2007-08-09

    申请号：US11646406

    申请日：2006-12-28

    申请人： Dae Yeon Kim ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

    发明人： Dae Yeon Kim ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/44

    摘要： Provided a method of manufacturing a GaN-based LED comprising forming an n-type GaN layer on a substrate; forming an active layer on the n-type GaN layer; forming a p-type GaN layer on the active layer; mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer; forming an irregularities forming layer on the p-type GaN layer; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and forming an n-electrode on the exposed n-type GaN layer.

    摘要翻译： 提供一种制造GaN基LED的方法，包括在衬底上形成n型GaN层; 在n型GaN层上形成有源层; 在有源层上形成p型GaN层; 蚀刻p型GaN层和有源层的部分，以暴露n型GaN层的一部分; 在p型GaN层上形成凹凸形成层; 形成用于在所述凹凸形成层上形成表面凹凸图案的感光膜图案; 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则; 在其上形成有表面凹凸的p型GaN层上形成p电极; 以及在暴露的n型GaN层上形成n电极。

    Method for effectuating half-pixel motion compensation in decoding an image signal
    9.
    发明授权
    Method for effectuating half-pixel motion compensation in decoding an image signal 失效
    在解码图像信号时实现半像素运动补偿的方法

    公开(公告)号：US5532747A

    公开(公告)日：1996-07-02

    申请号：US308237

    申请日：1994-09-19

    申请人： Sang-Ho Yoon ,  Oh-Sang Kwon

    发明人： Sang-Ho Yoon ,  Oh-Sang Kwon

    IPC分类号： H04N19/50 ,  G06T9/00 ,  H04N19/423 ,  H04N19/44 ,  H04N19/46 ,  H04N19/503 ,  H04N19/51 ,  H04N19/523 ,  H04N19/59 ,  H04N19/60 ,  H04N19/61 ,  H04N19/70 ,  H04N19/91 ,  H04N7/50

    CPC分类号： H04N19/523

    摘要： A method for decoding an encoded image signal supplied in the form of a series of encoded image frames, each of the encoded image frames being divided into a multiplicity of macroblocks of pixels, each of the macroblocks having an associated half-pixel resolution motion vector which represents a translatory motion of the macroblock between a present and its preceding frames of the encoded image signal to a half-pixel accuracy, comprises: providing differential pixels of a differential macroblock in a first predetermined scanning order by performing entropy decoding, inverse quantization and inverse transformation on the pixels in each macroblock of the present frame; scanning the differential pixels so as to provide scan converted differential pixels of a scan converted differential macroblock in a second predetermined scanning order; providing half-pixel resolution pixels of a half-pixel resolution macroblock in the second predetermined scanning order by accessing, under a control of the half-pixel resolution motion vector, the pixels in the previous frame in an order corresponding to the second predetermined scanning order and, depending on the half-pixel resolution motion vector, performing a spatial interpolation on the pixels in the previous frame; and adding, on a pixel-by-pixel basis, the scan converted differential macroblock to the half-pixel resolution macroblock, to thereby form a reconstructed macroblock of the present frame.

    摘要翻译： 一种用于解码以一系列编码图像帧的形式提供的编码图像信号的方法，每个编码图像帧被分成多个像素宏块，每个宏块具有相关联的半像素分辨率运动矢量，其中， 表示在编码图像信号的当前帧和其前一帧之间的宏块的平移运动为半像素精度，包括：通过执行熵解码，逆量化和反演来提供第一预定扫描顺序的差分宏块的差分像素 对当前帧的每个宏块中的像素进行变换; 扫描差分像素，以便以第二预定扫描顺序提供扫描转换的差分宏块的扫描转换的差分像素; 通过在半像素分辨率运动矢量的控制下，以与第二预定扫描顺序对应的顺序访问前一帧中的像素，提供第二预定扫描顺序的半像素分辨率宏块的半像素分辨率像素 并且根据半像素分辨率运动矢量，对前一帧中的像素执行空间插值; 并且在逐像素的基础上将扫描转换的差分宏块添加到半像素分辨率宏块，从而形成本帧的重建宏块。

    Fuel cell system having fuel circulation structure, method of operating the same, and electronic apparatus including the fuel cell system
    10.
    发明授权
    Fuel cell system having fuel circulation structure, method of operating the same, and electronic apparatus including the fuel cell system 有权
    具有燃料循环结构的燃料电池系统，其操作方法以及包括燃料电池系统的电子设备

    公开(公告)号：US08993196B2

    公开(公告)日：2015-03-31

    申请号：US12645694

    申请日：2009-12-23

    申请人： Young-soo Joung ,  Hye-jung Cho ,  Sang-ho Yoon

    发明人： Young-soo Joung ,  Hye-jung Cho ,  Sang-ho Yoon

    IPC分类号： H01M8/04 ,  H01M8/02 ,  H01M8/10

    CPC分类号： H01M8/04208 ,  H01M8/04097 ,  H01M8/04753 ,  H01M8/1011 ,  Y02E60/50 ,  Y02E60/523

    摘要： In a fuel cell system including a fuel cartridge and a fuel supply module, the fuel cartridge includes at least two ports, wherein a first port from among the at least two ports is a fuel inlet port and a second port from among the at least two ports is a fuel outlet port. The fuel cartridge may also include a fuel pouch or the fuel cartridge itself may be the fuel pouch. The fuel supply module may include a fuel circulation structure that circulates the fuel before the fuel is supplied to the stack. The fuel cell system may be equipped with an electronic apparatus and serve as a source of power.

    摘要翻译： 在包括燃料盒和燃料供应模块的燃料电池系统中，燃料盒包括至少两个端口，其中，所述至少两个端口中的第一端口是燃料入口和从所述至少两个端口中的第二端口 端口是燃料出口。 燃料盒也可以包括燃料袋，或者燃料盒本身可以是燃料袋。 燃料供给模块可以包括燃料循环结构，其在将燃料供应到堆叠之前循环燃料。 燃料电池系统可以配备有电子设备并用作电源。