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    BAG WITH ANTI-THEFT FUNCTION CROSS REFERENCE TO RELATED APPLICATION
    2.
    发明申请
    BAG WITH ANTI-THEFT FUNCTION CROSS REFERENCE TO RELATED APPLICATION 审中-公开
    具有抗函数功能的袋子相关申请的交叉引用

    公开(公告)号：US20150351513A1

    公开(公告)日：2015-12-10

    申请号：US14297560

    申请日：2014-06-05

    申请人： Sang II PARK

    发明人： Sang II PARK

    IPC分类号： A45C13/18

    CPC分类号： A45C13/18 ,  A45C13/20 ,  E05B65/52 ,  E05B73/0005 ,  G08B13/14 ,  G08B13/149

    摘要： Disclosed herein is a bag with an anti-theft function which is used to temporarily store various valuables (a wallet, a cellular phone, a camera, a watch, etc.) or clothes in a crowded place, for example, a water play area such as a beach or a water park, and is configured such that the stored valuables or the bag itself can be prevented from being stolen. The bag according to the present invention includes an anti-theft means which fastens first and second zippers that openably close an opening of the bag body to each other and binds the bag body to a surrounding structure, whereby valuables (a wallet, a cellular phone, a camera, a watch, etc.) stored in the bag body not only can be prevented from being stolen but the bag itself can also be prevented from being stolen because it is bound to the surrounding structure.

    摘要翻译： 本文公开了一种具有防盗功​​能的袋子，其用于临时存储各种贵重物品（钱包，手机，相机，手表等）或衣服在拥挤的地方，例如水上游乐区域 例如海滩或水上公园，并且被配置为使得可以防止存储的贵重物品或袋本身被盗。 根据本发明的袋包括防盗装置，其将第一和第二拉链紧固，所述拉链可打开地将袋体的开口彼此靠近并且将袋体绑定到周围结构，由此贵重物品（钱包，蜂窝电话 ，相机，手表等）不仅可以防止被盗，而且还可以防止袋本身因为与周围结构的束缚而被盗。

    Semiconductor memory device
    3.
    发明申请
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US20080080288A1

    公开(公告)日：2008-04-03

    申请号：US11819789

    申请日：2007-06-29

    申请人： Sang-II Park ,  Saeng-Hwan Kim

    发明人： Sang-II Park ,  Saeng-Hwan Kim

    IPC分类号： G11C5/14

    CPC分类号： G11C5/145 ,  G11C11/406 ,  G11C11/4074 ,  G11C2211/4067 ,  G11C2211/4068

    摘要： A semiconductor memory device includes: a plurality of cell array blocks; a boosted voltage driving unit for selectively supplying a boosted voltage to the cell array blocks; and a controller controlling a driving operation of the boosted voltage driving unit in response to a cell array block select signal.

    摘要翻译： 半导体存储器件包括：多个单元阵列块; 升压电压驱动单元，用于选择性地向所述单元阵列块提供升压电压; 以及控制器，其响应于单元阵列块选择信号来控制升压电压驱动单元的驱动操作。

    Method of manufacturing flat panel display device
    4.
    发明授权
    Method of manufacturing flat panel display device 有权
    制造平板显示装置的方法

    公开(公告)号：US06805602B2

    公开(公告)日：2004-10-19

    申请号：US10662393

    申请日：2003-09-16

    申请人： Woo-Young So ,  Kyung-Jin Yoo ,  Sang-II Park

    发明人： Woo-Young So ,  Kyung-Jin Yoo ,  Sang-II Park

    IPC分类号： H01J924

    CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/32 ,  H01L29/78621

    摘要： A flat panel display device with improved electrical characteristics and a simplified manufacturing process is disclosed. The device includes a semiconductor layer formed on an insulating substrate; source and drain electrodes directly contacting both end portions of the semiconductor layer, respectively; a pixel electrode having an opening portion formed thereon; a first insulating layer formed over the remaining portion of the insulating substrate except for the opening portion; a gate electrode formed on a portion of the first insulating layer over the semiconductor layer; and source and drain regions formed in both end portions of the semiconductor layer.

    摘要翻译： 公开了一种具有改善的电气特性和简化制造工艺的平板显示装置。 该器件包括形成在绝缘衬底上的半导体层; 源极和漏极分别直接接触半导体层的两个端部; 形成有开口部的像素电极; 除了所述开口部之外，形成在所述绝缘基板的剩余部分上的第一绝缘层; 形成在半导体层上的第一绝缘层的一部分上的栅电极; 以及形成在半导体层的两个端部中的源极和漏极区域。

    SEMICONDUCTOR MEMORY APPARATUS
    6.
    发明申请
    SEMICONDUCTOR MEMORY APPARATUS 有权
    半导体存储器

    公开(公告)号：US20090251985A1

    公开(公告)日：2009-10-08

    申请号：US12483482

    申请日：2009-06-12

    申请人： Sang II PARK ,  Shin Ho CHU

    发明人： Sang II PARK ,  Shin Ho CHU

    IPC分类号： G11C5/14 ,  G11C7/00

    CPC分类号： G11C5/145 ,  H01L25/0657 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2225/06568 ,  H01L2924/15311

    摘要： A first signal input circuit outputs a first control signal in response to self-refresh and active signals. A second signal input circuit outputs a second control signal in response to the self-refresh and active signals. The power supply circuit applies a first supply voltage to an output terminal in response to the first control signal. An elevated voltage generator generates a elevated voltage by pumping a second supply voltage, and applies the elevated voltage to the output terminal, in response to the first and second control signals.

    摘要翻译： 响应于自刷新和有效信号，第一信号输入电路输出第一控制信号。 第二信号输入电路响应于自刷新和有效信号而输出第二控制信号。 电源电路响应于第一控制信号向输出端施加第一电源电压。 升高的电压发生器通过泵浦第二电源电压产生升高的电压，并且响应于第一和第二控制信号将升高的电压施加到输出端子。

    Flat panel display and method of fabricating the same
    7.
    发明申请
    Flat panel display and method of fabricating the same 有权
    平板显示器及其制造方法

    公开(公告)号：US20050029926A1

    公开(公告)日：2005-02-10

    申请号：US10901096

    申请日：2004-07-29

    申请人： Sang-II Park ,  Jae-Bon Koo ,  Hun-Jung Lee

    发明人： Sang-II Park ,  Jae-Bon Koo ,  Hun-Jung Lee

    IPC分类号： H05B33/02 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/00 ,  H05B33/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

    CPC分类号： H01L27/3244 ,  H01L51/5284 ,  H01L2251/5346

    摘要： A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.

    摘要翻译： 其发光显示装置包括其上形成有薄膜晶体管的绝缘基板。 薄膜晶体管包括源电极和/或漏电极。 钝化层在薄膜晶体管的至少一部分上形成在绝缘基板上，并且在其中形成有与孔电极或漏电极电接触的通孔。 像素电极形成在通孔中。 除了对应于像素电极的区域之外，在钝化层的整个上表面上形成遮光层。 除了与像素电极对应的区域之外，在遮光层的上表面上形成平坦化层。