METHOD OF MANUFACTURING A MAGNETORESISTIVE DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING A MAGNETORESISTIVE DEVICE 审中-公开
    制造磁阻器件的方法

    公开(公告)号:US20140212993A1

    公开(公告)日:2014-07-31

    申请号:US14170100

    申请日:2014-01-31

    CPC classification number: H01L43/12

    Abstract: A method of manufacturing a magnetoresistive-based device includes etching a hard mask layer, the etching having a selectivity greater than 2:1 and preferably less than 5:1 of the hard mask layer to a photo resist thereover. Optionally, the photo resist is trimmed prior to the etch, and oxygen may be applied during or just subsequent to the trim of the photo resist to increase side shrinkage. An additional step includes an oxygen treatment during the etch to remove polymer from the structure and etch chamber.

    Abstract translation: 一种制造基于磁阻的器件的方法包括蚀刻硬掩模层,蚀刻具有大于硬掩模层的选择性大于2:1且优选小于5:1的光刻胶。 任选地,在蚀刻之前修整光致抗蚀剂,并且可以在光刻胶的修剪期间期间或之后施加氧气以增加侧收缩。 另外的步骤包括在蚀刻期间从结构和蚀刻室去除聚合物的氧处理。

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