利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

52 条记录 (耗时 0.022 秒)

    Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
    2.
    发明授权
    Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors 有权
    基于自旋滤波器效应的旋转晶体管，以及使用自旋晶体管的非易失性存储器

    公开(公告)号：US07671433B2

    公开(公告)日：2010-03-02

    申请号：US11979221

    申请日：2007-10-31

    申请人： Satoshi Sugahara ,  Masaaki Tanaka

    发明人： Satoshi Sugahara ,  Masaaki Tanaka

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

    摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

    摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

    Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors
    3.
    发明授权
    Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors 有权
    基于自旋滤波器效应的旋转晶体管和使用自旋晶体管的非易失性存储器

    公开(公告)号：US07423327B2

    公开(公告)日：2008-09-09

    申请号：US10522241

    申请日：2003-07-25

    申请人： Satoshi Sugahara ,  Masaaki Tanaka

    发明人： Satoshi Sugahara ,  Masaaki Tanaka

    IPC分类号： H01L29/02

    CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

    摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

    摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

    Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
    4.
    发明申请
    Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors 有权

    公开(公告)号：US20080067501A1

    公开(公告)日：2008-03-20

    申请号：US11979220

    申请日：2007-10-31

    申请人： Satoshi Sugahara ,  Masaaki Tanaka

    发明人： Satoshi Sugahara ,  Masaaki Tanaka

    IPC分类号： H01L29/82

    CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

    摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

    Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
    5.
    发明申请
    Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors 有权
    基于自旋滤波器效应的旋转晶体管，以及使用自旋晶体管的非易失性存储器

    公开(公告)号：US20080061336A1

    公开(公告)日：2008-03-13

    申请号：US11979221

    申请日：2007-10-31

    申请人： Satoshi Sugahara ,  Masaaki Tanaka

    发明人： Satoshi Sugahara ,  Masaaki Tanaka

    IPC分类号： H01L29/78

    CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

    摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

    摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

    Spin transistor using spin-filter effect and nonvolatile memory using spin transistor
    6.
    发明申请
    Spin transistor using spin-filter effect and nonvolatile memory using spin transistor 有权
    使用自旋滤波器效应的旋转晶体管和使用自旋晶体管的非易失性存储器

    公开(公告)号：US20060043443A1

    公开(公告)日：2006-03-02

    申请号：US10522241

    申请日：2003-07-25

    申请人： Satoshi Sugahara ,  Masaaki Tanaka

    发明人： Satoshi Sugahara ,  Masaaki Tanaka

    IPC分类号： H01L29/94

    CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

    摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

    摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

    Gallium nitride-based compound semiconductor chip and method for producing the same, and gallium nitride-based compound semiconductor wafer
    7.
    发明授权
    Gallium nitride-based compound semiconductor chip and method for producing the same, and gallium nitride-based compound semiconductor wafer 有权
    氮化镓系化合物半导体晶片及其制造方法以及氮化镓系化合物半导体晶片

    公开(公告)号：US06613461B1

    公开(公告)日：2003-09-02

    申请号：US09675813

    申请日：2000-09-28

    申请人： Satoshi Sugahara

    发明人： Satoshi Sugahara

    IPC分类号： C30B2938

    CPC分类号： H01L33/20 ,  C30B29/406 ,  C30B33/00 ,  H01L29/0657 ,  H01L33/0095 ,  Y10T428/24355 ,  Y10T428/26

    摘要： A gallium nitride-based compound semiconductor chip comprises a gallium nitride substrate having a (0001) facet of a wurtzite type crystal structure as a principal facet and a gallium nitride-based compound semiconductor crystal formed on the gallium nitride substrate, wherein: the gallium nitride-based compound semiconductor chip has a plurality of division facets and at least one of the plurality of division facets of the gallium nitride-based compound semiconductor chip is in a cleave facet direction of the gallium nitride substrate.

    摘要翻译： 氮化镓基化合物半导体芯片包括氮化镓衬底，该氮化镓衬底具有作为主面的纤锌矿型晶体结构的（0001）面和在氮化镓衬底上形成的氮化镓系化合物半导体晶体，其中：氮化镓 的化合物半导体芯片具有多个分割面，并且氮化镓系化合物半导体芯片的多个分割面的至少一个处于氮化镓基板的切割面方向。

    Semiconductor device and a method for producing the same
    8.
    发明授权
    Semiconductor device and a method for producing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US5309472A

    公开(公告)日：1994-05-03

    申请号：US903785

    申请日：1992-06-24

    申请人： Hiroaki Kudo ,  Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Haruhisa Takiguchi

    发明人： Hiroaki Kudo ,  Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Haruhisa Takiguchi

    IPC分类号： H01L33/06 ,  H01L33/20 ,  H01S5/026 ,  H01S5/12 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/327 ,  H01S5/34 ,  H01S5/343 ,  H01S3/08

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/32 ,  H01L33/20 ,  H01S5/026 ,  H01S5/1231 ,  H01S5/223 ,  H01S5/32308 ,  H01S5/327 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  H01S5/343 ,  H01S5/3432

    摘要： A semiconductor device includes a multiple layer structure including a substantially flat active layer, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layer, and the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.

    摘要翻译： 半导体器件包括包括基本上平坦的有源层的多层结构，以及彼此相邻的第一半导体层和第二半导体层，所述半导体层在其间的界面处具有波纹状; 以及连接到所述多层结构的生成装置。 通过在包括有源层的波导区域中使用发生器件产生电磁场强度分布，并且有源层包括具有对应于波纹的分布图案的增益分布。 通过在第一半导体层的上表面上形成波纹并通过使用气相生长法一次形成包括第二半导体层和活性层的多层结构的其余部分来制造多层结构，以使 活性层基本上平坦。 然后，生成装置形成为与多层结构接触。