公开(公告)号：US09297778B2

公开(公告)日：2016-03-29

申请号：US13418903

申请日：2012-03-13

申请人： Hirotaka Onogi ,  Kenji Kato ,  Satoshi Teramoto

发明人： Hirotaka Onogi ,  Kenji Kato ,  Satoshi Teramoto

IPC分类号： G01N27/407

CPC分类号： G01N27/4074

摘要： A sensor control apparatus is disclosed, including a preliminary control for supplying a constant current to a second oxygen pump cell of a gas sensor for a constant period of time so as to control to a constant level the amount of oxygen pumped out from a second measurement chamber (S40 to S50). At the beginning of drive control (S55 to S80), oxygen is pumped back into the second measurement chamber. During the pumping back operation, an NOX concentration correspondence value has a large time course change and is not stable. The NOX concentration correspondence value is corrected using correction data common among gas sensors, wherein the timing for applying the correction data is adjusted by making use of an application time determined in accordance with individual differences of each gas sensor.

摘要翻译： 公开了一种传感器控制装置，其包括用于向恒定时间段的气体传感器的第二氧气泵室提供恒定电流的初步控制，以便将从第二测量泵出的氧气量控制在恒定水平 （S40〜S50）。 在驱动控制开始时（S55〜S80），氧被泵回第二测量室。 在抽吸操作期间，NOX浓度对应值具有大的时程变化并且不稳定。 使用在气体传感器中公知的校正数据来校正NO x浓度对应值，其中通过利用根据每个气体传感器的个体差异确定的施加时间来调整用于应用校正数据的定时。

公开(公告)号：US08992752B2

公开(公告)日：2015-03-31

申请号：US13401221

申请日：2012-02-21

申请人： Masaki Onkawa ,  Shigehiro Otsuka ,  Seiji Oya ,  Satoshi Teramoto ,  Kuniharu Tanaka ,  Takeshi Mitsuoka

发明人： Masaki Onkawa ,  Shigehiro Otsuka ,  Seiji Oya ,  Satoshi Teramoto ,  Kuniharu Tanaka ,  Takeshi Mitsuoka

IPC分类号： G01N27/407

CPC分类号： G01N27/4077

摘要： There is provided a gas sensor element for detecting the concentration of a specific gas component in gas under measurement, which includes a plate-shaped element body and a porous protection layer. The element body has, at one end portion thereof, a gas sensing portion formed with a solid electrolyte substrate and a pair of electrodes. The porous protection layer has a porous structure formed of ceramic particles and surrounds at least the circumference of the one end portion of the element body. In the present invention, the porous protection layer has an inner region, an intermediate region and an outer region laminated together in order of mention from the element body toward the outside. The intermediate region has a porosity lower than those of the inner and outer regions. There is also provided a gas sensor with such a gas sensor element.

摘要翻译： 提供了一种气体传感器元件，用于检测测量气体中特定气体成分的浓度，包括板状元件体和多孔保护层。 元件体的一端具有形成有固体电解质基板和一对电极的气体检测部。 多孔保护层具有由陶瓷颗粒形成的多孔结构，并且至少包围元件主体的一个端部的周边。 在本发明中，多孔保护层具有从元件体朝向外侧依次层叠的内部区域，中间区域和外部区域。 中间区域的孔隙率低于内部和外部区域的孔隙率。 还提供了具有这种气体传感器元件的气体传感器。

公开(公告)号：US08466469B2

公开(公告)日：2013-06-18

申请号：US10815654

申请日：2004-04-02

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satoshi Teramoto

IPC分类号： H01L29/10

CPC分类号： G02F1/133305 ,  G02F1/136227 ,  H01L29/78636

摘要： A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.

摘要翻译： 形成有源矩阵液晶显示器的一对基板由具有透明性和柔性的树脂基板制成。 薄膜晶体管具有形成在形成在一个树脂基板上的树脂层上的半导体膜。 形成树脂层以防止在形成膜期间在树脂基材的表面上产生低聚物并使树脂基材的表面平坦化。

公开(公告)号：US08182664B2

公开(公告)日：2012-05-22

申请号：US12115840

申请日：2008-05-06

申请人： Masamichi Hiraiwa ,  Nobuhiro Inoue ,  Satoshi Teramoto ,  Yukinobu Nagao

发明人： Masamichi Hiraiwa ,  Nobuhiro Inoue ,  Satoshi Teramoto ,  Yukinobu Nagao

IPC分类号： G01N27/419

CPC分类号： G01N27/4067

摘要： A sensor control device for controlling a current application state of a gas sensor element when measuring a specific gas component concentration in a gas to be measured using the gas sensor element, which sensor control device includes: at least one cell having a solid electrolyte body and a pair of electrodes; a sensor heating unit as defined herein; an oxygen reference pole generating unit as defined herein; a damage avoidance time elapse determining unit as defined herein; and a reference generation current application permitting unit as defined herein.

摘要翻译： 一种传感器控制装置，用于在使用气体传感器元件测量要测量的气体中的特定气体成分浓度时，控制气体传感器元件的当前施加状态，所述传感器控制装置包括：至少一个具有固体电解质体的电池， 一对电极; 如本文所定义的传感器加热单元; 如本文所定义的氧参考极产生单元; 如本文所定义的损害回避时间流逝确定单元; 以及如本文所定义的参考生成电流应用许可单元。

公开(公告)号：US07964073B2

公开(公告)日：2011-06-21

申请号：US11604218

申请日：2006-11-27

申请人： Masamichi Hiraiwa ,  Takeshi Kawai ,  Satoshi Teramoto ,  Shigeki Mori ,  Hiroshi Inagaki

发明人： Masamichi Hiraiwa ,  Takeshi Kawai ,  Satoshi Teramoto ,  Shigeki Mori ,  Hiroshi Inagaki

IPC分类号： G01N27/419

CPC分类号： G01N27/419

摘要： Using a gas detection voltage Vs output from a terminal CU, a determination is made at to whether, after startup of an air-fuel ratio detection apparatus (1), a full-range air-fuel ratio sensor (10) has reached a semi-activated state in which a determination can be made as to whether the air-fuel ratio is on the rich or lean side based on a change in a gas detection signal Vic. After determining that the sensor has reached the semi-activated state, the signal Vic is compared with a threshold to determine whether the air-fuel ratio is on the rich or lean side. In the apparatus (1), the potential difference between an outer pump electrode of a pump cell (14) and a reference electrode of an oxygen concentration measurement cell (24) is obtained via a first differential amplification circuit (53) as the gas detection signal Vic, the signal Vic being highly responsive to a change in air-fuel ratio of exhaust gas.

摘要翻译： 使用从端子CU输出的气体检测电压Vs，判定在空燃比检测装置（1）启动后，全范围空燃比传感器（10）到达半空 基于气体检测信号Vic的变化，能够进行空燃比是富气还是偏侧的判定。 在确定传感器已经达到半激活状态之后，将信号Vic与阈值进行比较，以确定空燃比是富有还是偏侧。 在装置（1）中，通过作为气体检测器的第一差分放大电路（53）获得泵电池（14）的外泵电极与氧浓度测定电池（24）的参比电极之间的电位差 信号Vic，信号Vic对废气的空燃比变化高度响应。

公开(公告)号：US20110101360A1

公开(公告)日：2011-05-05

申请号：US12981914

申请日：2010-12-30

申请人： Yasuhiko TAKEMURA ,  Satoshi TERAMOTO

发明人： Yasuhiko TAKEMURA ,  Satoshi TERAMOTO

IPC分类号： H01L29/04

CPC分类号： H01L27/1248 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

摘要翻译： 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。 因此，可以提高N沟道型TFT对热电子的可靠性。

公开(公告)号：US07838968B2

公开(公告)日：2010-11-23

申请号：US11293111

申请日：2005-12-05

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L23/58 ,  H01L27/01 ,  H01L29/04

CPC分类号： H01L21/31111 ,  G02F1/136227 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/76801 ,  H01L21/76802 ,  H01L27/12 ,  H01L27/1248

摘要： There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.

摘要翻译： 公开了具有提高的可靠性的TFT。 形成TFT的层间电介质膜由氮化硅膜构成。 其它层间绝缘膜也由氮化硅制成。 形成这些层间电介质膜的氮化硅膜内的应力设定在-5×109〜5×10 9 dyn / cm 2之间。 这可以抑制层间绝缘膜的剥离和形成接触孔的困难。 此外，可以抑制从活性层释放氢。 以这种方式，可以获得高度可靠的TFT。

公开(公告)号：US07709837B2

公开(公告)日：2010-05-04

申请号：US11483108

申请日：2006-07-10

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L31/06

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理，在硅膜上形成热氧化膜。 在该步骤中，在硅膜中，包含的杂质如氧或氯的杂质沿着晶体生长延伸而分离，结晶度提高，并且镍元素的吸杂进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US07691692B2

公开(公告)日：2010-04-06

申请号：US12232433

申请日：2008-09-17

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

公开(公告)号：US07667817B2

公开(公告)日：2010-02-23

申请号：US11782042

申请日：2007-07-24

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： G02F1/1339 ,  G02F1/1345

CPC分类号： G02F1/13392 ,  G02F1/1334 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/13454 ,  G02F2001/133388 ,  G09G3/3648

摘要： A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

摘要翻译： 通过层叠各种构成薄膜晶体管的薄膜形成的层叠间隔部分设置在外围驱动电路中。 结果，即使在密封构件的一部分设置在外围驱动电路的上方的结构中，由密封构件中的间隔物施加的压力集中在层叠间隔部分上，从而破坏周边的薄膜晶体管 可以防止来自密封部的压力引起的驱动电路。