公开(公告)号：US06337627B1

公开(公告)日：2002-01-08

申请号：US09699183

申请日：2000-10-27

申请人： Robert J. Von Gutfeld ,  James F. Ziegler ,  Scott J. McAllister ,  James H. Anderson ,  John C. Murphy ,  Matthias D. Ziegler

发明人： Robert J. Von Gutfeld ,  James F. Ziegler ,  Scott J. McAllister ,  James H. Anderson ,  John C. Murphy ,  Matthias D. Ziegler

IPC分类号： G08B1314

CPC分类号： A61B5/06 ,  A61B5/062 ,  G01V15/00

摘要： The invention describes methods for locating a treatment device disposed within a living body by means of magnetic fields that are produced by Barkhausen jumps, principally from amorphous tag wires with high permeability that exhibit reentrant flux reversal. When wires of this type are attached to concealed treatment devices such as catheters, interrogation or scanning of the tag wire by a low frequency ac magnetic field affords an accurate means for locating the treatment devices using a sensor coil to detect the magnetic field signal from the wire locating tag. The strength of the field detected by the position of a sensor coil with respect to the locator tag is used to determine the location of the tag. A favorable signal to noise detection ration is obtained as the signal emitted by the wire is at a very high frequency compared to that of the frequency of the interrogation field.

摘要翻译： 本发明描述了通过由Barkhausen跳跃产生的磁场来定位设置在生物体内的治疗装置的方法，主要是来自呈现出可重入通量反转的高磁导率的非晶标签线。 当这种类型的导线连接到诸如导管的隐蔽处理装置时，通过低频交流磁场对标签线的询问或扫描提供了使用传感器线圈来定位处理装置的精确装置，以检测来自 电线定位标签。 使用传感器线圈相对于定位器标签的位置检测的场强度来确定标签的位置。 获得有利的信噪比检测比例，因为与线询问频率相比，由线发出的信号处于非常高的频率。

公开(公告)号：US20130113043A1

公开(公告)日：2013-05-09

申请号：US13292629

申请日：2011-11-09

申请人： John G. MASSEY ,  Scott J. McALLISTER ,  Charles J. MONTROSE ,  Stewart E. RAUCH, III

发明人： John G. MASSEY ,  Scott J. McALLISTER ,  Charles J. MONTROSE ,  Stewart E. RAUCH, III

IPC分类号： H01L27/12 ,  G06F17/50 ,  H01L21/336

CPC分类号： H01L21/84 ,  H01L27/1108 ,  H01L27/1203

摘要： A radiation hardened static memory cell, methods of manufacture and design structures are provided. The method includes forming one or more first gate stacks and second gate stacks on a substrate. The method further includes providing a shallow implant process for the one or more first gate stacks such that diffusion regions of the one or more first gate stacks are non-butted junction regions. The method further includes providing a deep implant process for the one or more second gates stack such that diffusions regions of the one or more second gate stacks are butted junction regions.

摘要翻译： 提供了辐射硬化的静电记忆单元，制造方法和设计结构。 该方法包括在衬底上形成一个或多个第一栅极叠层和第二栅极叠层。 该方法还包括为一个或多个第一栅极堆叠提供浅注入工艺，使得一个或多个第一栅极叠层的扩散区域是非对接结的区域。 所述方法还包括为所述一个或多个第二栅极堆叠提供深度注入工艺，使得所述一个或多个第二栅极叠层的扩散区域为对接结区域。

公开(公告)号：US09006827B2

公开(公告)日：2015-04-14

申请号：US13292629

申请日：2011-11-09

申请人： John G. Massey ,  Scott J. McAllister ,  Charles J. Montrose ,  Stewart E. Rauch, III

发明人： John G. Massey ,  Scott J. McAllister ,  Charles J. Montrose ,  Stewart E. Rauch, III

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/11

CPC分类号： H01L21/84 ,  H01L27/1108 ,  H01L27/1203

摘要： A radiation hardened static memory cell, methods of manufacture and design structures are provided. The method includes forming one or more first gate stacks and second gate stacks on a substrate. The method further includes providing a shallow implant process for the one or more first gate stacks such that diffusion regions of the one or more first gate stacks are non-butted junction regions. The method further includes providing a deep implant process for the one or more second gates stack such that diffusions regions of the one or more second gate stacks are butted junction regions.

摘要翻译： 提供了辐射硬化的静电记忆单元，制造方法和设计结构。 该方法包括在衬底上形成一个或多个第一栅极叠层和第二栅极叠层。 该方法还包括为一个或多个第一栅极堆叠提供浅注入工艺，使得一个或多个第一栅极叠层的扩散区域是非对接结的区域。 所述方法还包括为所述一个或多个第二栅极堆叠提供深度注入工艺，使得所述一个或多个第二栅极叠层的扩散区域为对接结区域。