公开(公告)号：US20250015228A1

公开(公告)日：2025-01-09

申请号：US18895936

申请日：2024-09-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01L33/62

Abstract: A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

公开(公告)号：US12125940B2

公开(公告)日：2024-10-22

申请号：US17372992

申请日：2021-07-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01L33/62 ,  H01L33/04 ,  H01L33/10

Abstract: A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

公开(公告)号：US12100779B2

公开(公告)日：2024-09-24

申请号：US17703140

申请日：2022-03-24

Applicant: Sensor Electronic Technology, Inc.

Inventor： Joseph Dion ,  Devendra Diwan ,  Brandon A Robinson ,  Rakesh B Jain

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/0025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32

Abstract: A heterostructure with reduced optical losses is disclosed. The heterostructure includes a set of n-type layers; an active region that generates radiation at a peak emitted wavelength; and a set of p-type layers located adjacent to the active region. A reflective structure can be located adjacent to the set of p-type layers. A thickness of the set of p-type layers can be configured to promote constructive interference of the reflected radiation with radiation emitted by the active region in a direction toward the set of n-type layers.

公开(公告)号：US12011514B2

公开(公告)日：2024-06-18

申请号：US17688218

申请日：2022-03-07

Applicant: Sensor Electronic Technology, Inc.

Inventor： Arthur Peter Barber, III

IPC: A61L2/08 ,  A61L2/00 ,  A61L2/10 ,  A61L2/24 ,  A61N5/06 ,  G01N21/64

CPC classification number: A61L2/24 ,  A61L2/0047 ,  A61L2/0052 ,  A61L2/084 ,  A61L2/088 ,  A61L2/10 ,  A61N5/0624 ,  G01N21/6447 ,  G01N21/6456 ,  A61L2202/11 ,  A61L2202/122 ,  A61L2202/14 ,  A61L2202/24 ,  A61N2005/0626 ,  A61N2005/0661 ,  A61N2005/0662

Abstract: An illuminator comprising more than one set of ultraviolet radiation sources. A first set of ultraviolet radiation sources operate in a wavelength range of approximately 270 nanometers to approximately 290 nanometers. A second set of ultraviolet radiation sources operate in a wavelength range of approximately 380 nanometers to approximately 420 nanometers. The illuminator can also include a set of sensors for acquiring data regarding at least one object to be irradiated by the first and the second set of ultraviolet radiation sources. A control system configured to control and adjust a set of radiation settings for the first and the second set of ultraviolet radiation sources based on the data acquired by the set of sensors.

公开(公告)号：US11984529B2

公开(公告)日：2024-05-14

申请号：US16930819

申请日：2020-07-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mohamed Lachab

IPC: H01L33/06 ,  H01L29/00 ,  H01L33/10 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L29/00 ,  H01L33/10 ,  H01L33/025 ,  H01L33/145 ,  H01L33/32

Abstract: A heterostructure for an optoelectronic device is disclosed. The heterostructure includes an active region including at least one quantum well and at least one barrier and an electron blocking layer located adjacent to the active region, wherein the electron blocking layer includes a region of graded composition. An asymmetric p-type superlattice layer is located adjacent to the electron blocking layer, wherein the p-type superlattice includes at least one superlattice period comprising a set of wells and a set of barriers. A thickness of at least one of: each well in the set of wells or each barrier in the set of barriers varies along a length of the p-type superlattice.

公开(公告)号：US20240113251A1

公开(公告)日：2024-04-04

申请号：US18519778

申请日：2023-11-27

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur

IPC: H01L33/00 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/109 ,  H01L33/02 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/002 ,  H01L31/022408 ,  H01L31/03048 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/109 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/06 ,  H01L2933/0008

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

公开(公告)号：US11945735B2

公开(公告)日：2024-04-02

申请号：US17526227

申请日：2021-11-15

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky

IPC: C02F1/32

CPC classification number: C02F1/325 ,  C02F2201/005 ,  C02F2201/3227 ,  C02F2201/3228 ,  C02F2201/326 ,  C02F2209/36 ,  C02F2209/40

Abstract: A solution for irradiating a flowing fluid through a channel with ultraviolet radiation is provided. Ultraviolet radiation sources can be located within the channel in order to direct ultraviolet radiation towards the flowing fluid and/or the interior of the channel. A valve can be located adjacent to the channel to control the flow rate of the fluid. A control system can control and adjust the ultraviolet radiation based on the flow rate of the fluid and a user input component can receive a user input for the control system to adjust the ultraviolet radiation. The ultraviolet radiation sources, the control system, the user input component, and any other components that require electricity can receive power from a rechargeable power supply. An electrical generator located within the channel can convert energy from the fluid flowing through the channel into electricity for charging the rechargeable power supply.

公开(公告)号：US11751310B2

公开(公告)日：2023-09-05

申请号：US17123957

申请日：2020-12-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Arthur Peter Barber, III ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Robert M. Kennedy

IPC: H05B47/105 ,  G01J1/42 ,  G01N21/64 ,  A01G7/04

CPC classification number: H05B47/105 ,  A01G7/045 ,  G01J1/42 ,  G01N21/64

Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.

公开(公告)号：US11508871B2

公开(公告)日：2022-11-22

申请号：US17060954

申请日：2020-10-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur

IPC: H01L33/00 ,  H01L33/32 ,  H01L31/0352 ,  H01L33/14 ,  H01L31/105 ,  H01L31/0224 ,  H01L31/0304 ,  H01L33/02 ,  H01L31/109 ,  H01L33/04 ,  H01L33/06

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

公开(公告)号：US20220238750A1

公开(公告)日：2022-07-28

申请号：US17703140

申请日：2022-03-24

Applicant: Sensor Electronic Technology, Inc.

Inventor： Joseph Dion ,  Devendra Diwan ,  Brandon A. Robinson ,  Rakesh B. Jain

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/04 ,  H01L33/10

Abstract: A heterostructure with reduced optical losses is disclosed. The heterostructure includes a set of n-type layers; an active region that generates radiation at a peak emitted wavelength; and a set of p-type layers located adjacent to the active region. A reflective structure can be located adjacent to the set of p-type layers. A thickness of the set of p-type layers can be configured to promote constructive interference of the reflected radiation with radiation emitted by the active region in a direction toward the set of n-type layers.