公开(公告)号：US20140361243A1

公开(公告)日：2014-12-11

申请号：US14296147

申请日：2014-06-04

申请人： Seok Beom CHOI

发明人： Seok Beom CHOI

IPC分类号： H01L33/06 ,  H01L33/30 ,  H01L33/40

CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/16245

摘要： A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer.

摘要翻译： 发光器件包括在反射层下面或上方的至少一个层，以防止反射层从反射层下面和/或上方的层分层。

公开(公告)号：US08115220B2

公开(公告)日：2012-02-14

申请号：US11889562

申请日：2007-08-14

申请人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/40

摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

公开(公告)号：US07791100B2

公开(公告)日：2010-09-07

申请号：US11602285

申请日：2006-11-21

申请人： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

发明人： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/38

摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

摘要翻译： 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

公开(公告)号：US07695989B2

公开(公告)日：2010-04-13

申请号：US12406540

申请日：2009-03-18

申请人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/32

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US07687818B2

公开(公告)日：2010-03-30

申请号：US12177517

申请日：2008-07-22

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/405

摘要： There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.

摘要翻译： 提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。 根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。 这里，反射电极包括： 第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层 并且具有比所产生的光的波长更大的厚度。

公开(公告)号：US20090221110A1

公开(公告)日：2009-09-03

申请号：US12466086

申请日：2009-05-14

申请人： Su Yeol LEE ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Su Yeol LEE ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/28

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/40

摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

摘要翻译： 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

公开(公告)号：US07393710B2

公开(公告)日：2008-07-01

申请号：US11247935

申请日：2005-10-11

申请人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

发明人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

IPC分类号： H01L21/00

CPC分类号： H01S5/4031 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/2231 ,  H01S5/4087 ,  H01S2304/04

摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

摘要翻译： 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

公开(公告)号：US20080042149A1

公开(公告)日：2008-02-21

申请号：US11692568

申请日：2007-03-28

申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US07012284B2

公开(公告)日：2006-03-14

申请号：US10837780

申请日：2004-05-04

申请人： Seok Beom Choi ,  Bang Won Oh ,  Hee Seok Choi

发明人： Seok Beom Choi ,  Bang Won Oh ,  Hee Seok Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/025

摘要： Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.

摘要翻译： 这里公开了一种氮化物半导体发光器件。 氮化物半导体发光器件包括在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，以使n型氮化物半导体层的一部分露出，p型氮化物 形成在有源层上的半导体层，p型氮化物半导体层上的高浓度掺杂剂区域，高浓度掺杂剂区域上的相对掺杂区域，形成在n型氮化物半导体层的暴露部分上的n侧电极 氮化物半导体层和形成在反掺杂区域上的p侧电极。 通过离子注入工艺和热处理提供了用于p侧电极的令人满意的欧姆接触。

公开(公告)号：US20130193464A1

公开(公告)日：2013-08-01

申请号：US13732628

申请日：2013-01-02

申请人： Seok Hun BAE ,  Seok Beom CHOI ,  Pil Geun KANG ,  Deok Ki HWANG ,  Young Ju HAN ,  Hee Seok CHOI ,  Young Rok PARK ,  Tae Don LEE ,  Hyun Sung OH ,  Jee Hue JOO ,  Dong Woo KANG ,  Sung Sig KIM

发明人： Seok Hun BAE ,  Seok Beom CHOI ,  Pil Geun KANG ,  Deok Ki HWANG ,  Young Ju HAN ,  Hee Seok CHOI ,  Young Rok PARK ,  Tae Don LEE ,  Hyun Sung OH ,  Jee Hue JOO ,  Dong Woo KANG ,  Sung Sig KIM

IPC分类号： H01L33/40

CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/382 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2924/01322 ,  H01L2924/1301 ,  H01L2924/00

摘要： Disclosed are a light emitting device, a light emitting device package and a light emitting module. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a support member under the light emitting structure; a reflective electrode layer between the second conductive semiconductor layer and the support member; and first to third connection electrodes spaced apart from each other in the support member. The second connection electrode is disposed between the first and third connection electrodes, the first and third connection electrodes are electrically connected with each other, and the support member is disposed at a peripheral portion of the first to third connection electrodes.

摘要翻译： 公开了发光器件，发光器件封装和发光模块。 发光器件包括发光结构，其包括第一导电半导体层，第二导电半导体层和在第一和第二导电半导体层之间的有源层; 在发光结构下的支撑构件; 在所述第二导电半导体层和所述支撑构件之间的反射电极层; 以及在支撑构件中彼此间隔开的第一至第三连接电极。 第二连接电极设置在第一和第三连接电极之间，第一和第三连接电极彼此电连接，并且支撑构件设置在第一至第三连接电极的周边部分。