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    NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    4.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
    氮化物半导体发光元件

    公开(公告)号：US20140191194A1

    公开(公告)日：2014-07-10

    申请号：US14237513

    申请日：2011-08-09

    申请人： Seok Min Hwang ,  Jae Ho Han ,  Jae Yoon Kim ,  Hae Soo Ha ,  Su Yeol Lee ,  Je Won Kim

    发明人： Seok Min Hwang ,  Jae Ho Han ,  Jae Yoon Kim ,  Hae Soo Ha ,  Su Yeol Lee ,  Je Won Kim

    IPC分类号： H01L33/24 ,  H01L33/06

    CPC分类号： H01L33/20 ,  H01L33/14

    摘要： There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

    摘要翻译： 提供一种氮化物半导体发光器件，其能够通过纹理效果提高光提取效率，并且包括：发光结构，形成在基板上，并且包括第一导电型氮化物半导体层和第二导电型氮化物半导体层 其间插入有源层; 电连接到第一导电型氮化物半导体层的第一电极; 电连接到第二导电型氮化物半导体层的第二电极; 以及设置在所述第一电极和所述第二电极之间并且包括通过垂直穿透所述发光结构而形成的多个通孔的光提取图案。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120104444A1

    公开(公告)日：2012-05-03

    申请号：US13286807

    申请日：2011-11-01

    申请人： Seok Min HWANG ,  Jae Yoon Kim ,  Jin Bock Lee

    发明人： Seok Min HWANG ,  Jae Yoon Kim ,  Jin Bock Lee

    IPC分类号： H01L33/60

    CPC分类号： H01L33/38 ,  H01L33/42 ,  H01L2933/0016

    摘要： A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers; and first and second electrodes disposed on one surface of each of the first and second conductive type semiconductor layers, respectively, wherein at least one of the first and second electrodes includes a pad part and a finger part formed to extend from the pad part, and the end of the finger part has an annular shape. Because a phenomenon in which current is concentrated in a partial area of the finger part is minimized, tolerance to electrostatic discharge (ESD) can be strengthened and light extraction efficiency can be improved.

    摘要翻译： 半导体发光器件包括：第一和第二导电类型半导体层; 设置在所述第一和第二导电类型半导体层之间的有源层; 以及分别设置在每个第一和第二导电类型半导体层的一个表面上的第一和第二电极，其中第一和第二电极中的至少一个包括衬垫部分和形成为从衬垫部分延伸的指状部分，以及 手指部分的端部具有环形形状。 由于电流集中在手指部分的部分区域的现象最小化，因此可以增强对静电放电（ESD）的耐受性，并且可以提高光提取效率。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20120098009A1

    公开(公告)日：2012-04-26

    申请号：US13225979

    申请日：2011-09-06

    申请人： Jae Yoon KIM ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

    发明人： Jae Yoon KIM ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

    IPC分类号： H01L33/60 ,  H01L33/42

    CPC分类号： H01L33/005 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

    摘要： A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

    摘要翻译： 一种半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层依次层叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

    Nitride semiconductor light emitting device
    8.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US07777245B2

    公开(公告)日：2010-08-17

    申请号：US11499727

    申请日：2006-08-07

    申请人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

    发明人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20

    摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

    摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

    Nitride-based semiconductor light emitting diode
    9.
    发明申请
    Nitride-based semiconductor light emitting diode 有权
    氮化物半导体发光二极管

    公开(公告)号：US20070228388A1

    公开(公告)日：2007-10-04

    申请号：US11651023

    申请日：2007-01-09

    申请人： Kun Yon Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

    发明人： Kun Yon Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

    摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

    摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。