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    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MIM CAPACITOR AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MIM CAPACITOR AND METHOD OF FABRICATING THE SAME 有权
    具有MIM电容器的半导体集成电路装置及其制造方法

    公开(公告)号：US20110097869A1

    公开(公告)日：2011-04-28

    申请号：US12984823

    申请日：2011-01-05

    申请人： Seok-Jun Won ,  Jung-Min Park

    发明人： Seok-Jun Won ,  Jung-Min Park

    IPC分类号： H01L21/20

    CPC分类号： H01L27/0629 ,  H01L28/60

    摘要： In a semiconductor integrated circuit device and a method of formation thereof, a semiconductor device comprises: a semiconductor substrate; an insulator at a top portion of the substrate, defining an insulator region; a conductive layer pattern on the substrate, the conductive layer pattern being patterned from a common conductive layer, the conductive layer pattern including a first pattern portion on the insulator in the insulator region and a second pattern portion on the substrate in an active region of the substrate, wherein the second pattern portion comprises a gate of a transistor in the active region; and a capacitor on the insulator in the insulator region, the capacitor including: a lower electrode on the first pattern portion of the conductive layer pattern, a dielectric layer pattern on the lower electrode, and an upper electrode on the dielectric layer pattern.

    摘要翻译： 在半导体集成电路器件及其形成方法中，半导体器件包括：半导体衬底; 绝缘体，位于衬底的顶部，限定绝缘体区域; 在基板上的导电层图案，所述导电层图案从公共导电层图案化，所述导电层图案包括位于绝缘体区域中的绝缘体上的第一图案部分和位于所述绝缘体区域的有源区域中的第二图案部分 衬底，其中所述第二图案部分包括所述有源区中的晶体管的栅极; 以及在所述绝缘体区域中的绝缘体上的电容器，所述电容器包括：在所述导电层图案的所述第一图案部分上的下电极，所述下电极上的电介质层图案，以及所述电介质层图案上的上电极。

    Capacitor unit and method of forming the same
    4.
    发明授权
    Capacitor unit and method of forming the same 有权
    电容器单元及其形成方法

    公开(公告)号：US07855431B2

    公开(公告)日：2010-12-21

    申请号：US12106830

    申请日：2008-04-21

    申请人： Jung-Min Park ,  Seok-Jun Won ,  Min-Woo Song ,  Weon-Hong Kim

    发明人： Jung-Min Park ,  Seok-Jun Won ,  Min-Woo Song ,  Weon-Hong Kim

    IPC分类号： H01L21/02

    CPC分类号： H01L28/65 ,  H01G4/33 ,  H01G4/38 ,  Y10S438/957

    摘要： A capacitor unit includes a first capacitor and a second capacitor. The first capacitor includes a first lower electrode, a first dielectric layer pattern and a first upper electrode sequentially stacked. The first capacitor includes a first control layer pattern for controlling a voltage coefficient of capacitance (VCC) of the first capacitor between the first lower electrode and the first dielectric layer pattern. The second capacitor includes a second lower electrode, a second dielectric layer pattern and a second upper electrode sequentially stacked. The second lower electrode is electrically connected to the first upper electrode, and the second upper electrode is electrically connected to the second lower electrode. The second capacitor includes a second control layer pattern for controlling a VCC of the second capacitor between the second lower electrode and the second dielectric layer pattern.

    摘要翻译： 电容器单元包括第一电容器和第二电容器。 第一电容器包括第一下电极，第一电介质层图案和顺序层叠的第一上电极。 第一电容器包括用于控制第一电容器和第一电介质层图案之间的第一电容器的电容电压（VCC）的电压系数的第一控制层图案。 第二电容器包括顺序层叠的第二下电极，第二电介质层图案和第二上电极。 第二下部电极与第一上部电极电连接，第二上部电极与第二下部电极电连接。 第二电容器包括用于在第二下电极和第二电介质层图案之间控制第二电容器的VCC的第二控制层图案。

    Capacitor having reaction preventing layer and methods of forming the same
    6.
    发明授权
    Capacitor having reaction preventing layer and methods of forming the same 失效
    具有防反射层的电容器及其形成方法

    公开(公告)号：US07442982B2

    公开(公告)日：2008-10-28

    申请号：US11130647

    申请日：2005-05-17

    申请人： Seok-Jun Won ,  Dae-Jin Kwon

    发明人： Seok-Jun Won ,  Dae-Jin Kwon

    IPC分类号： H01L29/08 ,  H01L29/94

    CPC分类号： H01L21/02304 ,  H01L21/02145 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02332 ,  H01L21/3144 ,  H01L27/1085 ,  H01L28/56 ,  H01L28/60

    摘要： The present invention is directed to a capacitor having a reaction preventing layer and a method forming the same. A lower electrode of silicon is formed on a substrate. An assistance layer of metal oxide or metal nitride is formed on the lower electrode. A nitridation process is performed to enable the silicon of the lower electrode, the assistance layer, and nitrogen supplied by the nitridation process to react with one another, forming a reaction preventing layer comprising metal silicon oxynitride or metal silicon nitride. A high-k dielectric film and an upper electrode are formed on the reaction preventing layer.

    摘要翻译： 本发明涉及一种具有反应防止层的电容器及其形成方法。 在基板上形成硅的下部电极。 在下部电极上形成金属氧化物或金属氮化物的辅助层。 进行氮化处理，使得下部电极的硅，辅助层和由氮化处理提供的氮彼此反应，形成包含金属氮氧化硅或金属氮化硅的反应防止层。 在反应防止层上形成高k电介质膜和上电极。

    Plasma processing apparatus and method of using the same
    8.
    发明申请
    Plasma processing apparatus and method of using the same 审中-公开
    等离子体处理装置及其使用方法

    公开(公告)号：US20070186857A1

    公开(公告)日：2007-08-16

    申请号：US11700785

    申请日：2007-02-01

    申请人： Ju-Youn Kim ,  Seok-Jun Won ,  Weon-Hong Kim

    发明人： Ju-Youn Kim ,  Seok-Jun Won ,  Weon-Hong Kim

    IPC分类号： B08B6/00 ,  C23C16/00

    CPC分类号： C23C16/4405 ,  C23C16/45591

    摘要： Example embodiments relate to an apparatus and method for manufacturing a semiconductor device. Other example embodiments relate to a plasma processing apparatus having an in-situ cleaning function and a method of using the same. The plasma processing apparatus may include an outer chamber, an inner chamber installed in the outer chamber, a gas supply unit for supplying a process gas or a cleaning gas into the inner chamber, an electrode positioned in the inner chamber, an electrode plasma power supply for applying power to the electrode, a first flexible member connecting the inner chamber and the outer chamber and having a first connector therein electrically connected to the inner chamber and/or a first chamber plasma power supply connected to the first connector and applying power to the inner chamber through the first connector.

    摘要翻译： 示例实施例涉及用于制造半导体器件的装置和方法。 其他示例性实施例涉及具有原位清洁功能的等离子体处理设备及其使用方法。 等离子体处理装置可以包括外室，安装在外室的内室，用于向内室供给处理气体或清洁气体的气体供给单元，位于内室的电极，电极等离子体电源 用于向所述电极施加电力;第一柔性构件，其连接所述内室和所述外室，并且具有电连接到所述内室的第一连接器和/或连接到所述第一连接器的第一室等离子体电源， 内室通过第一连接器。

    METHODS OF FORMING METAL LAYERS USING METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
    9.
    发明申请
    METHODS OF FORMING METAL LAYERS USING METAL-ORGANIC CHEMICAL VAPOR DEPOSITION 审中-公开
    使用金属有机化学气相沉积法形成金属层的方法

    公开(公告)号：US20070178249A1

    公开(公告)日：2007-08-02

    申请号：US11623815

    申请日：2007-01-17

    申请人： Min-Woo Song ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Weon-Hong Kim ,  Ju-Youn Kim ,  Jung-Min Park

    发明人： Min-Woo Song ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Weon-Hong Kim ,  Ju-Youn Kim ,  Jung-Min Park

    IPC分类号： H05H1/24

    CPC分类号： C23C16/34 ,  C23C16/56

    摘要： Provided is a method of forming a metal layer using metal-organic chemical vapor deposition (MOCVD). The method includes using MOCVD to form on a dielectric layer a metal layer having a first thickness, performing a first plasma process on the metal layer, using the MOCVD process to form a metal layer having a second thickness on the metal layer having the first thickness and performing a second plasma process on the metal layer having the second thickness, wherein the second plasma process has an energy level greater than the energy level of the first plasma process.

    摘要翻译： 提供了使用金属有机化学气相沉积（MOCVD）形成金属层的方法。 该方法包括使用MOCVD在电介质层上形成具有第一厚度的金属层，在金属层上执行第一等离子体处理，使用MOCVD工艺在具有第一厚度的金属层上形成具有第二厚度的金属层 以及对具有所述第二厚度的所述金属层执行第二等离子体处理，其中所述第二等离子体工艺具有大于所述第一等离子体工艺的能级的能级。