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    Semiconductor light emitting diode chip and light emitting device using the same
    3.
    发明授权
    Semiconductor light emitting diode chip and light emitting device using the same 失效
    半导体发光二极管芯片和发光装置使用相同

    公开(公告)号：US08487334B2

    公开(公告)日：2013-07-16

    申请号：US13279782

    申请日：2011-10-24

    申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  H01L33/20

    摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

    摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20090166669A1

    公开(公告)日：2009-07-02

    申请号：US12251782

    申请日：2008-10-15

    申请人： Je Won Kim ,  Yong Chun Kim ,  Sang Won Kang ,  Seok Min Hwang ,  Seung Wan Chae

    发明人： Je Won Kim ,  Yong Chun Kim ,  Sang Won Kang ,  Seok Min Hwang ,  Seung Wan Chae

    IPC分类号： H01L21/20 ,  H01L33/00

    CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/025

    摘要： A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.

    摘要翻译： 一种氮化物半导体发光器件及其制造方法，其可以在确保均匀的电流扩展到有源层的同时防止诸如位错之类的晶体缺陷。 氮化物半导体发光器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的第一中间图案层，具有由Si化合物制成的纳米级点结构的第一中间图案层， 形成在所述第一氮化物半导体层上的第二氮化物半导体层，形成在所述第二氮化物半导体层上的第二中间图案层，所述第二中间图案层具有由Si化合物制成的纳米级点结构，所述第二中间图案层是电绝缘的 形成在第二氮化物半导体层上的第三氮化物半导体层，形成在第三氮化物半导体层上的有源层和形成在有源层上的p型氮化物半导体层。

    GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND PROCESS FOR PREPARING THE SAME
    6.
    发明申请
    GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND PROCESS FOR PREPARING THE SAME 审中-公开
    基于氮化镓的半导体发光二极管及其制备方法

    公开(公告)号：US20080286894A1

    公开(公告)日：2008-11-20

    申请号：US12166113

    申请日：2008-07-01

    申请人： Seung Wan CHAE ,  Jun Sub KWAK ,  Hyoun Soo SHIN ,  Jun Ho SEO

    发明人： Seung Wan CHAE ,  Jun Sub KWAK ,  Hyoun Soo SHIN ,  Jun Ho SEO

    IPC分类号： H01L33/00

    CPC分类号： H01L21/28575 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2924/10155

    摘要： A process for preparing a gallium nitride based semiconductor light emitting diode includes the step of: providing a substrate for growing a gallium nitride based semiconductor material; forming a lower clad layer on the substrate using a first conductive gallium nitride based semiconductor material; forming an active layer on the lower conductive clad layer using an undoped gallium nitride based semiconductor material; forming an upper clad layer on the active layer using a second conductive gallium nitride based semiconductor material; removing at least a portion of the upper clad layer and active layer at a predetermined region so as to expose the corresponding portion of the lower clad layer; and forming, on the upper surface of the upper clad layer, an ohmic contact forming layer made of In2O3 including at least one of Zn, Mg and Cu.

    摘要翻译： 一种制备氮化镓基半导体发光二极管的方法包括以下步骤：提供用于生长氮化镓基半导体材料的衬底; 使用第一导电氮化镓基半导体材料在所述衬底上形成下包层; 使用未掺杂的氮化镓基半导体材料在所述下导电覆层上形成有源层; 使用第二导电氮化镓基半导体材料在所述有源层上形成上覆层; 在预定区域去除上包层和有源层的至少一部分，以暴露下包层的相应部分; 以及在所述上包层的上表面上形成包括Zn，Mg和Cu中的至少一种的由In 2 O 3 3构成的欧姆接触形成层。

    Nitride-based semiconductor light emitting diode
    7.
    发明申请
    Nitride-based semiconductor light emitting diode 有权
    氮化物半导体发光二极管

    公开(公告)号：US20080210972A1

    公开(公告)日：2008-09-04

    申请号：US12003276

    申请日：2007-12-21

    申请人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyng Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

    发明人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyng Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

    摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

    摘要翻译： 提供一种包含基板的氮化物系半导体LED， 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

    Group III-nitride light emitting device
    8.
    发明授权
    Group III-nitride light emitting device 失效
    III族氮化物发光器件

    公开(公告)号：US07235820B2

    公开(公告)日：2007-06-26

    申请号：US11315150

    申请日：2005-12-23

    申请人： Hyun Wook Shim ,  Suk Kil Yoon ,  Jae Chul Ro ,  Seung Wan Chae

    发明人： Hyun Wook Shim ,  Suk Kil Yoon ,  Jae Chul Ro ,  Seung Wan Chae

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

    摘要： The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.

    摘要翻译： 本发明提供了具有改进的外部量子效率和亮度的III族氮化物发光器件。 发光器件包括依次形成的n型覆盖层，有源层和p型覆盖层。 此外，在p型覆盖层上形成p电极，其中p电极包括CuInO 2层，透明导电氧化物层和顺序地形成在p型上的反射金属层 包层 反射金属层可以是Ag层或Al层。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    9.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
    半导体发光元件

    公开(公告)号：US20140231859A1

    公开(公告)日：2014-08-21

    申请号：US14236582

    申请日：2011-08-01

    申请人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

    发明人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

    IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/32

    CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

    摘要翻译： 半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。 第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。 第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。 第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

    SEMICONDUCTOR LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE USING THE SAME
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE USING THE SAME 失效
    半导体发光二极管芯片和发光器件使用它

    公开(公告)号：US20120286309A1

    公开(公告)日：2012-11-15

    申请号：US13279782

    申请日：2011-10-24

    申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    IPC分类号： H01L33/46

    CPC分类号： H01L33/46 ,  H01L33/20

    摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

    摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。