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    Thin film transistor array and method of manufacturing the same
    2.
    发明授权
    Thin film transistor array and method of manufacturing the same 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US08184251B2

    公开(公告)日：2012-05-22

    申请号：US12498526

    申请日：2009-07-07

    申请人： Ki-Hun Jeong ,  Seung-Hwan Shim ,  Joo-Han Kim ,  Hong-Kee Chin

    发明人： Ki-Hun Jeong ,  Seung-Hwan Shim ,  Joo-Han Kim ,  Hong-Kee Chin

    IPC分类号： G02F1/1333

    CPC分类号： H01L27/1214 ,  H01L27/1288 ,  H01L29/4908

    摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

    摘要翻译： 制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

    THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20100001277A1

    公开(公告)日：2010-01-07

    申请号：US12498526

    申请日：2009-07-07

    申请人： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

    发明人： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

    IPC分类号： H01L27/12 ,  H01L21/77

    CPC分类号： H01L27/1214 ,  H01L27/1288 ,  H01L29/4908

    摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

    摘要翻译： 制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

    Thin film transistor array and method of manufacturing the same
    6.
    发明授权
    Thin film transistor array and method of manufacturing the same 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US08390776B2

    公开(公告)日：2013-03-05

    申请号：US13450643

    申请日：2012-04-19

    申请人： Ki-Hun Jeong ,  Seung-Hwan Shim ,  Joo-Han Kim ,  Hong-Kee Chin

    发明人： Ki-Hun Jeong ,  Seung-Hwan Shim ,  Joo-Han Kim ,  Hong-Kee Chin

    IPC分类号： G02F1/13

    CPC分类号： H01L27/1214 ,  H01L27/1288 ,  H01L29/4908

    摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

    摘要翻译： 制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

    Liquid crystal display
    8.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号：US08237878B2

    公开(公告)日：2012-08-07

    申请号：US12536693

    申请日：2009-08-06

    申请人： Seung-Hwan Shim ,  Kap-Soo Yoon ,  Sung-Hoon Yang ,  Ki-Hun Jeong

    发明人： Seung-Hwan Shim ,  Kap-Soo Yoon ,  Sung-Hoon Yang ,  Ki-Hun Jeong

    IPC分类号： G02F1/1343

    CPC分类号： G02F1/1368 ,  G02F1/136213 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255

    摘要： A liquid crystal display (LCD) includes a gate wiring, a first insulating substrate, an oxide active layer pattern, a data wiring, a floating electrode, and an upper gate electrode. The gate wiring includes a gate line formed on the first insulating substrate and a lower gate electrode extending from the gate line. The oxide active layer pattern is formed on the gate wiring. The data wiring includes a data line intersecting the gate line. The floating electrode generates a coupling capacitance by overlapping the gate wiring. The upper gate electrode is capacitively coupled to the lower gate electrode.

    摘要翻译： 液晶显示器（LCD）包括栅极布线，第一绝缘基板，氧化物活性层图案，数据布线，浮动电极和上部栅电极。 栅极布线包括形成在第一绝缘基板上的栅极线和从栅极线延伸的下部栅电极。 氧化物有源层图案形成在栅极布线上。 数据线包括与栅极线相交的数据线。 浮动电极通过重叠栅极布线而产生耦合电容。 上栅电极电容耦合到下栅电极。

    Thin-film transistor substrate and method of fabricating the same
    9.
    发明授权
    Thin-film transistor substrate and method of fabricating the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US07858412B2

    公开(公告)日：2010-12-28

    申请号：US12498534

    申请日：2009-07-07

    申请人： Joo-Han Kim ,  Ki-Hun Jeong ,  Seung-Hwan Shim

    发明人： Joo-Han Kim ,  Ki-Hun Jeong ,  Seung-Hwan Shim

    IPC分类号： H01L21/3213 ,  H01L21/336

    CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  Y10S438/951

    摘要： A thin-film transistor (“TFT”) substrate and a method of fabricating the same include: an insulating substrate; gate wiring which is disposed on the insulating substrate and includes a gate line and a gate electrode; a semiconductor pattern which is disposed on the gate electrode; data wiring which is disposed on the semiconductor pattern and includes a data line, a source electrode, and a drain electrode; a passivation layer which includes a first sub-passivation layer and a second sub-passivation layer deposited on the data wiring; and a pixel electrode which is electrically connected to the drain electrode through a contact hole disposed in the passivation layer, wherein the second sub-passivation layer has a lower density than the first sub-passivation layer.

    摘要翻译： 薄膜晶体管（“TFT”）基板及其制造方法包括：绝缘基板; 栅极布线，其布置在所述绝缘基板上并且包括栅极线和栅电极; 设置在栅电极上的半导体图案; 数据布线，其布置在半导体图案上并且包括数据线，源电极和漏电极; 钝化层，其包括沉积在数据布线上的第一子钝化层和第二子钝化层; 以及通过设置在所述钝化层中的接触孔电连接到所述漏电极的像素电极，其中所述第二子钝化层具有比所述第一子钝化层更低的密度。