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    Method and device for managing authorization of right object in digital rights managment
    3.
    发明授权
    Method and device for managing authorization of right object in digital rights managment 有权
    在数字版权管理中管理权利对象授权的方法和装置

    公开(公告)号：US09135408B2

    公开(公告)日：2015-09-15

    申请号：US12372825

    申请日：2009-02-18

    申请人： Youn-Sung Chu ,  Seung-Jae Lee

    发明人： Youn-Sung Chu ,  Seung-Jae Lee

    IPC分类号： G06F21/00 ,  G06F15/16 ,  G06F21/10

    CPC分类号： G06F21/10

    摘要： Provided is a method for managing an authorization of digital rights, the method performed by a first server and comprising: receiving from a second server a drop domain authorization trigger message for an initiation of an authorization protocol to cease creating a domain rights object (RO) for a domain for which the first server has an authorization to create the domain RO, the trigger message including information on the domain; the domain being managed by the second server and the authorization being obtained by the first server from the second server checking status of the authorization; transmitting to the second server, a drop domain authorization request message including the ID of the domain; and receiving from the second server, a drop domain authorization response message including a status element indicating a result of processing of the request message based on content included in the request message.

    摘要翻译： 提供了一种用于管理数字权利的授权的方法，所述方法由第一服务器执行，并且包括：从第二服务器接收用于启动授权协议以停止创建域权限对象（RO）的丢弃域授权触发消息， 对于第一服务器具有创建域RO的授权的域，触发消息包括关于域的信息; 所述域由所述第二服务器管理，并且所述授权由所述第一服务器从所述第二服务器获取所述授权的检查状态; 向所述第二服务器发送包括所述域的ID的丢弃域授权请求消息; 以及从所述第二服务器接收包括根据所述请求消息中包含的内容指示所述请求消息的处理结果的状态元素的丢弃域授权响应消息。

    Copolymer for resist comprising novel acryl based monomer and resin composition for resist comprising the same
    6.
    发明授权
    Copolymer for resist comprising novel acryl based monomer and resin composition for resist comprising the same 失效
    用于抗蚀剂的共聚物，其包含新颖的基于丙烯酸的单体和包含其的抗蚀剂的树脂组合物

    公开(公告)号：US08771922B2

    公开(公告)日：2014-07-08

    申请号：US13432218

    申请日：2012-03-28

    申请人： Jin Bong Shin ,  Jin Ho Kim ,  Dae Hyeon Shin ,  Seung Jae Lee

    发明人： Jin Bong Shin ,  Jin Ho Kim ,  Dae Hyeon Shin ,  Seung Jae Lee

    IPC分类号： G03F7/00 ,  C08F236/20 ,  C08F118/02

    CPC分类号： C08F220/18 ,  C08F220/28 ,  C08F220/40 ,  C08F222/14 ,  C08F222/26 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397

    摘要： A resist resin composition includes 100 parts by weight of a copolymer represented by Formula 3 below; 0.5 to 1.5 parts by weight of a photoacid generator and 700 to 1,500 parts by weight of a solvent: wherein R1, R2, and R3 are each independently a C1-30 alkyl group, a C3-30 cycloalkyl group, an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group, or an aldehyde group, R4, R5, and R6 are each independently hydrogen or a methyl group, and l, m, n, and o each independently refer to the number of repeating units in a main backbone and satisfy the conditions: l+m+n+o=1, 0≦l/(l+m+n+o)

    摘要翻译： 抗蚀剂树脂组合物包含100重量份由下式3表示的共聚物; 0.5〜1.5重量份的光酸产生剂和700〜1500重量份的溶剂：其中R1，R2和R3各自独立地为C1-30烷基，C3-30环烷基，醚基， 酯基，羰基，缩醛基，环氧基，腈基或醛基，R 4，R 5和R 6各自独立地为氢或甲基，l，m，n和o各自独立地为 是指主骨架中的重复单元数，满足条件：l + m + n + o = 1，0＆nlE; l /（1 + m + n + o）<0.4,0

    Methods of forming gates of semiconductor devices
    7.
    发明授权
    Methods of forming gates of semiconductor devices 有权
    形成半导体器件栅极的方法

    公开(公告)号：US08735250B2

    公开(公告)日：2014-05-27

    申请号：US13241957

    申请日：2011-09-23

    申请人： Jong-Won Lee ,  Bo-Un Yoon ,  Seung-Jae Lee

    发明人： Jong-Won Lee ,  Bo-Un Yoon ,  Seung-Jae Lee

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/28008 ,  H01L21/28105 ,  H01L21/823842 ,  H01L29/42376 ,  H01L29/49 ,  H01L29/513 ,  H01L29/66545

    摘要： Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type. The methods may also include forming a high-k layer in the first and second recesses. The methods may further include providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess. The methods may additionally include removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal. The methods may also include, after removing at least portions of the first metal from the second recess, providing a second metal within the second recess.

    摘要翻译： 提供了形成半导体器件的栅极的方法。 所述方法可以包括在具有第一导电类型的第一衬底区域中形成第一凹槽，并在具有第二导电类型的第二衬底区域中形成第二凹部。 所述方法还可以包括在第一和第二凹部中形成高k层。 所述方法还可以包括在第一和第二衬底区域中的高k层上提供第一金属，第一金属设置在第二凹槽内。 所述方法还可以包括从第二凹部移除第一金属的至少一部分，同时保护第一凹槽内的材料不被去除。 所述方法还可以包括在从第二凹部去除第一金属的至少一部分之后，在第二凹部内提供第二金属。

    METHOD FOR MANUFACTURING A FLUORESCENT RESIN FILM AND FLUORESCENT RESIN FILM MANUFACTURED THEREBY
    8.
    发明申请
    METHOD FOR MANUFACTURING A FLUORESCENT RESIN FILM AND FLUORESCENT RESIN FILM MANUFACTURED THEREBY 审中-公开
    制造荧光树脂膜和荧光树脂薄膜制造方法

    公开(公告)号：US20140141283A1

    公开(公告)日：2014-05-22

    申请号：US14127878

    申请日：2011-08-12

    申请人： Seung Jae Lee ,  Na Na Park ,  Gyeong Seon Seon Park ,  Bo Kyoung Kim ,  Jong Rak Sohn ,  Chang Hoon Kwak

    发明人： Seung Jae Lee ,  Na Na Park ,  Gyeong Seon Seon Park ,  Bo Kyoung Kim ,  Jong Rak Sohn ,  Chang Hoon Kwak

    IPC分类号： C09K11/02 ,  B05D5/06

    CPC分类号： C09K11/025 ,  B05D5/06 ,  C08J7/06 ,  C09K11/08

    摘要： A method of manufacturing a phosphor resin film and a phosphor resin film manufactured thereby are provided. The method of manufacturing a phosphor resin film includes preparing a polymer slurry by mixing a polymer resin and a latent curing agent in a solvent, spreading the polymer slurry such that it has a film shape, drying the spread polymer slurry to form a semi-hardened resin film, and providing phosphor powder to the semi-hardened resin film. A phosphor resin film includes semi-hardened resin film including a polymer resin and a latent curing agent and phosphors uniformly formed on one surface of the semi-hardened resin film.

    摘要翻译： 提供了制造荧光体树脂膜的方法和由此制造的荧光体树脂膜。 制造荧光体树脂膜的方法包括通过在溶剂中混合聚合物树脂和潜在性固化剂来制备聚合物浆料，将聚合物浆料铺展成膜形状，干燥扩展聚合物浆料以形成半硬化 树脂膜，并向半硬化树脂膜提供荧光体粉末。 荧光体树脂膜包括半固化树脂膜，其包含聚合物树脂和潜在性固化剂以及均匀地形成在半硬化树脂膜的一个表面上的荧光体。

    Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation process
    9.
    发明授权
    Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation process 有权
    制造半导体器件的方法包括通过氮化处理形成外延阻挡层

    公开(公告)号：US08691642B2

    公开(公告)日：2014-04-08

    申请号：US13238611

    申请日：2011-09-21

    申请人： Jung-Chan Lee ,  Seung-Jae Lee ,  Yu-Gyun Shin ,  Dae-Young Kwak ,  Byung-Suk Jung

    发明人： Jung-Chan Lee ,  Seung-Jae Lee ,  Yu-Gyun Shin ,  Dae-Young Kwak ,  Byung-Suk Jung

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823814 ,  H01L21/823425

    摘要： A method of fabricating a semiconductor device includes forming gate structures on PMOS and NMOS transistor regions of the semiconductor substrate, forming epitaxial blocking layers on source/drain regions of PMOS and NMOS transistor regions using a nitridation process, then selectively removing one of the epitaxial blocking layers, and using a SEG process to form an epitaxial layer on respective source/drain regions while shielding the other source/drain regions with a remaining epitaxial blocking layer.

    摘要翻译： 制造半导体器件的方法包括在半导体衬底的PMOS和NMOS晶体管区域上形成栅极结构，使用氮化工艺在PMOS和NMOS晶体管区域的源极/漏极区域上形成外延阻挡层，然后选择性地去除外延阻挡层 并且使用SEG工艺在相应的源极/漏极区域上形成外延层，同时用剩余的外延阻挡层屏蔽另一个源极/漏极区域。