公开(公告)号：US08415690B2

公开(公告)日：2013-04-09

申请号：US13457931

申请日：2012-04-27

申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L21/02381 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.

摘要翻译： 提供了使用硅衬底作为基底的外延衬底。 一种外延衬底，其中在（111）单晶Si衬底上形成一组III族氮化物层，使得III族氮化物层组的（0001）晶面基本上平行于 所述基板包括：由AlN制成的第一III族氮化物层，其具有由柱状或粒状晶体或畴中至少一种构成的许多缺陷; 与第一III族氮化物层的界面成形为三维凹凸面的第二III族氮化物层; 以及外延形成在第二III族氮化物层上的第三III族氮化物层，作为梯度组成层，其中Al的存在比例在更接近第四族III族氮化物的部分中较小。

公开(公告)号：US20120126293A1

公开(公告)日：2012-05-24

申请号：US13353759

申请日：2012-01-19

申请人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

发明人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0

摘要翻译： 在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层 基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

公开(公告)号：US20080242060A1

公开(公告)日：2008-10-02

申请号：US12051168

申请日：2008-03-19

申请人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

发明人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254

摘要： A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0≦x≦1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0≦y≦1 and y≠x) such that the AlGaN layer has a superlattice structure.

摘要翻译： 提供了一种制备具有良好表面平坦度的AlGaN晶体层的方法。 通过MOCVD法在C面蓝宝石单晶基材上外延形成AlN的表面层，然后在1300℃以上的温度下加热所得到的层叠体，使得在基板上施加面内压缩 获得了基本原子水平的表面层平坦的应力。 通过MOCVD方法在模板基板上以高于1000℃的沉积温度在模板基板上形成AlGaN层，该方法包括：沉积包含由组成式Al x x表示的III族氮化物的第一单元层的交替层， （0≤x≤1）的第一单元层和由组成式Al Y y表示的III族氮化物的第二单位层 1-y N（0 <= y <= 1和y

公开(公告)号：US08872226B2

公开(公告)日：2014-10-28

申请号：US12884516

申请日：2010-09-17

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： H01L29/66

CPC分类号： H01L21/0262 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/7786

摘要： Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by five straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride.

摘要翻译： 提供了具有优异的二维电子气特性和由于应变引起的内部应力降低的外延基板。 沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。 阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，包围在五个 根据第一III族氮化物的组成（AlN摩尔分数）确定的直线。

公开(公告)号：US20130032781A1

公开(公告)日：2013-02-07

申请号：US13570665

申请日：2012-08-09

申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/15 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B25/183 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/7786 ,  H01L29/872 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.

摘要翻译： 提供了一种具有减小翘曲的无裂纹外延衬底，其中硅衬底用作基底衬底。 外延衬底包括（111）单晶Si衬底，层叠有多个超晶格层的超晶格层组和晶体层。 超晶格层由第一单位层和由具有不同组成的III-III族氮化物制成的第二单元层交替地和重复地层叠形成。 晶体层由III族氮化物制成，并且形成在基底基板上方，以便相对于基底衬底位于超晶格层组的上侧。 超晶格层组中含有压应变。 在超晶格层组中，超晶格层离基底越远，压应变越大。

公开(公告)号：US20120168771A1

公开(公告)日：2012-07-05

申请号：US13415066

申请日：2012-03-08

申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L29/7786 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66462

摘要： A semiconductor device is provided such that a reverse leak current is suppressed, and a Schottky junction is reinforced. The semiconductor device includes an epitaxial substrate formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) surfaces of said group-III nitride layers are substantially parallel to a substrate surface, and a Schottky electrode, in which the epitaxial substrate includes a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N, a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N, and a contact layer formed of a third group-III nitride having insularity and adjacent to the barrier layer, and the Schottky electrode is connected to the contact layer. In addition, a heat treatment is performed under a nitrogen atmosphere after the gate electrode has been formed.

摘要翻译： 提供半导体器件，使得抑制反向泄漏电流，并且增强肖特基结。 半导体器件包括：外延衬底，其通过在基底衬底上层叠一组III族氮化物层而形成，使得所述III族氮化物层的（0001）表面基本上平行于衬底表面，并且肖特基电极 ，其中外延衬底包括由具有In x Al 1 Al 1 Ga z N 1的组成的第一III族氮化物形成的沟道层，由具有In x 2 Al 2 N的组成的第二III族氮化物形成的阻挡层和由第三组形成的接触层 -III氮化物与隔离层相邻，并且肖特基电极连接到接触层。 此外，在形成栅电极之后，在氮气氛下进行热处理。

公开(公告)号：US20110062493A1

公开(公告)日：2011-03-17

申请号：US12853685

申请日：2010-08-10

申请人： Makoto MIYOSHI ,  Yoshitaka KURAOKA ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Tomohiko SUGIYAMA ,  Mitsuhiro TANAKA

发明人： Makoto MIYOSHI ,  Yoshitaka KURAOKA ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Tomohiko SUGIYAMA ,  Mitsuhiro TANAKA

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462

摘要： Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter α satisfying a range where 0≦α≦1.

摘要翻译： 本发明提供一种能够实现肖特基结的反向特性的高可靠性的半导体装置的半导体装置用外延基板。 一种用于半导体器件的外延衬底，其通过在基底衬底上通过层叠形成III族氮化物层，使得每个层的（0001）晶面大致平行于衬底表面而形成，其包括：沟道层，其由 具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1，z1> 0）的组成的第一III族氮化物; 和由具有Inx2Aly2N（x2 + y2 = 1，x2> 0，y2> 0）的组成的第二III族氮化物形成的阻挡层，其中第二III族氮化物是短距离有序混合晶体 满足0＆nlE;α＆nlE; 1的范围的 - 序列参数α。

公开(公告)号：US20110049571A1

公开(公告)日：2011-03-03

申请号：US12855744

申请日：2010-08-13

申请人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/78 ,  H01L29/205 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分比除了近表面部分之外的部分的In组成比小。

公开(公告)号：US07771849B2

公开(公告)日：2010-08-10

申请号：US12354921

申请日：2009-01-16

申请人： Tomohiko Shibata ,  Shigeaki Sumiya

发明人： Tomohiko Shibata ,  Shigeaki Sumiya

IPC分类号： B32B9/00 ,  C30B15/14

CPC分类号： H01L21/3247 ,  C30B29/403 ,  C30B31/06 ,  C30B33/02 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02694

摘要： An epitaxial substrate including a single-crystal base material and an upper layer of a group III nitride crystal film which is epitaxially formed on a main surface of the base material undergoes heating treatment in a nitrogen atmosphere at 1950° C. or higher for one minute. The result showed that, while a γ-ALON layer was formed only at the interface between the base material and the upper layer, the dislocation density in the group III nitride crystal was reduced to one tenth or less of the dislocation density before the heating treatment. The result also showed that the surface of the epitaxial substrate after the heating treatment had a reduced number of pits, which confirmed that high-temperature and short-time heating treatment was effective at improving the crystal quality and surface flatness of the group III nitride crystal.

摘要翻译： 在基材的主表面上外延形成的包含单晶基材和III族氮化物晶体膜的上层的外延基板在1950℃以上的氮气气氛中进行1分钟的加热处理 。 结果表明，只有在基材和上层之间的界面形成γ-ALON层时，III族氮化物晶体中的位错密度降低到加热处理前的位错密度的十分之一以下 。 结果还表明，加热处理后的外延基板的表面的凹坑数量减少，这证实高温短时加热处理在提高III族氮化物晶体的晶体质量和表面平坦度方面是有效的 。

公开(公告)号：US07713847B2

公开(公告)日：2010-05-11

申请号：US12051168

申请日：2008-03-19

申请人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

发明人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254

摘要： A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0≦x≦1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0≦y≦1 and y≠x) such that the AlGaN layer has a superlattice structure.

摘要翻译： 提供了一种制备具有良好表面平坦度的AlGaN晶体层的方法。 通过MOCVD法在C面蓝宝石单晶基材上外延形成AlN的表面层，然后在1300℃以上的温度下加热所得到的层叠体，使得在基板上施加面内压缩 获得了基本原子水平的表面层平坦的应力。 通过MOCVD方法在模板基板上以高于1000℃的沉积温度在模板基板上形成AlGaN层，该方法包括沉积包含由组成式Al x Ga 1-x N（0＆nl E; x＆nlE）表示的III族氮化物的第一单元层的交替层 ; 1）和包含由组成式AlyGa1-yN（0＆amp; nlE; y＆nlE; 1和y≠x）表示的III族氮化物的第二单元层，使得AlGaN层具有超晶格结构。