摘要:
To provide an exposure apparatus and an exposure method able to correct an image-placement error during an exposure which is unable to decrease only by correcting electron beam description data of a mask pattern, and a semiconductor device manufacturing method used the same, wherein an image placement R2 of a mask is measured at an inversion posture against an exposure posture (ST7), the measured image placement R2 is corrected with considering a pattern displacement caused by gravity at the exposure posture and a first correction data Δ1 is prepared based on a difference of the corrected image placement and a designed data (ST10), and an exposure is performed by deflecting charged particle beam to correct a position of a pattern to be exposed to a subject based on the first correction data Δ1 (ST13).
摘要翻译:为了提供一种曝光装置和曝光方法,能够通过校正掩膜图案的电子束描述数据而不能减小曝光期间的图像放置误差,以及使用其的半导体器件制造方法,其中图像 以与曝光姿势相反的反转姿势(ST7)测量掩模的放置R 2,考虑由曝光姿势引起的重力引起的图案位移,并且准备第一校正数据Delta 1来校正测量图像布置R 2 基于校正图像放置的差异和设计数据(ST10),并且通过基于第一校正数据Delta 1来对带电粒子束进行偏转来校正要暴露于对象的图案的位置来执行曝光( ST 13)。
摘要:
A mask blank has a plurality of pattern formation regions in which mask circuit patterns are to be formed, and a supporting region in which any mask circuit pattern is not to be formed. The supporting region is provided for holding the plurality of pattern formation regions while separating the plurality of pattern formation regions from each other. The supporting region has first and second alignment marks. Exposure of a mask made from the mask blank for forming mask circuit patterns thereon is performed on the basis of the first alignment marks, and exposure of a substrate for forming circuit patterns thereon is performed on the basis of the second alignment marks. With this configuration, a mask used for charged particle beam reduction-and-division transfer exposure can be highly accurately produced at a low cost, and exposure of a substrate can be highly accurately performed by using the mask.
摘要:
To provide a mask able to prevent a drop in pattern position accuracy due to the influence of internal stress of a membrane and able to align patterns including complementary divided patterns precisely, a method of producing the same, and a method of producing a semiconductor device. A stencil mask having lattice-shaped struts formed by etching a silicon wafer on four regions of a membrane wherein the lattices are offset from each other in the four regions and all of the struts are connected to other struts or the silicon wafer around the membrane (frame), a method of producing a stencil mask, and a method of producing a semiconductor device.
摘要:
To provide a mask able to prevent a drop in pattern position accuracy due to the influence of internal stress of a membrane and able to align patterns including complementary divided patterns precisely, a method of producing the same, and a method of producing a semiconductor device. A stencil mask having lattice-shaped struts formed by etching a silicon wafer on four regions of a membrane wherein the lattices are offset from each other in the four regions and all of the struts are connected to other struts or the silicon wafer around the membrane (frame), a method of producing a stencil mask, and a method of producing a semiconductor device.
摘要:
A mask blank has a plurality of pattern formation regions in which mask circuit patterns are to be formed, and a supporting region in which any mask circuit pattern is not to be formed. The supporting region is provided for holding the plurality of pattern formation regions while separating the plurality of pattern formation regions from each other. The supporting region has first and second alignment marks. Exposure of a mask made from the mask blank for forming mask circuit patterns thereon is performed on the basis of the first alignment marks, and exposure of a substrate for forming circuit patterns thereon is performed on the basis of the second alignment marks. With this configuration, a mask used for charged particle beam reduction-and-division transfer exposure can be highly accurately produced at a low cost, and exposure of a substrate can be highly accurately performed by using the mask.
摘要:
A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided. A mask pattern correction method, a mask production method, a mask produced thereby and a production method of a semiconductor device using the mask include a step of creating first position data indicating positions of a plurality of marks when supporting a first thin film having the marks in a state where a first surface directs upward, a step of creating second position data indicating mark positions when supporting the first thin film in a state where a second surface directs upward, a step of obtaining a transfer function for converting the first position data to the second position data, and a step of correcting a mask pattern as a shape of exposure beam transmission portions formed on a second thin film by using an inverse function of the transfer function.
摘要:
To provide a mask able to prevent a drop in pattern position accuracy due to the influence of internal stress of a membrane and able to align patterns including complementary divided patterns precisely, a method of producing the same, and a method of producing a semiconductor device. A stencil mask having lattice-shaped struts formed by etching a silicon wafer on four regions of a membrane wherein the lattices are offset from each other in the four regions and all of the struts are connected to other struts or the silicon wafer around the membrane (frame), a method of producing a stencil mask, and a method of producing a semiconductor device.
摘要:
A mask for fabrication of semiconductor devices in which the membrane layer keeps high strength and is free of stress and distortion even though it is made thin. The mask has a membrane-supporting layer at the peripheral part of the mask pattern or the mask pattern region in the membrane layer constituting the mask.
摘要:
A chromatic color pattern and a monochromatic color pattern are read by an image sensor. A masking coefficient in a color masking portion or a gamma conversion characteristic of a gamma correction portion are selected in accordance with the ratio V1/V0 of a read value V1 of the chromatic color pattern and a read value V0 of the monochromatic color pattern. An output of an image data is corrected by masking processing with the selected masking coefficient and the like.
摘要:
An image forming apparatus divides an original image into multiple areas depending on the magnification of copy and produces enlarged copies of the divided areas on sheets of copy paper sequentially, thereby obtaining a enlarged copy of the original larger than the paper size. For each divided area, copy paper of a smallest possible size necessary to copy the entirety of the divided area is selected. The original can be divided optimally based on the original size, copy paper size and magnification, or can be divided by excluding a specified region from the original.