公开(公告)号：US09177781B2

公开(公告)日：2015-11-03

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/02

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

公开(公告)号：US08404596B2

公开(公告)日：2013-03-26

申请号：US13103719

申请日：2011-05-09

申请人： Shigeru Tahara ,  Naotsugu Hoshi

发明人： Shigeru Tahara ,  Naotsugu Hoshi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01L21/67069

摘要： A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.

摘要翻译： 通过使用图案化的抗蚀剂膜作为掩模，使用等离子体灰化方法从处理室中的待处理物体蚀刻低k膜的一部分后，在处理室中去除图案化的抗蚀剂膜。 该方法包括将至少包含CO 2气体的反应产物除去气体供给到处理室中的第一步骤，通过施加用于等离子体产生的高频功率产生反应产物去除气体的等离子体，以及去除沉积在内部的反应产物 处理室壁; 以及将灰化气体供给到处理室中的第二步骤，通过施加用于等离子体产生的高频电力产生灰化气体的等离子体，以及除去抗蚀剂膜。

公开(公告)号：US20120270406A1

公开(公告)日：2012-10-25

申请号：US13446006

申请日：2012-04-13

申请人： Shigeru Tahara ,  Eiichi Nishimura

发明人： Shigeru Tahara ,  Eiichi Nishimura

IPC分类号： B08B7/00 ,  H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/32853

摘要： A plasma processing apparatus in which a cleaning method is performed includes a plasma generating chamber, having a silicon-containing member, for generating therein plasma by exciting a processing gas; a plasma processing chamber communicating with the plasma generating chamber via a partition member; and a high frequency antenna, having a planar shape, provided at an outside of a dielectric window of the plasma generating chamber. The cleaning method includes exciting a hydrogen-containing processing gas into plasma in the plasma generating chamber, introducing hydrogen radicals in the plasma into the plasma processing chamber through the partition member, performing a plasma process on a processing target substrate by allowing the hydrogen radicals to act on the processing target substrate, unloading the processing target substrate, and removing silicon-based deposits generated in the plasma generating chamber by introducing a tetrafluoride (tetrafluoromethane) gas into the plasma generating chamber.

摘要翻译： 其中执行清洁方法的等离子体处理装置包括：具有含硅构件的等离子体产生室，用于通过激发处理气体在其中产生等离子体; 等离子体处理室，其经由分隔构件与等离子体产生室连通; 以及设置在等离子体发生室的电介质窗口的外侧的具有平面形状的高频天线。 清洗方法包括在等离子体发生室中激发含氢处理气体进入等离子体，通过分隔构件将等离子体中的氢自由基引入等离子体处理室中，通过使氢自由基进入等离子体处理工艺 作用于处理对象基板，卸载处理对象基板，以及通过将四氟（四氟甲烷）气体引入到等离子体产生室中来除去在等离子体发生室中产生的硅基沉积物。

公开(公告)号：US20120160416A1

公开(公告)日：2012-06-28

申请号：US13415566

申请日：2012-03-08

申请人： Shigeru Tahara ,  Masaru Nishino

发明人： Shigeru Tahara ,  Masaru Nishino

IPC分类号： C23F1/08

CPC分类号： H01L21/30604 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31138

摘要： When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.

摘要翻译： 当通过使用包含含有卤素和碳的第一气体并且具有每分子碳数为两个或更少碳原子的第一气体的处理气体来蚀刻基板时，同时从气体供应源的中央和外围部分向基板供应处理气体 单元，分别面对基板的中心部分和周边部分，供应处理气体，使得中心部分的气体流量比在周边部分中更大。 当通过使用包含含有卤素和碳的第二气体并且每分子具有三个或更多个碳数的第二气体的处理气体进行蚀刻时，提供处理气体，使得周边部分的气体流量比在 中央部分

公开(公告)号：US20120132365A1

公开(公告)日：2012-05-31

申请号：US13329677

申请日：2011-12-19

申请人： Ryuichi Asako ,  Gousuke Shiraishi ,  Shigeru Tahara

发明人： Ryuichi Asako ,  Gousuke Shiraishi ,  Shigeru Tahara

IPC分类号： C23F1/08

CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： There is provided a semiconductor device manufacturing apparatus capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing apparatus includes: an etching processing mechanism for performing an etching process that etches a low dielectric insulating film formed on a substrate; a CO2 plasma processing mechanism for performing a CO2 plasma process that exposes the substrate to CO2 plasma after the etching process; a polarization reducing mechanism for performing a polarization reducing process that reduces polarization in the low dielectric insulating film after the CO2 plasma process; and a transfer mechanism for transferring the substrate.

摘要翻译： 提供一种半导体器件制造装置，其能够回收暴露于CO 2等离子体的低介电绝缘膜的损坏，以获得处于良好状态的低介电绝缘膜，从而提高半导体器件的性能和可靠性。 半导体器件制造装置包括：蚀刻处理机构，用于进行蚀刻形成在基板上的低介电绝缘膜的蚀刻工艺; CO 2等离子体处理机构，用于执行在蚀刻工艺之后将衬底暴露于CO 2等离子体的CO 2等离子体工艺; 用于进行降低CO 2等离子体处理后的低介电绝缘膜的偏振的偏振降低处理的偏振减小机构; 以及用于转印衬底的转印机构。

公开(公告)号：US20110168205A1

公开(公告)日：2011-07-14

申请号：US12985652

申请日：2011-01-06

申请人： Shigeru TAHARA ,  Fumiko YAMASHITA ,  Eiichi NISHIMURA ,  Tokuhisa OHIWA ,  Takaya MATSUSHITA ,  Hiroshi TOMITA

发明人： Shigeru TAHARA ,  Fumiko YAMASHITA ,  Eiichi NISHIMURA ,  Tokuhisa OHIWA ,  Takaya MATSUSHITA ,  Hiroshi TOMITA

IPC分类号： B08B7/00 ,  C23F1/08

CPC分类号： H01L21/67028 ,  H01L21/02057

摘要： A substrate cleaning method performing cleaning of a surface of a substrate after a pattern on the substrate is formed by plasma etching, includes: a by-product removal process removing a by-product by exposing the substrate to an HF gas atmosphere; and a residual fluorine removal process removing fluorine remaining on the substrate by turning cleaning gas containing hydrogen gas and chemical compound gas containing carbon and hydrogen as constituent elements into plasma to act on the substrate.

摘要翻译： 通过等离子体蚀刻形成在基板上的图案之后进行基板表面的清洗的基板清洗方法，包括：通过将基板暴露于HF气体气氛中来除去副产物的副产物去除处理; 以及通过将含有氢气的含氢气和含有碳和氢的化合物气体作为构成元素的清洗气体转移到等离子体中，从而除去残留在基板上的氟的残留除氟过程。

公开(公告)号：US07964511B2

公开(公告)日：2011-06-21

申请号：US11509591

申请日：2006-08-25

申请人： Shigeru Tahara ,  Naotsugu Hoshi

发明人： Shigeru Tahara ,  Naotsugu Hoshi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01L21/67069

摘要： A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.

摘要翻译： 通过使用图案化的抗蚀剂膜作为掩模，使用等离子体灰化方法从处理室中的待处理物体蚀刻低k膜的一部分后，在处理室中去除图案化的抗蚀剂膜。 该方法包括将至少包含CO 2气体的反应产物除去气体供给到处理室中的第一步骤，通过施加用于等离子体产生的高频功率产生反应产物去除气体的等离子体，以及去除沉积在内部的反应产物 处理室壁; 以及将灰化气体供给到处理室中的第二步骤，通过施加用于等离子体产生的高频电力产生灰化气体的等离子体，以及除去抗蚀剂膜。

公开(公告)号：US07882800B2

公开(公告)日：2011-02-08

申请号：US10498478

申请日：2002-12-12

申请人： Akira Koshiishi ,  Mitsuru Hashimoto ,  Hideaki Tanaka ,  Shigeru Tahara ,  Kunihiko Hinata ,  Jun Ooyabu

发明人： Akira Koshiishi ,  Mitsuru Hashimoto ,  Hideaki Tanaka ,  Shigeru Tahara ,  Kunihiko Hinata ,  Jun Ooyabu

IPC分类号： C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10S156/915

摘要： A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance δ1 is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.

摘要翻译： 环形机构，包括聚焦环和围绕放置在安装在处理室中的装载台（下电极）上的晶片W的分隔盖环），其中环形间隙δ1设置在分隔环之间以将等离子体扩散到径向 在聚焦环外部允许等离子体进入其中，由此可以消除晶片W和聚焦环之间的电位差，以防止在晶片W和聚焦环之间发生等离子体的电弧放电。

公开(公告)号：US20100116787A1

公开(公告)日：2010-05-13

申请号：US12690802

申请日：2010-01-20

申请人： Shigeru Tahara ,  Masaru Nishino

发明人： Shigeru Tahara ,  Masaru Nishino

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/30604 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31138

摘要： When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.

公开(公告)号：US07674393B2

公开(公告)日：2010-03-09

申请号：US11389041

申请日：2006-03-27

申请人： Shigeru Tahara ,  Masaru Nishino

发明人： Shigeru Tahara ,  Masaru Nishino

IPC分类号： C03C25/68 ,  G01L21/30 ,  H01L21/306

CPC分类号： H01L21/30604 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31138

摘要： When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.

摘要翻译： 当通过使用包含含有卤素和碳的第一气体并且具有每分子碳数为两个或更少碳原子的第一气体的处理气体来蚀刻基板时，同时从气体供应源的中央和外围部分向基板供应处理气体 单元，分别面对基板的中心部分和周边部分，供应处理气体，使得中心部分的气体流量比在周边部分中更大。 当通过使用包含含有卤素和碳的第二气体并且每分子具有三个或更多个碳数的第二气体的处理气体进行蚀刻时，提供处理气体，使得周边部分的气体流量比在 中央部分