公开(公告)号：US07318947B1

公开(公告)日：2008-01-15

申请号：US10931622

申请日：2004-08-31

Applicant: Chang-Man Park ,  Shin Funada ,  Amritpal S. Rana ,  Daniel E. Scott

Inventor： Chang-Man Park ,  Shin Funada ,  Amritpal S. Rana ,  Daniel E. Scott

IPC: B05D5/12

CPC classification number: G01R33/09 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/18 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/12 ,  Y10T29/49067

Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, fabricating a metallic spacer layer and oxidizing a portion of the spacer layer in an environment including at least oxygen and a gas inert with respect to the spacer layer to provide an oxide layer. The method and system also include creating a free layer. The oxide layer is between a remaining metallic portion of the spacer layer and the free layer. In one aspect, the system includes a chamber and a gas diffusion apparatus within the chamber. The gas diffusion apparatus includes a plurality of nozzles and defines a plane. The gas exits each of the plurality of nozzles in a cone having an apex angle. The nozzles are directed at a nozzle tilt angle of at least half of the apex angle from the plane and the spacer layer.

Abstract translation: 描述了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供被钉扎层，制造金属间隔层并在包括至少氧和相对于间隔层惰性的气体的环境中氧化间隔层的一部分以提供氧化物层。 该方法和系统还包括创建一个自由层。 氧化物层位于间隔层的剩余金属部分和自由层之间。 在一个方面，该系统包括室内的气体扩散装置。 气体扩散装置包括多个喷嘴并限定一个平面。 气体以具有顶角的锥体离开多个喷嘴中的每一个。 喷嘴以与顶板和间隔层的顶角的至少一半的喷嘴倾斜角度定向。

公开(公告)号：US07307818B1

公开(公告)日：2007-12-11

申请号：US10837381

申请日：2004-04-30

Applicant: Chang-Man Park ,  Shin Funada ,  Amritpal S. Rana ,  Lena Miloslavsky

Inventor： Chang-Man Park ,  Shin Funada ,  Amritpal S. Rana ,  Lena Miloslavsky

IPC: G11B5/39 ,  G11B5/127

CPC classification number: G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/32 ,  H01F41/325 ,  H01L43/08

Abstract: A method and system for providing a spin filter is disclosed. The method and system include providing a pinned layer, a free layer, and a conductive nonmagnetic spacer layer between the pinned layer and the free layer. The method and system also include providing a spin filter layer and a capping layer on the spin filter layer. The spin filter layer is adjacent to the free layer. The spin filter layer is on an opposite side of the free layer as the nonmagnetic spacer layer and includes at least Pt and/or Rh. The capping layer has a specular reflection layer therein. In one aspect, the specular reflection layer allows specular reflection of current carriers traveling from the spin filter layer to the specular reflection layer. In another aspect, the specular reflection layer includes at least Ta, Ti, Zr, Hf, Nb, Al, Mo, W, Si, Cr, V, Ni, Co, and Fe.

Abstract translation: 公开了一种用于提供自旋过滤器的方法和系统。 该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和导电非磁性间隔层。 该方法和系统还包括在自旋过滤层上提供自旋过滤层和覆盖层。 自旋过滤层与自由层相邻。 自旋过滤层位于自由层的与非磁性间隔层相反的一侧，并且至少包括Pt和/或Rh。 盖层在其中具有镜面反射层。 在一个方面，镜面反射层允许从自旋过滤层行进到镜面反射层的电流载流子的镜面反射。 另一方面，镜面反射层至少包括Ta，Ti，Zr，Hf，Nb，Al，Mo，W，Si，Cr，V，Ni，Co和Fe。

公开(公告)号：US5529854A

公开(公告)日：1996-06-25

申请号：US231866

申请日：1994-04-25

Applicant: Tatsuya Shimoda ,  Satoshi Shimokawato ,  Shin Funada ,  Mamoru Sugimoto ,  Akira Aoyama ,  Satoshi Nebashi

Inventor： Tatsuya Shimoda ,  Satoshi Shimokawato ,  Shin Funada ,  Mamoru Sugimoto ,  Akira Aoyama ,  Satoshi Nebashi

IPC: G11B11/105 ,  G11B5/66 ,  C23C14/00 ,  G11B11/00 ,  G11C13/06

CPC classification number: G11B11/10582 ,  G11B11/10586 ,  Y10S428/90

Abstract: A magnetic recording film and a magneto-optic recording system utilizing films. The film includes light and heavy rare earth elements and transition metal elements. The system can include dielectric layers and low magnetic coercivity layers in addition to the recording layer.

Abstract translation: 磁记录膜和利用膜的磁光记录系统。 该薄膜包括轻和重稀土元素和过渡金属元素。 该系统除了记录层之外还可以包括电介质层和低磁矫顽力层。

公开(公告)号：US20120156390A1

公开(公告)日：2012-06-21

申请号：US12975084

申请日：2010-12-21

Applicant: Satoru Araki ,  Shin Funada ,  Insik Jin ,  Quang Le ,  Simon H. Liao ,  Chang-Man Park

Inventor： Satoru Araki ,  Shin Funada ,  Insik Jin ,  Quang Le ,  Simon H. Liao ,  Chang-Man Park

IPC: B05D3/06 ,  B05D3/10 ,  B05D5/00

CPC classification number: G01R33/098 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B5/398 ,  H01F10/123 ,  H01F41/303 ,  H01L43/08 ,  H01L43/12

Abstract: A method for manufacturing a magnetic sensor that result in improved magnetic bias field to the sensor, improved shield to hard bias spacing and a flatter top shield profile. The method includes a multi-angled deposition of the hard bias structure. After forming the sensor stack a first hard bias layer is deposited at an angle of about 70 degrees relative to horizontal. This is a conformal deposition. Then, a second deposition is performed at an angle of about 90 degrees relative to horizontal. This is a notching deposition, that results in notches being formed adjacent to the sensor stack. Then, a hard bias capping layer is deposited at an angle of about 55 degrees relative to horizontal. This is a leveling deposition that further flattens the surface on which the top shield can be electroplated.

Abstract translation: 一种用于制造磁传感器的方法，其导致对传感器的改善的磁偏置场，改善了对硬偏置间隔的屏蔽和较平坦的顶部屏蔽轮廓。 该方法包括硬偏置结构的多角度沉积。 在形成传感器堆叠之后，第一硬偏压层以相对于水平面约70度的角度沉积。 这是一个保形沉积。 然后，以相对于水平方向大约90度的角度执行第二沉积。 这是一种凹陷沉积，导致在传感器堆叠附近形成凹口。 然后，相对于水平度以大约55度的角度沉积硬偏压盖层。 这是一种平整沉积物，其进一步平坦化可以电镀顶部屏蔽的表面。

公开(公告)号：US06418048B1

公开(公告)日：2002-07-09

申请号：US09969315

申请日：2001-10-02

Applicant: Kyusik Sin ,  Shin Funada ,  Hugh C. Hiner ,  Xizeng Shi

Inventor： Kyusik Sin ,  Shin Funada ,  Hugh C. Hiner ,  Xizeng Shi

IPC: G11C1115

CPC classification number: G11C11/15

Abstract: A method and system for providing a top pinned spin-dependent tunneling sensor is disclosed. The method and system include providing a free layer, a tunneling barrier, a synthetic pinned layer and an antiferromagnetic layer. The free layer is ferromagnetic. The tunneling barrier is an insulator. The tunneling barrier is disposed between the free layer and the synthetic pinned layer. The synthetic pinned layer is ferromagnetic and includes a ferromagnetic top layer. The synthetic pinned layer is between the tunneling barrier and the antiferromagnetic layer. The ferromagnetic top layer acts as a seed layer for the antiferromagnetic layer.

Abstract translation: 公开了一种用于提供顶部钉扎自旋相关隧道传感器的方法和系统。 该方法和系统包括提供自由层，隧道势垒，合成钉扎层和反铁磁层。 自由层是铁磁性的。 隧道屏障是绝缘体。 隧道势垒设置在自由层和合成钉扎层之间。 合成钉扎层是铁磁性的并且包括铁磁顶层。 合成钉扎层位于隧道势垒和反铁磁层之间。 铁磁顶层用作反铁磁层的种子层。

公开(公告)号：US5100741A

公开(公告)日：1992-03-31

申请号：US193020

申请日：1988-05-12

Applicant: Tatsuya Shimoda ,  Satoshi Shimokawato ,  Shin Funada ,  Mamoru Sugimoto ,  Akira Aoyama ,  Satoshi Nebashi

Inventor： Tatsuya Shimoda ,  Satoshi Shimokawato ,  Shin Funada ,  Mamoru Sugimoto ,  Akira Aoyama ,  Satoshi Nebashi

IPC: G11B11/105

CPC classification number: G11B11/10586 ,  Y10S428/90

Abstract: A magnetic thin film recording layer comprised primarily of a light rare earth element and a transition metal element is disclosed. Other elements are optionally included in the film. The film has an easy axis of magnetization perpendicular with respect to the surface of the film. Magneto-optic recording systems using such films are also disclosed.

Abstract translation: 公开了一种主要由轻稀土元素和过渡金属元素组成的磁性薄膜记录层。 其他元素可选地包括在膜中。 该膜具有相对于膜表面垂直的易磁化轴。 还公开了使用这种膜的磁光记录系统。

公开(公告)号：US20130001187A1

公开(公告)日：2013-01-03

申请号：US13172739

申请日：2011-06-29

Applicant: Quang Le ,  Shin Funada ,  Jui-Lung Li

Inventor： Quang Le ,  Shin Funada ,  Jui-Lung Li

IPC: G11B5/127 ,  C23F1/00 ,  B05D5/12

CPC classification number: G03F7/20 ,  B82Y10/00 ,  G11B5/3169 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A method for manufacturing a magnetic sensor using an electrical lapping guide deposited and patterned simultaneously with a hard bias structure of the sensor material. The method includes depositing a sensor material, and patterning and ion milling the sensor material to define a track width of the sensor. A magnetic, hard bias material is then deposited and a second patterning and ion milling process is performed to simultaneously define the back edge of an electrical lapping guide and a back edge of the sensor.

Abstract translation: 一种用传感器材料的硬偏置结构沉积和图案化的电研磨导向器制造磁传感器的方法。 该方法包括沉积传感器材料，以及图案化和离子铣削传感器材料以限定传感器的轨道宽度。 然后沉积磁性，硬偏置材料，并且执行第二图案化和离子铣削工艺以同时限定电研磨引导件的后边缘和传感器的后边缘。

公开(公告)号：US20110146061A1

公开(公告)日：2011-06-23

申请号：US12645323

申请日：2009-12-22

Applicant: Shin Funada ,  Quang Le ,  Thomas L. Leong ,  Jui-Lung Li ,  Chang-Man Park ,  Ning Shi ,  Hicham M. Sougrati

Inventor： Shin Funada ,  Quang Le ,  Thomas L. Leong ,  Jui-Lung Li ,  Chang-Man Park ,  Ning Shi ,  Hicham M. Sougrati

IPC: G11B5/127

CPC classification number: G11B5/3163 ,  G11B5/112 ,  G11B5/3912 ,  G11B5/398 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49067

Abstract: A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield (deposited there-over) to be very thin.

Abstract translation: 一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。 该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。 执行离子铣削来定义传感器。 然后沉积薄的绝缘层和磁性硬偏置层。 进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。 因为CMP停止层非常致密且硬，所以可以使其非常薄。 这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

公开(公告)号：US07684160B1

公开(公告)日：2010-03-23

申请号：US11348190

申请日：2006-02-06

Applicant: Dustin Erickson ,  Chang-man Park ,  Shin Funada ,  Lena Miloslavsky

Inventor： Dustin Erickson ,  Chang-man Park ,  Shin Funada ,  Lena Miloslavsky

IPC: G11B5/39

CPC classification number: G11B5/3929 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/32 ,  H01F41/325 ,  H01L43/08

Abstract: A method and system for providing a magnetoresistive structure is disclosed. The magnetoresistive structure includes a pinned layer, a nonmagnetic spacer layer, a free layer, a specular layer, a barrier layer, and a capping layer. The spacer layer resides between the pinned layer and the free layer. The free layer is electrically conductive and resides between the specular layer and the nonmagnetic spacer layer. The specular layer is adjacent to the free layer and includes at least one of titanium oxide, yttrium oxide, hafnium oxide, magnesium oxide, aluminum oxide, nickel oxide, iron oxide, zirconium oxide, niobium oxide, and tantalum oxide. The barrier layer resides between the specular layer and the capping layer. The barrier layer is nonmagnetic and includes a first material. The capping layer includes a second material different from the first material.

Abstract translation: 公开了一种用于提供磁阻结构的方法和系统。 磁阻结构包括被钉扎层，非磁性间隔层，自由层，镜面层，阻挡层和覆盖层。 间隔层位于被钉扎层和自由层之间。 自由层是导电的并且位于镜面层和非磁性间隔层之间。 镜面层与自由层相邻，并且包括氧化钛，氧化钇，氧化铪，氧化镁，氧化铝，氧化镍，氧化铁，氧化锆，氧化铌和氧化钽中的至少一种。 阻挡层位于镜面层和覆盖层之间。 阻挡层是非磁性的并且包括第一材料。 封盖层包括与第一材料不同的第二材料。

公开(公告)号：US06747301B1

公开(公告)日：2004-06-08

申请号：US10071798

申请日：2002-02-06

Applicant: Hugh Craig Hiner ,  Kyusik Sin ,  Shin Funada ,  Xizeng Shi ,  Hua-Ching Tong

Inventor： Hugh Craig Hiner ,  Kyusik Sin ,  Shin Funada ,  Xizeng Shi ,  Hua-Ching Tong

IPC: H01L2976

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/3213 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/226

Abstract: A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.

Abstract translation: 公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。 据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。 这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。 降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。